CYSTEKEC BTD6055M3 Npn epitaxial planar high current (high performance) transistor Datasheet

Spec. No. : C659M3
Issued Date : 2008.06.25
Revised Date :
Page No. : 1/6
CYStech Electronics Corp.
NPN Epitaxial Planar High Current (High Performance) Transistor
BTD6055M3
Features
• Low VCE(SAT)
• Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A
• Low operating collector voltage
• Excellent current gain characteristics at very low VCE
• Suitable for low dropout voltage application
• Pb-free package
Symbol
Outline
BTD6055M3
SOT-89
B:Base
C:Collector
E:Emitter
B
C
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj ; Tstg
Limits
15
10
7
6
9
0.6
1 (Note 1)
2 (Note 2)
-55 ~ +150
Unit
V
V
V
A
A
W
°C
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2. When mounted on ceramic with area measuring 40×40×1 mm
BTD6055M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C659M3
Issued Date : 2008.06.25
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C, unless otherwise specified)
Symbol
BVCEO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE
*hFE
*hFE
fT
Cob
Min.
10
450
400
250
100
-
Typ.
-
Max.
100
100
0.2
0.35
1.2
1.2
50
Unit
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=1mA, IB=0
VCB=12V, IE=0
VEB=7V, IC=0
IC=3A, IB=20mA
IC=5A, IB=20mA
IC=3A, IB=60mA
VCE=0.3V, IC=3A
VCE=0.3V, IC=500mA
VCE=0.3V, IC=1A
VCE=0.3V, IC=5A
VCE=6V, IC=500mA, f=20MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
BTD6055M3
BTD6055M3
Package
SOT-89
(Pb-free)
Shipping
Marking
1000 pcs / Tape & Reel
D6055
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C659M3
Issued Date : 2008.06.25
Revised Date :
Page No. : 3/6
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCE=1V
Saturation Voltage-(mV)
Current Gain---HFE
VCESAT
VCE=0.5V
VCE=0.3V
HFE
100
IC=50IB
10
IC=20IB
100
1
10
100
1000
Collector Current ---IC(mA)
10000
10
Saturation Voltage vs Collector Current
100
1000
Collector Current ---IC(mA)
10000
Power Derating Curve
10000
2.5
Power Dissipation---PD(W)
Saturation Voltage-(mV)
VBESAT@IC=50IB
1000
See Note 2 on page 1
2
See Note 1 on page 1
1.5
1
0.5
0
100
10
100
1000
Collector Current--- IC(mA)
BTD6055M3
10000
0
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C659M3
Issued Date : 2008.06.25
Revised Date :
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
BTD6055M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C659M3
Issued Date : 2008.06.25
Revised Date :
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTD6055M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C659M3
Issued Date : 2008.06.25
Revised Date :
Page No. : 6/6
SOT-89 Dimension
Marking:
A
2
1
Product
Name
3
Month code:
1~9, A,B,C
Year code :
6→2006,
7→2007,…
H
C
D
B
E
Style: Pin 1. Base 2. Collector 3. Emitter
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
*: Typical
Inches
Min.
Max.
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
2.40
2.60
0.36
0.51
DIM
F
G
H
I
Inches
Min.
Max.
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Millimeters
Min.
Max.
1.48
1.527
2.96
3.04
1.40
1.60
0.35
0.41
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: KFC ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD6055M3
CYStek Product Specification
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