MOTOROLA MCR8 Scrs 8 amperes rms 400 thru 800 volt Datasheet

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by MCR8/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola preferred devices
SCRs
8 AMPERES RMS
400 thru 800
VOLTS
Designed primarily for half–wave ac control applications, such as motor
controls, heating controls, and power supplies; or wherever half–wave, silicon
gate–controlled devices are needed.
• Blocking Voltage to 800 Volts
A
• On-State Current Rating of 8 Amperes RMS
• High Surge Current Capability — 80 Amperes
• Industry Standard TO–220AB Package for Ease of Design
• Glass Passivated Junctions for Reliability and Uniformity
K
A
G
CASE 221A–06
(TO-220AB)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Peak Repetitive Off-State Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = –40 to 125°C)
Symbol
Value
VDRM
VRRM
MCR8D
MCR8M
MCR8N
On-State RMS Current
(All Conduction Angles)
Peak Non-repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C)
Average Gate Power (t = 8.3 ms, TC = 80°C)
Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C)
Operating Junction Temperature Range
Storage Temperature Range
Unit
Volts
400
600
800
IT(RMS)
8
A
ITSM
80
A
I2t
26.5
A2sec
PGM
5.0
Watts
PG(AV)
0.5
Watts
IGM
2.0
A
TJ
– 40 to +125
°C
Tstg
– 40 to +150
°C
RθJC
RθJA
2.0
62.5
°C/W
TL
260
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
NOTE: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that
the voltage ratings of the devices are exceeded.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data
 Motorola, Inc. 1995
1
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
IDRM
IRRM
—
—
—
—
0.01
2.0
mA
Peak On-State Voltage* (ITM = 16 A)
VTM
—
—
1.8
Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)
IGT
2.0
7.0
15
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)
VGT
0.5
0.65
1.0
Volts
IH
4.0
22
30
mA
(dv/dt)
50
200
—
V/µs
Characteristic
OFF CHARACTERISTICS
Peak Forward Blocking Current
Peak Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
Hold Current (Anode Voltage =12 V)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
PACKAGE DIMENSIONS
–T–
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
C
F
T
S
4
A
Q
1 2 3
U
H
K
Z
L
R
V
STYLE 3:
PIN 1.
2.
3.
4.
J
G
D
CASE 221A–06
(TO-220AB)
N
CATHODE
ANODE
GATE
ANODE
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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2
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Motorola Thyristor Device Data
*MCR8/D*
MCR8/D
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