Spec. No. : C400J3 Issued Date : 2012.02.07 Revised Date : 2013.12.26 Page No. : 1/8 CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET MTP5103J3 Features BVDSS -30V ID -23A RDSON@VGS=-10V, ID=-10A 35mΩ(typ.) RDSON@VGS=-4.5V, ID=-5A 57mΩ(typ.) • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package Equivalent Circuit Outline MTP5103J3 TO-252(DPAK) G G：Gate D：Drain S：Source D S Ordering Information Device MTP5103J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTP5103J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400J3 Issued Date : 2012.02.07 Revised Date : 2013.12.26 Page No. : 2/8 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Symbol Limits VDS VGS ID ID IDM -30 ±20 -23 -15 -80 25 10 -55~+150 Pd Tj, Tstg Unit V A W °C Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Rth,j-a Value 5 50 (Note) 110 Note : When mounted on the minimum pad size recommended (PCB mount). Unit °C/W °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS *1 IDSS RDS(ON) *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss MTP5103J3 Min. Typ. Max. Unit Test Conditions -30 -1 - -1.5 7 35 57 -2.5 ±100 -1 -10 50 70 V V S nA VGS=0V, ID=-250μA VDS =VGS, ID=-250μA VDS =-10V, ID=-10A VGS=±20, VDS=0V VDS =-30V, VGS =0V VDS =-30V, VGS =0V, Tj=125°C VGS =-10V, ID=-10A VGS =-4.5V, ID=-5A - 10 3 5 5 4 15 10 748 72 62 - μA mΩ nC ID=-10A, VDS=-24V, VGS=-4.5V ns VDS=-15V, ID=-10A, VGS=-10V, RG=3.3Ω pF VGS=0V, VDS=-25V, f=1MHz CYStek Product Specification CYStech Electronics Corp. Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - -0.9 20 10 -5 -20 -1.2 - Spec. No. : C400J3 Issued Date : 2012.02.07 Revised Date : 2013.12.26 Page No. : 3/8 A V ns nC IF=-5A, VGS=0V IF=-10A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTP5103J3 CYStek Product Specification Spec. No. : C400J3 Issued Date : 2012.02.07 Revised Date : 2013.12.26 Page No. : 4/8 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 90 10V -ID, Drain Current(A) 80 9V 8V 70 7V 60 6V 50 40 5V 30 -VGS=2V 20 4V 10 40 -BVDSS, Drain-Source Breakdown Voltage (V) 100 3V 35 30 25 ID=-250μA, VGS=0V 20 -100 0 0 2 4 6 8 -VDS, Drain-Source Voltage(V) 10 Static Drain-Source On-State resistance vs Drain Current 200 1.2 -VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 0 50 100 150 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 1000 VGS=-3.5V VGS=-4V VGS=-2.5V VGS=-3V 100 VGS=-10V 10 0.001 VGS=-5V VGS=0V Tj=25°C 1 0.8 Tj=150°C 0.6 0.4 VGS=-4.5V 0.2 0.01 0.1 1 -ID, Drain Current(A) 10 0 100 5 10 15 -IDR, Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 400 80 R DS(ON) , Static Drain-Source On-State Resistance(mΩ) R DS(ON) , Static Drain-Source OnState Resistance(mΩ) -50 360 320 280 240 ID=-5A 200 ID=-10A 160 120 80 40 VGS=-10V, ID=-10A 70 60 50 40 VGS=-4.5V, ID=-5A 30 20 0 0 MTP5103J3 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400J3 Issued Date : 2012.02.07 Revised Date : 2013.12.26 Page No. : 5/8 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 2.4 -VGS(th) , Threshold Voltage(V) 1000 Capacitance---(pF) Ciss C oss 100 Crss ID=-250μA 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -60 100 -20 Maximum Safe Operating Area 100 140 10 1ms RDS(ON) Limit 10 -VGS, Gate-Source Voltage(V) 10μs 100μs -ID, Drain Current(A) 60 Gate Charge Characteristics 100 10ms 100ms DC 1 TC=25°C, Tj=150°, VGS=10V Single Pulse VDS=-24V ID=-10A 8 6 4 2 0 0.1 0.1 1 10 -VDS, Drain-Source Voltage(V) 0 100 Forward Transfer Admittance vs Drain Current -ID, Maximum Drain Current(A) 0.1 MTP5103J3 10 15 20 Qg, Total Gate Charge(nC) 25 30 30 1 0.01 0.001 5 Maximum Drain Current vs Case Temperature 10 GFS, Forward Transfer Admittance(S) 20 Tj, Junction Temperature(°C) VDS=-10V Pulsed Ta=25°C 25 20 15 10 5 0 0.01 0.1 1 -ID, Drain Current(A) 10 25 50 75 100 125 TC, Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400J3 Issued Date : 2012.02.07 Revised Date : 2013.12.26 Page No. : 6/8 Typical Characteristics(Cont.) Power Derating Curve Typical Transfer Characteristics 30 90 VDS=-10V PD, Power Dissipation(W) 80 -ID, Drain Current(A) 70 60 50 40 30 20 25 20 15 10 5 10 0 0 0 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 0 20 40 60 80 100 120 TC, Case Temperature(℃) 140 160 Transient Thermal Response Curves 10 ZθJC(t), Thermal Response D=0.5 1 0.2 1.ZθJC(t)=5 °C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 0.1 0.05 0.02 0.01 0.1 Single Pulse 0.01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTP5103J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400J3 Issued Date : 2012.02.07 Revised Date : 2013.12.26 Page No. : 7/8 Reel Dimension Carrier Tape Dimension MTP5103J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400J3 Issued Date : 2012.02.07 Revised Date : 2013.12.26 Page No. : 8/8 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTP5103J3 CYStek Product Specification Spec. No. : C400J3 Issued Date : 2012.02.07 Revised Date : 2013.12.26 Page No. : 9/8 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name 5103 Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP5103J3 CYStek Product Specification