BWTECH MS23N36 P-channel 30-v (d-s) mosfet Datasheet

MS23N36
P-Channel 30-V (D-S) MOSFET
Description
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low rDS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
Features
• Low rDS(on) provides higher efficiency and extends
battery life
• Miniature SOT-23 Surface Mount Package
• Saves Board Space
• RoHS compliant package
Packing & Order Information
3,000/Reel
Graphic symbol
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±12
V
Continuous Drain Current (TA= 25°C)
5.2
A
Continuous Drain Currenta (TA =70°C)
4.1
A
30
A
a
ID
IDM
IS
PD
TJ/TSTG
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
1.6
A
a
1.3
W
a
0.8
W
-55 to +150
°C
Power Dissipation (TA =25°C)
Power Dissipation (TA =70°C)
Operating Junction and Storage Temperature
• Drain current limited by maximum junction temperature
Publication Order Number: [MS23N36]
© Bruckewell Technology Corporation Rev. A -2014
MS23N36
P-Channel 30-V (D-S) MOSFET
Thermal Resistance Ratings
Symbol
Parameter
Maximum
a
100
a
166
Maximum Junction-to-Ambient (t <= 5 sec)
RθJA
Maximum Junction-to-Ambient (Steady-State)
Units
°C/W
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Static
Symbol
Parameter
Test Conditions
Min
VGS(th)
Gate-Threshold Voltage
VDS = VGS, ID = -250μA
0.6
IGSS
Gate-Body Leakage
VDS = 0 V , VGS = 8 V
±100
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V , VGS = 0 V
1
VDS = 24 V , VGS = 0 V , TJ= 55°C
25
ID(on)
On-State Drain Current
IDS(on)
Drain-Source On-Resistance
gfs
Forward Tranconductance
VSD
Diode Forward Voltage
Dynamic
Symbol
Qg
A
VDS = 5 V, VGS = 4.5 V
A
A
Typ.
Max.
Units
V
20
nA
uA
A
VGS = 4.5 V, ID = 5.2 A
32
VGS = 2.5 V, ID = 3.7 A
64
mΩ
VDS = 15 V, ID = 5.2 A
40
S
IS = 2.3 V, VGS= 0 V
0.7
V
b
Parameter
Test Conditions
Min
Total Gate Charge
VDS = 15 V , ID = 4.5 A,
Typ.
Max.
Units
6.0
nC
1.0
nC
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
1.5
nC
td(on)
Turn-On Delay Time
7.8
ns
tr
Rise Time
VDD = 25 V , RL = 25 Ω,
5.2
ns
td(off)
Turn-Off Delay Time
VGEN = 10 V , ID = 1 A
31.2
ns
tf
Fall Time
8
ns
VGS = 5.2 V
Notes:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Publication Order Number: [MS23N36]
© Bruckewell Technology Corporation Rev. A -2014
MS23N36
P-Channel 30-V (D-S) MOSFET
■Characteristic
Curves
FIG.1-OUTPUT CHARACTERISTICS
FIG.2-TRANSFER CHARCTERISTICS
FIG.3-ON-RESISTANCE VS DARIN CURRENT
FIG.4-CAPACITANCE
FIG.5-GATE CHARGE
FIG.6-ON-RESISTANCE VS. JUNCTION TEMPERATURE
Publication Order Number: [MS23N36]
© Bruckewell Technology Corporation Rev. A -2014
MS23N36
P-Channel 30-V (D-S) MOSFET
■Characteristic Curves
FIG.7-SOURCE-DRAIN DIODE
FORWARD VOLTAGE
FIG.8-ON-RESISTANCE VS. GATE-TO
SOURCE VOLTAGE
FIG.9-THRESHOLD VOLTAGE
FIG.10-SINGLE PULSE POWER
FIG.11-NORMALIZED THERSIENT IMPEDANCE, JUNCTION-TO-AMBIENT
Publication Order Number: [MS23N36]
© Bruckewell Technology Corporation Rev. A -2014
MS23N36
P-Channel 30-V (D-S) MOSFET
Disclaimer
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may vary over time.
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purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS23N36]
© Bruckewell Technology Corporation Rev. A -2014
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