Vishay MBR1100TR-M3 Schottky rectifier, 1 a Datasheet

VS-MBR1100, VS-MBR1100-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 1 A
FEATURES
• Low profile, axial leaded outline
• Very low forward voltage drop
Cathode
Anode
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
DO-204AL
• Guard ring for enhanced ruggedness and
long term reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
• Designed and qualified for commercial level
Package
DO-204AL (DO-41)
IF(AV)
1A
VR
100 V
VF at IF
0.68 V
IRM max.
1.0 mA at 125 °C
TJ max.
150 °C
Diode variation
Single die
EAS
1.0 mJ
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-MBR1100... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
IF(AV)
Rectangular waveform
VRRM
VALUES
UNITS
1.0
A
100
V
IFSM
tp = 5 μs sine
200
A
VF
1 Apk, TJ = 125 °C
0.68
V
TJ
Range
- 40 to 150
°C
VOLTAGE RATINGS
SYMBOL
PARAMETER
VR
Maximum DC reverse voltage
VRWM
Maximum working peak reverse voltage
VS-MBR1100
VS-MBR1100-M3
UNITS
100
100
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
See fig. 4
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 6
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 0.5 A, L = 8 mH
1.0
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by, TJ maximum VA = 1.5 x VR typical
0.5
A
Repetitive avalanche current
Revision: 21-Sep-11
50 % duty cycle at TC = 85 °C, rectangular waveform
10
5 µs sine or 3 µs rect. pulse
200
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
A
50
Document Number: 93438
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR1100, VS-MBR1100-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
1A
Maximum forward voltage drop
See fig. 1
VFM (1)
TJ = 25 °C
2A
1A
TJ = 125 °C
2A
Maximum reverse leakage current
See fig. 2
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
IRM (1)
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
CT
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
LS
Measured lead to lead 5 mm from package body
dV/dt
Rated VR
VALUES
UNITS
0.85
0.96
V
0.68
0.78
0.5
mA
1.0
35
pF
8.0
nH
10 000
V/µs
VALUES
UNITS
- 40 to 150
°C
80
°C/W
0.33
g
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
RthJL (2)
TEST CONDITIONS
DC operation
See fig. 4
Approximate weight
Marking device
0.012
Case style DO-204AL (DO-41) (JEDEC)
oz.
MBR1100
Notes
(1)
(2)
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
Revision: 21-Sep-11
Document Number: 93438
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR1100, VS-MBR1100-M3
www.vishay.com
Vishay Semiconductors
Allowable Case Temperature (°C)
IF - Instantaneous Forward Current (A)
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
160
140
120
80
60
20
see note (1)
0
0
0.4
0.8
1.2
0
1.6
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
93438_01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
IF(AV) - Average Forward Current (A)
93438_04
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
1
10
1
TJ = 150 °C
Average Power Loss (W)
IR - Reverse Current (mA)
Square wave (D = 0.50)
80 % Rated VR applied
40
0.1
0.1
TJ = 125 °C
0.01
0.001
TJ = 25 °C
0.0001
0.8
0.6
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
DC
RMS Limit
0.4
0.2
0
0
0
20
40
60
80
100
VR - Reverse Voltage (V)
93438_02
0
10
40
60
80
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
100
IFSM - Non-Repetitive Surge Current (A)
CT - Junction Capacitance (pF)
TJ = 25 °C
20
1
1.5
Fig. 5 - Forward Power Loss Characteristics
100
0
0.5
Average Forward Current - IF(AV) (A)
93438_05
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
93438_03
DC
100
1000
100
At Any Rated Load Condition
And With rated VRRM Applied
Following Surge
10
10
93438_06
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
Revision: 21-Sep-11
Document Number: 93438
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR1100, VS-MBR1100-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
1
2
1
100
TR
-M3
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Schottky MBR series
3
-
Current rating: 1 = 1 A
4
-
Voltage rating: 100 = 100 V
5
-
TR = Tape and reel package
None = Bulk package
6
-
Environmental digit
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
VS-MBR1100
1000
1000
PACKAGING DESCRIPTION
Bulk
VS-MBR1100TR
5000
5000
Tape and reel
VS-MBR1100-M3
1000
1000
Bulk
VS-MBR1100TR-M3
5000
5000
Tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95241
Part marking information
www.vishay.com/doc?95304
Packaging information
www.vishay.com/doc?95338
Revision: 21-Sep-11
Document Number: 93438
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Axial DO-204AL (DO-41)
DIMENSIONS in millimeters (inches)
2.70 (0.106)
DIA.
2.29 (0.090)
Cathode band
27.0 (1.06) MIN.
(2 places)
5.21 (0.205)
MAX.
27.0 (1.06) MIN.
(2 places)
1.27 (0.050) MAX.
Flash (2 places)
5.21 (0.205)
MAX.
0.86 (0.034)
DIA.
0.72 (0.028)
(2 places)
0.86 (0.034)
DIA.
0.72 (0.028)
(2 places)
2.70 (0.106)
DIA.
2.29 (0.090)
Revision: 29-Aug-11
Document Number: 95241
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
1
Document Number: 91000
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