FDD86381_F085 N-Channel PowerTrench® MOSFET 80 V, 25 A, 21 mΩ Features Typical RDS(on) = 16.2 mΩ at VGS = 10V, ID = 25 A Typical Qg(tot) = 14 nC at VGS = 10V, ID = 25 A UIS Capability D RoHS Compliant Qualified to AEC Q101 Applications D G Automotive Engine Control PowerTrain Management G S Solenoid and Motor Drivers D-PAK TO-252 (TO-252) Electronic Steering Integrated Starter/Alternator S For current package drawing, please refer to the Fairchild web‐ site at http://www.fairchildsemi.com/package‐drawings/TO/ TO252A03.pdf. Distributed Power Architectures and VRM Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Drain-to-Source Voltage VDSS VGS ID EAS PD Parameter Ratings 80 Units V ±20 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 25 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 2) A 14 mJ Power Dissipation 48.4 W Derate Above 25oC 0.323 W/oC TJ, TSTG Operating and Storage Temperature o -55 to + 175 RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient (Note 3) C 3.1 o C/W 52 o C/W Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 70μH, IAS = 20A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDD86381 Device FDD86381_F085 ©2016 Fairchild Semiconductor Corporation FDD86381_F085 Rev. 1.0 Package D-PAK(TO-252) 1 Reel Size 13” Tape Width 16mm Quantity 2500units www.fairchildsemi.com FDD86381_F085 N-Channel PowerTrench® MOSFET March 2016 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250μA, VGS = 0V VDS = 80V, VGS = 0V 80 - - V - - 1 μA - - 1 mA - - ±100 nA 2.0 2.7 4.0 V - 16.2 21 mΩ - 34.7 45 mΩ TJ = 25oC TJ = 175oC (Note 4) VGS = ±20V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 25A, VGS= 10V TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VGS = 0.5V, f = 1MHz Qg(ToT) Total Gate Charge VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate-to-Source Gate Charge Qgd Gate-to-Drain “Miller“ Charge - VDS = 40V, VGS = 0V, f = 1MHz VDD = 40V ID = 25A - 866 - pF - 176 - pF - 7 - pF - 2.3 - Ω - 14 21 nC - 1.6 - nC - 5 - nC 4 - nC ns Switching Characteristics ton Turn-On Time - - 25 td(on) Turn-On Delay - 8 - ns tr Rise Time - 9 - ns td(off) Turn-Off Delay - 14 - ns tf Fall Time - 5 - ns toff Turn-Off Time - - 28 ns V VDD = 40V, ID = 25A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD = 25A, VGS = 0V - - 1.25 ISD = 12.5A, VGS = 0V - - 1.2 V VDD = 64V, IF = 25A, dISD/dt = 100A/μs - 32 48 ns - 19 29 nC Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. ©2016 Fairchild Semiconductor Corporation FDD86381_F085 Rev. 1.0 2 www.fairchildsemi.com FDD86381_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. 0.8 0.6 0.4 0.2 0.0 VGS = 10V CURRENT LIMITED BY SILICON CURRENT LIMITED BY PACKAGE 35 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 40 1.2 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 TC = 25oC VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability ©2016 Fairchild Semiconductor Corporation FDD86381_F085 Rev. 1.0 3 www.fairchildsemi.com FDD86381_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 100 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 2000 1000 100 10 100us OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1ms 10ms 100ms 0.01 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 500 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 40 0 TJ = 25oC TJ = -55oC 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 100 VGS = 0 V TJ = 25 oC 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Figure 8. Forward Diode Characteristics 250μs PULSE WIDTH Tj=175oC VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom ID, DRAIN CURRENT (A) 60 1 TJ = 175 oC 100 80 0.1 VSD, BODY DIODE FORWARD VOLTAGE (V) 100 250μs PULSE WIDTH Tj=25oC 0.01 10 0.1 0.0 10 Figure 7. Transfer Characteristics ID, DRAIN CURRENT (A) 1 0.001 100 60 20 STARTING TJ = 150oC Figure 6. Unclamped Inductive Switching Capability VDD = 5V TJ = 175oC STARTING TJ = 25oC NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 PULSE DURATION = 250μs DUTY CYCLE = 0.5% MAX 80 10 tAV, TIME IN AVALANCHE (ms) Figure 5. Forward Bias Safe Operating Area 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 40 20 0 80 60 VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 40 20 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 Figure 9. Saturation Characteristics ©2016 Fairchild Semiconductor Corporation FDD86381_F085 Rev. 1.0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDD86381_F085 N-Channel PowerTrench® MOSFET Typical Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 140 PULSE DURATION = 250μs DUTY CYCLE = 0.5% MAX 120 ID = 25A 100 80 60 TJ = 175oC 40 20 0 4 TJ = 25oC 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 1.5 1.0 ID = 25A VGS = 10V 0.5 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 12. Normalized RDSON vs. Junction Temperature 1.10 VGS = VDS ID = 250μA 1.1 ID = 5mA 1.05 0.9 1.00 0.7 0.95 0.5 0.3 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature VGS, GATE TO SOURCE VOLTAGE(V) 1000 Ciss 100 Coss 10 f = 1MHz VGS = 0V 1 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs. Drain to Source Voltage ©2016 Fairchild Semiconductor Corporation FDD86381_F085 Rev. 1.0 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 10000 CAPACITANCE (pF) PULSE DURATION = 250μs DUTY CYCLE = 0.5% MAX 2.0 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.3 2.5 10 ID = 25A VDD = 40V 8 VDD = 32V VDD = 48V 6 4 2 0 0 3 6 9 12 Qg, GATE CHARGE(nC) 15 Figure 16. Gate Charge vs. Gate to Source Voltage 5 www.fairchildsemi.com FDD86381_F085 N-Channel PowerTrench® MOSFET Typical Characteristics AccuPower™ AttitudeEngine™ Awinda® AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® ®* ® tm Power Supply WebDesigner™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ TinyBoost® ® TinyBuck TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Xsens™ 仙童 ® *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. AUTHORIZED USE Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotive or other transportation, (2) military/aerospace, (3) any safety critical application – including life critical medical equipment – where the failure of the Fairchild product reasonably would be expected to result in personal injury, death or property damage. Customer’s use of this product is subject to agreement of this Authorized Use policy. In the event of an unauthorized use of Fairchild’s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be subject to Fairchild’s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Terms of Use Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handling and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I77 ©2016 Fairchild Semiconductor Corporation FDD86381_F085 Rev. 1.0 6 www.fairchildsemi.com FDD86381_F085 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.