Samsung K7N161845A-QFCI25/20/16 512kx36 & 1mx18 pipelined ntram Datasheet

K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
Document Title
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM
Revision History
Rev. No.
History
Draft Date
Initial document.
Add JTAG Scan Order
Add x32 org and industrial temperature .
Add 165FBGA package
Speed bin merge.
From K7N1636(32/18)09A to K7N1636(32/18)01A.
2. AC parameter change.
tOH(min)/tLZC(min) from 0.8 to 1.5 at -25
tOH(min)/tLZC(min) from 1.0 to 1.5 at -22
tOH(min)/tLZC(min) from 1.0 to 1.5 at -20
March. 21. 2001 Preliminary
May.
10. 2001 Preliminary
Aug.
30. 2001 Preliminary
0.3
1.
1.
1.
2.
1.
1.0
1. Final spec release.
May. 10 .2002
Final
2.0
1. Release Icc on page 14.
May. 22. 2002
Final
0.0
0.1
0.2
part #
From
To
-25
440
470
-22
400
430
-20
370
400
-16
340
350
-13
280
290
Dec.
Remark
26. 2001 Preliminary
2.1
1. Delete 119BGA package.
2. Correct the Ball Size of 165 FBGA.
April. 04. 2003
Final
3.0
1. Delete x32 Org.
2. Delete the 225MHz speed bin
Nov. 17, 2003
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
16Mb NtRAM(Flow Through / Pipelined) Ordering Information
Org.
Mode
VDD
Speed
FT ; Access Time(ns)
Pipelined ; Cycle Time(MHz)
FlowThrough
3.3
6.5/7.5 ns
K7N161801A-Q(F)C(I)25/20/16/13
Pipelined
3.3
250/200/167/133MHz
K7N161845A-Q(F)C(I)25/20/16/13
Pipelined
2.5
250/200/167/133MHz
Part Number
K7M161825A-QC(I)65/75
1Mx18
K7M163625A-QC(I)65/75
FlowThrough
3.3
6.5/7.5 ns
512Kx36 K7N163601A-Q(F)C(I)25/20/16/13
Pipelined
3.3
250/200/167/133MHz
K7N163645A-Q(F)C(I)25/20/16/13
Pipelined
2.5
250/200/167/133MHz
-2-
PKG
Q : 100TQFP
F : 165FBGA
Temp
C
; Commercial
Temp.Range
I
; Industrial
Temp.Range
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
FEATURES
GENERAL DESCRIPTION
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O
or 2.5V+0.4V/-0.125V for 2.5V I/O.
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no da tacontention .
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• 100-TQFP-1420A
• 165FBGA(11x15 ball aray) with body size of 13mmx15mm.
• Operating in commeical and industrial temperature range.
The K7N163601A and K7N161801A are 18,874,368-bits Synchronous Static SRAMs.
The N tRAM TM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output
enable and linear burst order are synchronized to input clock.
Burst order control must be tied "High or Low".
Asynchronous inputs include the sleep mode enable(ZZ).
Output Enable controls the outputs at any given time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-chip
write pulse generation
and provides increased timing flexibility for incoming signals.
For read cycles, pipelined SRAM output data is temporarily
stored by an edge triggered output register and then released
to the output buffers at the next rising edge of clock.
The K7N163601A and K7N161801A are implemented with
SAMSUNG′s high performance CMOS technology and is available in 100pin TQFP and 165FBGA packages. Multiple power
and ground pins minimize ground bounce.
FAST ACCESS TIMES
PARAMETER
Cycle Time
Symbol
-25
-20
-16
-13
Unit
tCYC
4.0
5.0
6.0
7.5
ns
Clock Access Time
tCD
2.6
3.2
3.5
4.2
ns
Output Enable Access Time
tOE
2.6
3.2
3.5
4.2
ns
LOGIC BLOCK DIAGRAM
LBO
A [0:18]or
A [0:19]
CKE
ADDRESS
REGISTER A 2 ~A 18 or A 2~A 19
CONTROL
LOGIC
CLK
BURST
ADDRESS
COUNTER
A 0~A 1
ADV
WE
B Wx
(x=a,b,c,d or a,b)
CONTROL
REGISTER
CS 1
CS 2
CS 2
WRITE
ADDRESS
REGISTER
K
A′ 0~A ′ 1
WRITE
ADDRESS
REGISTER
512Kx36, 1Mx18
MEMORY
ARRAY
K
DATA-IN
REGISTER
K
DATA-IN
REGISTER
CONTROL
LOGIC
K
OUTPUT
REGISTER
BUFFER
OE
ZZ
36 or 18
DQa0 ~ DQd7 or D Q a0 ~ DQb 8
DQPa ~ DQPd
NtRAM TM and No Turnaround Random Access Memory are trademarks of Samsung.
-3-
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
A6
A7
CS 1
CS 2
BWd
BWc
BWb
BWa
CS 2
V DD
V SS
CLK
WE
CK E
OE
ADV
A 18
A 17
A8
A9
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
100 Pin TQFP
(20mm x 14mm)
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
A0
N.C.
N.C.
V SS
V DD
N.C.
N.C.
A 10
A 11
A 12
A 13
A 14
A 15
A 16
34
A3
A1
33
A4
35
32
A2
31
K7N163601A(512Kx36)
A5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
LBO
NC/DQPc
DQc0
DQc1
V DDQ
V SSQ
DQc2
DQc3
DQc4
DQc5
V SSQ
V DDQ
DQc6
DQc7
V DD
V DD
V DD
V SS
DQd 0
DQd 1
V DDQ
V SSQ
DQd 2
DQd 3
DQd 4
DQd 5
V SSQ
V DDQ
DQd 6
DQd 7
NC/ DQPd
100
PIN CONFIGURATION(TOP VIEW)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQPb/NC
DQb 7
DQb 6
V DDQ
V SSQ
DQb 5
DQb 4
DQb 3
DQb 2
V SSQ
V DDQ
DQb 1
DQb 0
V SS
V DD
V DD
ZZ
DQa 7
DQa 6
V DDQ
V SSQ
DQa 5
DQa 4
DQa 3
DQa 2
V SSQ
V DDQ
DQa 1
DQa 0
DQPa/NC
PIN NAME
SYMBOL
PIN NAME
A 0 - A 18
Address Inputs
ADV
WE
CLK
CKE
CS 1
CS 2
CS 2
B Wx(x=a,b,c,d)
OE
ZZ
LBO
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
TQFP PIN NO.
SYMBOL
32,33,34,35,36,37,44
45,46,47,48,49,50,81
82,83,84,99,100
85
88
89
87
98
97
92
93,94,95,96
86
64
31
PIN NAME
TQFP PIN NO.
V DD
V SS
Power Supply(+3.3V) 14,15,16,41,65,66,91
Ground
17,40,67,90
N.C.
No Connect
38,39,42,43
DQa 0 ~a7
DQb 0 ~b7
DQc 0~c 7
DQd 0 ~d7
DQPa~P d
or NC
Data
Data
Data
Data
Data
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
V DDQ
Output Power Supply 4,11,20,27,54,61,70,77
(3.3V or 2.5V)
Output Ground
5,10,21,26,55,60,71,76
V SSQ
Inputs/Outputs
Inputs/Outputs
Inputs/Outputs
Inputs/Outputs
Inputs/Outputs
Note : 1. A 0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-4-
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
A7
CS 1
CS 2
N.C.
N.C.
BWb
BWa
CS 2
V DD
V SS
CLK
WE
CK E
OE
ADV
A 19
A 18
A8
A9
98
97
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
96
A6
99
100 Pin TQFP
(20mm x 14mm)
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
A4
A3
A2
A1
A0
N.C.
N.C.
V SS
V DD
N.C.
N.C.
A 11
A 12
A 13
A 14
A 15
A 16
A 17
K7N161801A(1Mx18)
A5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
LBO
N.C.
N.C.
N.C.
V DDQ
V SSQ
N.C.
N.C.
DQb 8
DQb 7
V SSQ
V DDQ
DQb 6
DQb 5
V DD
V DD
V DD
V SS
DQb 4
DQb 3
V DDQ
V SSQ
DQb 2
DQb 1
DQb 0
N.C.
V SSQ
V DDQ
N.C.
N.C.
N.C.
100
PIN CONFIGURATION(TOP VIEW)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A 10
N.C.
N.C.
V DDQ
V SSQ
N.C.
DQa 0
DQa 1
DQa 2
V SSQ
V DDQ
DQa 3
DQa 4
V SS
V DD
V DD
ZZ
DQa 5
DQa 6
V DDQ
V SSQ
DQa 7
DQa 8
N.C.
N.C.
V SSQ
V DDQ
N.C.
N.C.
N.C.
PIN NAME
SYMBOL
PIN NAME
A 0 - A 19
Address Inputs
ADV
WE
CLK
CKE
CS 1
CS 2
CS 2
BW x(x=a,b)
OE
ZZ
LBO
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
TQFP PIN NO.
32,33,34,35,36,37,44
45,46,47,48,49,50,80
81,82,83,84,99,100
85
88
89
87
98
97
92
93,94
86
64
31
SYMBOL
PIN NAME
TQFP PIN NO.
V DD
V SS
Power Supply(+3.3V) 14,15,16,41,65,66,91
Ground
17,40,67,90
N.C.
No Connect
1,2,3,6,7,25,28,29,30,
38,39,42,43,51,52,53,
56,57,75,78,79,95,96
DQa 0 ~ a8
DQb 0 ~ b8
Data Inputs/Outputs
Data Inputs/Outputs
58,59,62,63,68,69,72,73,74
8,9,12,13,18,19,22,23,24
V DDQ
Output Power Supply 4,11,20,27,54,61,70,77
(3.3V or 2.5V)
Output Ground
5,10,21,26,55,60,71,76
V SSQ
N OTE : A 0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-5-
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
165-PIN FBGA PACKAGE CONFIGURATIONS (TOP VIEW)
K7N163601A(512Kx36)
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
CS 1
BW c
BWb
CS2
CKE
ADV
A
A
NC
B
NC
A
CS2
BWd
BWa
CLK
WE
OE
A
A
NC
C
DQPc
NC
V DDQ
V SS
V SS
V SS
V SS
V SS
V DDQ
NC
DQPb
D
DQc
DQc
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
DQb
DQb
E
DQc
DQc
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
DQb
DQb
F
DQc
DQc
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
DQb
DQb
G
DQc
DQc
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
DQb
DQb
H
NC
V DD
NC
V DD
V SS
V SS
V SS
V DD
NC
NC
ZZ
J
DQd
DQd
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
DQa
DQa
K
DQd
DQd
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
DQa
DQa
L
DQd
DQd
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
DQa
DQa
M
DQd
DQd
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
DQa
DQa
N
DQPd
NC
V DDQ
V SS
NC
NC
NC
V SS
V DDQ
NC
DQPa
P
NC
NC
A
A
TDI
A1 *
TDO
A
A
A
NC
R
LBO
NC
A
A
TMS
A0 *
TCK
A
A
A
A
Note : * A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
PIN NAME
SYMBOL
PIN NAME
A
Address Inputs
A 0,A1
ADV
WE
CLK
CKE
CS1
CS2
CS2
BWx
(x=a,b,c,d)
Burst Address Inputs
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
OE
ZZ
LBO
Output Enable
Power Sleep Mode
Burst Mode Control
TCK
TMS
TDI
TDO
JTAG
JTAG
JTAG
JTAG
SYMBOL
PIN NAME
V DD
V SS
Power Supply
Ground
N.C.
No Connect
DQa
DQb
DQc
DQd
DQPa~Pd
Data
Data
Data
Data
Data
V DDQ
Output Power Supply
Inputs/Outputs
Inputs/Outputs
Inputs/Outputs
Inputs/Outputs
Inputs/Outputs
Test Clock
Test Mode Select
Test Data Input
Test Data Output
-6-
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
165-PIN FBGA PACKAGE CONFIGURATIONS (TOP VIEW)
K7N161801A(1Mx18)
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
CS 1
BWb
NC
CS2
CKE
ADV
A
A
A
B
NC
A
CS2
NC
BWa
CLK
WE
OE
A
A
NC
C
NC
NC
V DDQ
V SS
V SS
V SS
V SS
V SS
V DDQ
NC
DQPa
D
NC
DQb
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
NC
DQa
E
NC
DQb
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
NC
DQa
F
NC
DQb
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
NC
DQa
G
NC
DQb
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
NC
DQa
H
NC
V DD
NC
V DD
V SS
V SS
V SS
V DD
NC
NC
ZZ
J
DQb
NC
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
DQa
NC
K
DQb
NC
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
DQa
NC
L
DQb
NC
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
DQa
NC
M
DQb
NC
V DDQ
V DD
V SS
V SS
V SS
V DD
V DDQ
DQa
NC
N
DQPb
NC
V DDQ
V SS
NC
NC
NC
V SS
V DDQ
NC
NC
P
NC
NC
A
A
TDI
A1 *
TDO
A
A
A
NC
R
LBO
NC
A
A
TMS
A0 *
TCK
A
A
A
A
Note : * A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
PIN NAME
SYMBOL
PIN NAME
A
Address Inputs
A 0,A1
ADV
WE
CLK
CKE
CS1
CS2
CS2
BWx
(x=a,b)
Burst Address Inputs
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
OE
ZZ
LBO
Output Enable
Power Sleep Mode
Burst Mode Control
TCK
TMS
TDI
TDO
JTAG
JTAG
JTAG
JTAG
SYMBOL
PIN NAME
V DD
V SS
Power Supply
Ground
N.C.
No Connect
DQa
DQb
DQPa, Pb
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
V DDQ
Output Power Supply
Test Clock
Test Mode Select
Test Data Input
Test Data Output
-7-
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
FUNCTION DESCRIPTION
The K7N163601A and K7N161801A are NtRAMTM designed to sustain 100% bus bandwidth by eliminating turnaround cycle when
there is transition from Read to Write, or vice versa.
All inputs (with the exception of O E, LBO and ZZ) are synchronized to rising clock edges.
All read, write and deselect cycles are initiated by the ADV input. Subsequent burst addresses can be internally generated by the
burst advance pin (ADV). ADV should be driven to Low once the device has been deselected in order to load a new address for next
operation.
Clock Enable(CKE) pin allows the operation of the chip to be suspended as long as necessary. When CKE is high, all synchronous
inputs are ignored and the internal device registers will hold their previous values.
NtRAM TM latches external address and initiates a cycle, when CKE, ADV are driven to low and all three chip enables( CS 1, CS 2, CS 2)
are active .
Output Enable(OE ) can be used to disable the output at any given time.
Read operation is initiated when at the rising edge of the clock, the address presented to the address inputs are latched in the
address register, CKE is driven low, all three chip enables( CS 1, CS 2 , CS 2) are active, the write enable input signals WE are driven
high, and ADV driven low.The internal array is read between the first rising edge and the second rising edge of the clock and the data
is latched in the output register. At the second clock edge the data is driven out of the SRAM. Also during read operation OE must
be driven low for the device to drive out the requested data.
Write operation occurs when WE is driven low at the rising edge of the clock. B W[d:a] can be used for byte write operation. The pipelined NtRAMTM uses a late-late write cycle to utilize 100% of the bandwidth.
At the first rising edge of the clock, W E and address are registered, and the data associated with that address is required two cycle
later.
Subsequent addresses are generated by ADV High for the burst access as shown below. The starting point of the burst seguence is
provided by the external address. The burst address counter wraps around to its initial state upon completion.
The burst sequence is determined by the state of the LBO pin. When this pin is low, linear burst sequence is selected.
And when this pin is high, Interleaved burst sequence is selected.
During normal operation, ZZ must be driven low. When ZZ is driven high, the SRAM will enter a Power Sleep Mode after 2 cycles. At
this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM normally operates after 2 cycles of wake up
time.
BURST SEQUENCE TABLE
LBO PIN
HIGH
First Address
Fourth Address
(Interleaved Burst, LBO=High)
Case 1
A1
0
0
1
1
Case 2
A0
0
1
0
1
A1
0
0
1
1
Case 3
A0
1
0
1
0
A1
1
1
0
0
BQ TABLE
LBO PIN
Case 4
A0
0
1
0
1
A1
1
1
0
0
A0
1
0
1
0
(Linear Burst, LBO =Low)
LOW
First Address
Fourth Address
Case 1
A1
0
0
1
1
Case 2
A0
0
1
0
1
A1
0
1
1
0
Case 3
A0
1
0
1
0
A1
1
1
0
0
Case 4
A0
0
1
0
1
A1
1
0
0
1
A0
1
0
1
0
Note : 1. LBO pin must be tied to High or Low, and Floating State must not be allowed.
-8-
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
STATE DIAGRAM FOR N tRAMTM
WRITE
READ
READ
BEGIN
READ
BEGIN
WRITE
DS
RE
AD
W
DS
AD
W
R
IT
E
ST
BUR
TE
E
R
BURST
DS
BURST
READ
BURST
WRITE
COMMAND
DS
WRI
DESELECT
DS
BURST
TE
BUR
ST
D
R EA
DS
RI
WRITE
BURST
ACTION
DESELECT
READ
BEGIN READ
WRITE
BEGIN WRITE
BURST
BEGIN READ
BEGIN WRITE
CONTINUE DESELECT
Notes : 1. An IGNORE CLOCK EDGE cycle is not shown is the above diagram. This is because CKE HIGH only blocks the clock(CLK) input and does
not change the state of the device.
2. States change on the rising edge of the clock(CLK)
-9-
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
TRUTH TABLES
SYNCHRONOUS TRUTH TABLE
CS 1
CS 2
CS 2
ADV
WE
BWx
OE
CKE
CLK
ADDRESS ACCESSED
Operation
H
X
X
L
X
X
X
L
↑
N/A
Not Selected
X
L
X
L
X
X
X
L
↑
N/A
Not Selected
X
X
H
L
X
X
X
L
↑
N/A
Not Selected
X
X
X
H
X
X
X
L
↑
N/A
Not Selected Continue
L
H
L
L
H
X
L
L
↑
External Address
Begin Burst Read Cycle
X
X
X
H
X
X
L
L
↑
Next Address
Continue Burst Read Cycle
L
H
L
L
H
X
H
L
↑
External Address
NOP/Dummy Read
X
X
X
H
X
X
H
L
↑
Next Address
Dummy Read
L
H
L
L
L
L
X
L
↑
External Address
Begin Burst Write Cycle
X
X
X
H
X
L
X
L
↑
Next Address
Continue Burst Write Cycle
L
H
L
L
L
H
X
L
↑
N/A
NOP/Write Abort
X
X
X
H
X
H
X
L
↑
Next Address
Write Abort
X
X
X
X
X
X
X
H
↑
Current Address
Ignore Clock
Notes : 1. X means "Don ′t Care".
2. The rising edge of clock is symbolized by (↑).
3. A continue deselect cycle can only be enterd if a deselect cycle is executed first.
4. WRITE = L means Write operation in WRITE TRUTH TABLE.
WRITE = H means Read operation in WRITE TRUTH TABLE.
5. Operation finally depends on status of asynchronous input pins(ZZ and OE).
WRITE TRUTH TABLE(x36)
WE
BWa
BWb
BW c
BW d
OPERATION
H
X
X
X
X
READ
L
L
H
H
H
WRITE BYTE a
L
H
L
H
H
WRITE BYTE b
L
H
H
L
H
WRITE BYTE c
L
H
H
H
L
WRITE BYTE d
L
L
L
L
L
WRITE ALL BYTEs
L
H
H
H
H
WRITE ABORT/NOP
Notes : 1. X means "Don′t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(↑).
WRITE TRUTH TABLE(x18)
WE
BWa
BWb
OPERATION
H
X
X
READ
L
L
H
WRITE BYTE a
L
H
L
WRITE BYTE b
L
L
L
WRITE ALL BYTEs
L
H
H
WRITE ABORT/NOP
Notes : 1. X means "Don′t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK( ↑).
- 10 -
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
ASYNCHRONOUS TRUTH TABLE
OPERATION
ZZ
OE
I/O STATUS
Sleep Mode
H
X
High-Z
L
L
DQ
L
H
High-Z
Write
L
X
Din, High-Z
Deselected
L
X
High-Z
Read
Notes
1. X means "Don′ t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
ABSOLUTE MAXIMUM RATINGS*
SYMBOL
RATING
UNIT
Voltage on V DD Supply Relative to V SS
PARAMETER
V DD
-0.3 to 4.6
V
Voltage on Any Other Pin Relative to VSS
V IN
-0.3 to VDD+0.3
V
Power Dissipation
PD
1.6
W
TSTG
-65 to 150
°C
Storage Temperature
Operating Temperature
Commercial
T OPR
0 to 70
°C
Industrial
T OPR
-40 to 85
°C
TBIAS
-10 to 85
°C
Storage Temperature Range Under Bias
*Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING CONDITIONS at 3.3V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
Supply Voltage
Ground
SYMBOL
MIN
Typ.
MAX
UNIT
V DD
3.135
3.3
3.465
V
V DDQ
3.135
3.3
3.465
V
V SS
0
0
0
V
* The above parameters are also guaranteed at industrial temperature range.
OPERATING CONDITIONS at 2.5V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
Supply Voltage
Ground
SYMBOL
MIN
Typ.
MAX
UNIT
V DD
3.135
3.3
3.465
V
V DDQ
2.375
2.5
2.9
V
V SS
0
0
0
V
Test Condition
Min
Max
Unit
CIN
V IN=0V
-
5
pF
C OUT
V OUT =0V
-
7
pF
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA =25°C, f=1MHz)
Parameter
Input Capacitance
Output Capacitance
Symbol
*Notes : Sampled not 100% tested.
- 11 -
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
DC ELECTRICAL CHARACTERISTICS (VDD =3.3V+0.165V/-0.165V, TA =0°C to +70°C)
PARAMETER
SYMBOL
Input Leakage Current(except ZZ)
IIL
Output Leakage Current
IOL
Operating Current
ICC
MIN
MAX
UNIT
V DD=Max ; VIN=VSS to V DD
-2
+2
µA
Output Disabled, Vout=V SS to V DDQ
-2
+2
µA
-25
-
470
Device Selected, I OUT=0mA,
-20
-
400
ZZ≤V IL , Cycle Time ≥ tCYC Min
-16
-
350
-13
-
290
-25
-
120
-20
-
100
-16
-
90
-13
-
90
-
70
mA
-
60
mA
TEST CONDITIONS
Device deselected, I OUT=0mA,
ISB
ZZ≤V IL , f=Max, All Inputs≤0.2V or ≥
V DD-0.2V
NOTES
mA
1,2
mA
Device deselected, I OUT=0mA,
Standby Current
ISB1
ZZ ≤0.2V,
f=0, All Inputs=fixed (V DD-0.2V or
Device deselected, I OUT=0mA,
ISB2
ZZ≥V DD-0.2V, f=Max, All Inputs ≤V IL
or ≥V IH
Output Low Voltage(3.3V I/O)
V OL
IOL =8.0mA
-
0.4
V
Output High Voltage(3.3V I/O)
V OH
IOH=-4.0mA
2.4
-
V
Output Low Voltage(2.5V I/O)
V OL
IOL =1.0mA
-
0.4
V
Output High Voltage(2.5V I/O)
V OH
IOH=-1.0mA
2.0
-
V
Input Low Voltage(3.3V I/O)
V IL
-0.3*
0.8
V
Input High Voltage(3.3V I/O)
V IH
2.0
V DD+0.3**
V
Input Low Voltage(2.5V I/O)
V IL
-0.3*
0.7
V
Input High Voltage(2.5V I/O)
V IH
1.7
V DD+0.3**
V
3
3
Notes : 1. The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. VIH =VDDQ +0.3V
VIH
VSS
VSS- 1.0V
20% tCYC (MIN)
TEST CONDITIONS
(VDD=3.3V+0.165V/-0.165V,VDDQ=3.3V+0.165/-0.165V or VDD=3.3V+0.165V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0to70°C)
PARAMETER
Input Pulse Level(for 3.3V I/O)
Input Pulse Level(for 2.5V I/O)
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
Input and Output Timing Reference Levels for 3.3V I/O
Input and Output Timing Reference Levels for 2.5V I/O
Output Load
VALUE
0 to 3.0V
0 to 2.5V
1.0V/ns
1.0V/ns
1.5V
V DDQ/2
See Fig. 1
* The above parameters are also guaranteed at industrial temperature range.
- 12 -
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
Output Load(A)
Output Load(B),
(for tLZC, tLZOE, tHZOE & tHZC)
+3.3V for 3.3V I/O
/+2.5V for 2.5V I/O
RL=50Ω
Dout
Zo=50Ω
30pF*
VL=1.5V for 3.3V I/O
V DDQ/2 for 2.5V I/O
319Ω / 1667Ω
Dout
353Ω / 1538Ω
5pF*
* Including Scope and Jig Capacitance
Fig. 1
AC TIMING CHARACTERISTICS (VDD=3.3V+0.165V/-0.165V, T A=0 to 70°C)
-25
PARAMETER
SYMBOL
MIN
-20
MAX
MIN
-16
MAX
MIN
-13
MAX
MIN
MAX
UNIT
Cycle Time
tCYC
4.0
-
5.0
-
6.0
-
7.5
-
ns
Clock Access Time
tCD
-
2.6
-
3.2
-
3.5
-
4.2
ns
Output Enable to Data Valid
tOE
-
2.6
-
3.2
-
3.5
-
4.2
ns
Clock High to Output Low-Z
tLZC
1.5
-
1.5
-
1.5
-
1.5
-
ns
Output Hold from Clock High
tOH
1.5
-
1.5
-
1.5
-
1.5
-
ns
Output Enable Low to Output Low-Z
tLZOE
0
-
0
-
0
-
0
-
ns
Output Enable High to Output High-Z
tHZOE
-
2.6
-
3.0
-
3.0
-
3.5
ns
Clock High to Output High-Z
tHZC
-
2.6
-
3.0
-
3.0
-
3.5
ns
Clock High Pulse Width
tCH
1.7
-
2.0
-
2.2
-
3.0
-
ns
Clock Low Pulse Width
tCL
1.7
-
2.0
-
2.2
-
3.0
-
ns
Address Setup to Clock High
tAS
1.2
-
1.4
-
1.5
-
1.5
-
ns
CKE Setup to Clock High
tCES
1.2
-
1.4
-
1.5
-
1.5
-
ns
Data Setup to Clock High
tDS
1.2
-
1.4
-
1.5
-
1.5
-
ns
Write Setup to Clock High (WE, BW X )
tWS
1.2
-
1.4
-
1.5
-
1.5
-
ns
Address Advance Setup to Clock High
tADVS
1.2
-
1.4
-
1.5
-
1.5
-
ns
Chip Select Setup to Clock High
tCSS
1.2
-
1.4
-
1.5
-
1.5
-
ns
Address Hold from Clock High
tAH
0.3
-
0.4
-
0.5
-
0.5
-
ns
CKE Hold from Clock High
tCEH
0.3
-
0.4
-
0.5
-
0.5
-
ns
Data Hold from Clock High
tDH
0.3
-
0.4
-
0.5
-
0.5
-
ns
Write Hold from Clock High (WE , BW X)
tWH
0.3
-
0.4
-
0.5
-
0.5
-
ns
Address Advance Hold from Clock High
tADVH
0.3
-
0.4
-
0.5
-
0.5
-
ns
Chip Select Hold from Clock High
tCSH
0.3
-
0.4
-
0.5
-
0.5
-
ns
ZZ High to Power Down
tPDS
2
-
2
-
2
-
2
-
cycle
ZZ Low to Power Up
tPUS
2
-
2
-
2
-
2
-
cycle
Note s : 1. The above parameters are also guaranteed at industrial temperature range.
2 . All address inputs must meet the specified setup and hold times for all rising clock(CLK) edges when ADV is sampled low and CS is sampled
low. All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected.
3. Chip selects must be valid at each rising edge of CLK(when ADV is Low) to remain enabled.
4. A write cycle is defined by WE low having been registered into the device at ADV Low, A Read cycle is defined by WE High with ADV Low,
Both cases must meet setup and hold times.
5. To avoid bus contention, At a given voltage and temperature tLZC is more than tHZC.
The specs as shown do not imply bus contention because tLZC is a Min. parameter that is worst case at totally different test conditions
(0°C,3.465V) than tH Z C, which is a Max. parameter(worst case at 70°C,3.135V)
It is not possible for two SRAMs on the same board to be at such different voltage and temperature.
- 13 -
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
SLEEP MODE
SLEEP MODE is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of
SLEEP MODE is dictated by the length of time the ZZ is in a High state.
After entering SLEEP MODE, all inputs except ZZ become disabled and all outputs go to High-Z
The ZZ pin is an asynchronous, active high input that causes the device to enter SLEEP MODE.
When the ZZ pin becomes a logic High, I SB2 is guaranteed after the time tZZI is met. Any operation pending when entering SLEEP
MODE is not guaranteed to successful complete. Therefore, SLEEP MODE (READ or WRITE) must not be initiated until valid pending operations are completed. similarly, when exiting SLEEP MODE during t PUS, only a DESELECT or READ cycle should be given
while the SRAM is transitioning out of SLEEP MODE.
SLEEP MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION
Current during SLEEP MODE
CONDITIONS
SYMBOL
ZZ ≥ V IH
ISB2
MIN
MAX
60
UNITS
mA
ZZ active to input ignored
tPDS
2
cycle
ZZ inactive to input sampled
tPUS
2
cycle
ZZ active to SLEEP current
tZZI
ZZ inactive to exit SLEEP current
tRZZI
2
cycle
0
SLEEP MODE WAVEFORM
K
t PDS
ZZ setup cycle
tPUS
ZZ recovery cycle
ZZ
t ZZI
Isupply
ISB2
tRZZI
All inputs
(except ZZ)
Deselect or Read Only
Deselect or Read Only
Normal
operation
cycle
Outputs
(Q)
High-Z
DON′ T CARE
- 14 -
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
IEEE 1149.1 TEST ACCESS PORT AND BOUNDARY SCAN-JTAG
This part contains an IEEE standard 1149.1 Compatible Test Access Port(TAP). The package pads are monitored by the Serial Scan
circuitry when in test mode. This is to support connectivity testing during manufacturing and system diagnostics. Internal data is not
driven out of the SRAM under JTAG control. In conformance with IEEE 1149.1, the SRAM contains a TAP controller, Instruction Register, Bypass Register and ID register. The TAP controller has a standard 16-state machine that resets internally upon power-up,
therefore, TRST signal is not required. It is possible to use this device without utilizing the TAP. To disable the TAP controller without
interfacing with normal operation of the SRAM, TCK must be tied to VSS to preclude mid level input. TMS and TDI are designed so an
undriven input will produce a response identical to the application of a logic 1, and may be left unconnected. But they may also be
tied to VDD through a resistor. TDO should be left unconnected.
JTAG Block Diagram
JTAG Instruction Coding
IR2 IR1
SRAM
CORE
TDI
BYPASS Reg.
TDO
Identification Reg.
Instruction Reg.
Control Signals
TMS
TCK
TAP Controller
IR0
Instruction
TDO Output
Notes
0
0
0
EXTEST
Boundary Scan Register
1
0
0
1
IDCODE
Identification Register
3
0
1
0
SAMPLE-Z
Boundary Scan Register
2
0
1
1
BYPASS
Bypass Register
4
1
0
0
SAMPLE
Boundary Scan Register
5
1
0
1
RESERVED
Do Not Use
6
1
1
0
BYPASS
Bypass Register
4
1
1
1
BYPASS
Bypass Register
4
NOTE :
1. Places DQs in Hi-Z in order to sample all input data regardless of other
SRAM inputs. This instruction is not IEEE 1149.1 compliant.
2. Places DQs in Hi-Z in order to sample all input data regardless of other
SRAM inputs.
3. TDI is sampled as an input to the first ID register to allow for the serial shift
of the external TDI data.
4. Bypass register is initiated to V SS when BYPASS instruction is invoked. The
Bypass Register also holds serially loaded TDI when exiting the Shift DR
states.
5. SAMPLE instruction dose not places DQs in Hi-Z.
6. This instruction is reserved for future use.
TAP Controller State Diagram
1
Test Logic Reset
0
0
Run Test Idle
1
1
Select DR
0
Exit2 DR
1
1
Update DR
0
- 15 -
1
Capture IR
0
0
Shift IR
1
1
Exit1 DR
0
Pause DR
1
Select IR
0
1
Capture DR
0
Shift DR
1
1
1
0
0
0
Exit1 IR
0
Pause IR
1
Exit2 IR
1
Update IR
1
0
0
0
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
SCAN REGISTER DEFINITION
Part
Instruction Register
Bypass Register
ID Register
Boundary Scan
512Kx36
3 bits
1 bits
32 bits
75 bits
1Mx18
3 bits
1 bits
32 bits
75 bits
ID REGISTER DEFINITION
Part
Revision Number
(31:28)
Part Configuration
(27:18)
Vendor Definition
(17:12)
Samsung JEDEC Code
(11: 1)
Start Bit(0)
512Kx36
0000
00111 00100
XXXXXX
00001001110
1
1Mx18
0000
01000 00011
XXXXXX
00001001110
1
165FBGA BOUNDARY SCAN EXIT ORDER(x36)
165FBGA BOUNDARY SCAN EXIT ORDER(x18)
1
1R
LBO
CLK
6B
39
1
1R
LBO
CLK
6B
39
2
6N
NC
NC
11B
40
2
6N
NC
NC
11B
40
3
11P
NC
NC
1A
41
3
11P
NC
NC
1A
41
4
8P
A
CS2
6A
42
4
8P
A
CS2
6A
42
5
8R
A
BWa
5B
43
5
8R
A
BW a
5B
43
6
9R
A
BWb
5A
44
6
9R
A
NC
5A
44
7
9P
A
BWc
4A
45
7
9P
A
BW b
4A
45
8
10P
A
BWd
4B
46
8
10P
A
NC
4B
46
9
10R
A
CS2
3B
47
9
10R
A
CS2
3B
47
10
11R
A
CS1
3A
48
10
11R
A
CS1
3A
48
11
11H
ZZ
A
2A
49
11
11H
ZZ
A
2A
49
12
11N
DQa
A
2B
50
12
11N
NC
A
2B
50
13
11M
DQa
NC
1B
51
13
11M
NC
NC
1B
51
14
11L
DQa
DQc
1C
52
14
11L
NC
NC
1C
52
15
11K
DQa
DQc
1D
53
15
11K
NC
NC
1D
53
16
11J
DQa
DQc
1E
54
16
11J
NC
NC
1E
54
17
10M
DQa
DQc
1F
55
17
10M
DQa
NC
1F
55
18
10L
DQa
DQc
1G
56
18
10L
DQa
NC
1G
56
19
10K
DQa
DQc
2D
57
19
10K
DQa
DQb
2D
57
20
10J
DQa
DQc
2E
58
20
10J
DQa
DQb
2E
58
21
11G
DQb
DQc
2F
59
21
11G
DQa
DQb
2F
59
22
11F
DQb
DQc
2G
60
22
11F
DQa
DQb
2G
60
23
11E
DQb
DQd
1J
61
23
11E
DQa
DQb
1J
61
24
11D
DQb
DQd
1K
62
24
11D
DQa
DQb
1K
62
25
10G
DQb
DQd
1L
63
25
11C
DQa
DQb
1L
63
26
10F
DQb
DQd
1M
64
26
10F
NC
DQb
1M
64
27
10E
DQb
DQd
2J
65
27
10E
NC
DQb
1N
65
28
10D
DQb
DQd
2K
66
28
10D
NC
NC
2K
66
29
11C
DQb
DQd
2L
67
29
10G
NC
NC
2L
67
30
11A
NC
DQd
2M
68
30
11A
A
NC
2M
68
31
10A
A
DQd
1N
69
31
10A
A
NC
2J
69
32
10B
A
A
3P
70
32
10B
A
A
3P
70
33
9A
A
A
3R
71
33
9A
A
A
3R
71
34
9B
A
A
4R
72
34
9B
A
A
4R
72
35
8A
ADV
A
4P
73
35
8A
ADV
A
4P
73
36
8B
OE
A1
6P
74
36
8B
OE
A1
6P
74
37
7A
CKE
A0
6R
75
37
7A
CKE
A0
6R
75
38
7B
WE
38
7B
WE
NOTE,
NC ; Don′t Care
- 16 -
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
JTAG DC OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Power Supply Voltage
V DD
3.135
3.3
3.465
V
Input High Level ( 3.3V I/O / 2.5V I/O )
VI H
2.0 / 1.7
-
V DD+0.3
V
Input Low Level ( 3.3V I/O / 2.5V I/O )
V IL
-0.3
-
0.8 / 0.7
V
Output High Voltage( 3.3V I/O / 2.5V I/O )
VO H
2.4 / 2.0
-
-
V
Output Low Voltage( 3.3V I/O / 2.5V I/O )
V OL
-
-
0.4 / 0.4
V
Note
1
NOTE : The input level of SRAM pin is to follow the SRAM DC specification.
1.
In Case of I/O Pins, the Max. VIH =V DDQ +0.3V.
JTAG AC TEST CONDITIONS
Symbol
Min
Unit
Input High/Low Level( 3.3V I/O , 2.5V I/O )
Parameter
V IH/VIL
3.0/0 , 2.5/0
V
Input Rise/Fall Time( 3.3V I/O , 2.5V I/O )
TR/TF
1.0/1.0 , 1.0/1.0
ns
V DDQ/2
V
Input and Output Timing Reference Level
Note
JTAG AC Characteristics
Parameter
Symbol
Min
Max
Unit
TCK Cycle Time
tCHCH
50
-
ns
TCK High Pulse Width
tCHCL
20
-
ns
TCK Low Pulse Width
tCLCH
20
-
ns
TMS Input Setup Time
tMVCH
5
-
ns
TMS Input Hold Time
tCHMX
5
-
ns
TDI Input Setup Time
tDVCH
5
-
ns
TDI Input Hold Time
tCHDX
5
-
ns
SRAM Input Setup Time
tSVCH
5
-
ns
SRAM Input Hold Time
tCHSX
5
-
ns
Clock Low to Output Valid
tCLQV
0
10
ns
Note
JTAG TIMING DIAGRAM
TCK
tC H C H
tC H C L
t MVCH
t CHMX
t DVCH
tC H D X
t SVCH
t CHSX
tC L C H
TMS
TDI
PI
(SRAM)
t CLQV
TDO
- 17 -
Nov. 2003
Rev 3.0
- 18 -
Data Out
OE
ADV
CS
WRITE
Address
CKE
Clock
A1
tADVH
tCSH
tWH
tAH
tLZOE
tOE
Q 1-1
A2
tHZOE
tCEH
Q 2-1
tCD
tOH
tCYC
Q2-2
tCL
NO TE S : WRITE = L me ans WE = L, an d B Wx = L
CS = L mean s CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS 2 = H, or CS 1 = L, and CS 2 = L
tADVS
tCSS
tWS
tAS
tCES
tCH
Q 2-3
A3
TIMING WAVEFORM OF READ CYCLE
Q2-4
Q 3-1
Q 3-2
Q3-3
Un defined
Do n′t Care
Q3-4
tHZC
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
Nov. 2003
Rev 3.0
- 19 -
Data Out
Data In
OE
ADV
CS
WRITE
Address
CKE
Clock
Q 0-4
tHZOE
D1-1
A2
tCYC
tCL
D2-1
D2-2
NOTES : WRITE = L means WE = L, a nd BWx = L
CS = L me ans CS1 = L, CS2 = H a nd CS 2 = L
CS = H mean s CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L
Q0-3
A1
tCES tCEH
tCH
D2-3
A3
TIMING WAVEFORM OF WRTE CYCLE
D2-4
D3-1
tDS
D3-2
tDH
D3-3
Undefined
Don′t Ca re
D3-4
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
Nov. 2003
Rev 3.0
- 20 -
Data In
Data Out
OE
ADV
CS
WRITE
Address
CKE
Clock
tOE
tLZOE
A2
Q1
A3
tDS
D2
tDH
Q3
A4
NOTES : WRITE = L means WE = L, a nd BWx = L
CS = L me ans CS1 = L, CS2 = H a nd CS 2 = L
CS = H mean s CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L
A1
tCES tCEH
A5
Q4
A6
D5
A7
TIMING WAVEFORM OF SINGLE READ/WRITE
tCH
Q6
tCYC
tCL
A8
Q7
A9
Undefined
Don′t Car e
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
Nov. 2003
Rev 3.0
- 21 -
Data In
A1
tCES tCEH
tCD
tLZC
A2
Q1
tHZC
A3
NO TE S : WRITE = L me ans WE = L, an d B Wx = L
CS = L mean s CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS 2 = H, or CS 1 = L, and CS 2 = L
Data Out
OE
ADV
CS
WRITE
Address
CKE
Clock
tDS
D2
A4
TIMING WAVEFORM OF CKE OPERATION
tDH
tCH
Q3
tCYC
tCL
A5
Q4
A6
Undefined
Don′t Care
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
Nov. 2003
Rev 3.0
- 22 -
Data In
Data Out
OE
ADV
CS
WRITE
Address
CKE
Clock
A1
tCEH
tOE
tLZOE
A2
Q1
Q2
tHZC
A3
NO TE S : WRITE = L me ans WE = L, an d B Wx = L
CS = L mean s CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS 2 = H, or CS 1 = L, and CS 2 = L
tCES
D3
tDS tDH
A4
tCD
tLZC
TIMING WAVEFORM OF CS OPERATION
Q4
A5
tCH
tCYC
tCL
D5
Undefined
Don′t Care
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
PACKAGE DIMENSIONS
100-TQFP-1420A
Units ; millimeters/Inches
22.00
± 0.30
20.00
± 0.20
0~8°
0.127 +- 0.10
0.05
16.00
± 0.30
14.00 ± 0.20
0.10 MAX
(0.83)
0.50 ± 0.10
#1
0.65
0.30 ± 0.10
0.10 MAX
(0.58)
1.40
0.50 ± 0.10
- 23 -
± 0.10
1.60 MAX
0.05 MIN
Nov. 2003
Rev 3.0
K7N163601A
K7N161801A
512Kx36 & 1Mx18 Pipelined NtRAM TM
165 FBGA PACKAGE DIMENSIONS
13mm x 15mm Body, 1.0mm Bump Pitch, 11x15 Ball Array
A
B
Top View
C
Side View
D
A
F
E
G
B
Bottom View
∅H
E
Symbol
Value
Units
A
15 ± 0.1
mm
B
13 ± 0.1
mm
C
1.3 ± 0.1
D
0.35 ± 0.05
Note
Symbol
Value
Units
E
1.0
mm
F
14.0
mm
mm
G
10.0
mm
mm
H
0.5 ± 0.05
mm
- 24 -
Note
Nov. 2003
Rev 3.0
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