First Sensor APD Hybrid Series Data Sheet Part Description AD500-9-400M-TO5 US Order # 05-051-01, # 05-051-02 International Order # 50049001, # 50049002 PIN 5 CASE/ GND 2.2 PIN 1 Vout+ Ø 0.46 5 PL Ø9.2 Ø6.60 113° VIEWING Ø8.3 ANGLE PIN 2 VCC PIN 4 Ø5.08 PIN CIRCLE Vout- 4.2 ±1 PIN 3 7.6 MIN 5 PL 1.00 SQ +VBIAS BACKSIDE VIEW ACTIVE AREA: 0.196 mm 2 (500 µm DIAMETER) CHIP DIMENSIONS APPLICATIONS • Lidar • Analytical instruments • Medical equipment ABSOLUTE MAXIMUM RATING SYMBOL PARAMETER MIN TSTG TOP Storage Temp Operating Temp Soldering Temp Power Dissipation Single Supply Voltage Supply Current TSOLDERING P Vcc Icc -55 0 +3.0 - SCHEMATIC VCC (+5V) PIN 2 C1 SPECTRAL RESPONSE at M = 100 MAX UNITS +125 +60 +240 360 +5.5 63 °C °C °C mW V mA 70 OUT+ PIN 1 60 50 40 30 20 10 0 400 500 600 OUTPIN 4 AD500-9 700 800 900 1000 1100 WAVELENGTH (nm) PIN 5 CASE/GND C2 C S Ro ∅ 0.500 mm active area Low noise High gain Long term stability RESPONSIVITY (A/W) • • • • PLI A NT OM DESCRIPTION The AD500-9-400M-TO5 is an Avalanche Photodiode Amplifier Hybrid containing a 0.196 mm2 active area APD chip integrated with an internal transimpedance amplifier. Hermetically packaged in a TO-5 with a borosilicate glass window cap. H FEATURES PIN 3 +V BIAS ELECTRO-OPTICAL CHARACTERISTICS @ 23°° C (VCC = single supply +3.3V, RL = 100W unless otherwise specified) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ƒ-3dB S Icc Frequency Response Sensitivity* Supply Current -3dB @ 905 nm λ = 905 nm; M = 100 Dark state ------- 400 145 34 ----63 MHz mV/µW mA * Sensitivity = APD responsivity (0.58 A/W X 100 gain) x TIA gain (2.5K) Use US order number 05-051-01, or International order number 50049001 for breakdown voltage range of 160-200 Volts. Use US order number 05-051-02, or International order number 50049002 for breakdown voltage range of 200-240 Volts. These devices are sensitive to electrostatic discharge. Please use ESD precautions when handling. Disclaimer: Due to our policy of continued development, specifications are subject to change without notice. 11/6/2013 AVALANCHE PHOTODIODE DATA @ 23 °C SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ID C VBR Dark Current M = 100 (see note 2) --0.8 5.0 nA Capacitance M = 100 (see note 2) --1.2 --pF Breakdown Voltage (see note 1) ID = 2 µA 160 --240 V Temperature Coefficient of VBR 1.25 --1.55 V/K 52 60 58 A/W Responsivity M = 100; = 0 V; λ = 905 nm Bandwidth -3dB --0.5 --GHz ∆ƒ3dB Rise Time M = 100 --0.55 --ns tr Optimum Gain 50 60 ------“Excess Noise” factor M = 100 2.5 ----“Excess Noise” index M = 100 0.2 ----Noise Current M = 100 1.0 pA/Hz1/2 --Max Gain 200 --1/2 ----NEP Noise Equivalent Power 2.0 X 10-14 M = 100; λ = 905 nm W/Hz Note 1: The following different breakdown voltage ranges are available: (160 – 200 V), (200 – 240 V). Note 2: Measurement conditions: Setup of photo current 1 nA at M = 1 and irradiated by a 880 nm, 80 nm bandwidth LED. Increase the photo current up to 100 nA, (M = 100) by internal multiplication due to an increasing bias voltage. TRANSIMPEDANCE AMPLIFIER DATA @ 25 °C (Vcc = +3.0 V to 5.5 V, TA = 0°C to 70°C, 100Ω load between OUT+ and OUT-. Typical values are at TA = 25°C, Vcc = +3.3 V) PARAMETER MIN TYP MAX Supply Voltage TEST CONDITIONS 3 5 5.5 UNITS V Supply Current --2.10 48 220 2 1 ----- 34 63 3.40 52 575 ----668 ----------- mA Transimpedance Differential, measured with 40 µA p-p signal 2.75 kΩ Output impedance Single ended per side 50 Ω Maximum Differential Output Voltage 380 mV p-p Input = 2 mA p-p with 100 Ω differential termination AC Input Overload --mA p-p DC Input Overload --mA Input Referred RMS Noise TO-5 package, see note 4 490 nA Input Referred Noise Density See note 4 11 pA/Hz1/2 Small signal bandwidth Source capacitance = 0.85 pF, see note 3 1.525 2.00 GHz --Low Frequency Cutoff -3 dB, input < 20 µA DC 30 kHz Transimpedance Linear Range Peak to peak 0.95 < linearity < 1.05 40 --µA p-p Power Supply Rejection Ratio Output referred, f < 2 MHz, PSSR = -20 Log (∆Vout / --50 dB (PSRR) ∆Vcc) Note 3: Source capacitance for AD500-9-400M-TO5 is the capacitance of APD. Note 4: Input referred noise is calculated as RMS output noise/ (gain at f = 10 Mhz). Noise density is (input referred noise)/√bandwidth. TRANSFER CHARACTERISTICS The circuit used is an avalanche photodiode directly coupled to a high speed data handling transimpedance amplifier. The output of the APD (light generated current) is applied to the input of the amplifier. The amplifier output is in the form of a differential voltage pulsed signal. The APD responsivity curve is provided in Fig. 2. The term Amps/Watt involves the area of the APD and can be expressed as Amps/mm2/Watts/mm2, where the numerator applies to the current generated divided by the area of the detector, the denominator refers to the power of the radiant energy present per unit area. As an example assume a radiant input of 1 microwatt at 905 nm. The APD’s corresponding responsivity is 0.58 A/W. If energy in = 1 µW, then the current from the APD = (0.58 A/W) x (1x10-6W) = 0.58 µA. We can then factor in the typical gain of the APD of 100, making the input current to the amplifier 58 µA. From Fig. 5 we can see the amplifier output will be approximately 100 mV p-p. APPLICATION NOTES The AD500-9-400M-TO5 is a high speed optical data receiver. It incorporates an internal transimpedance amplifier with an avalanche photodiode. This detector requires +3.5 V to +5.0 V voltage supply for the amplifier and a high voltage supply (100-240 V) for the APD. The internal APD follows the gain curve published for the AD500-9-TO52-S1 avalanche photodiode. The transimpedance amplifier provides differential output signals in the range of 200 millivolts differential. In order to achieve highest gain, the avalanche photodiode needs a positive bias voltage (Fig. 1). However, a current limiting resistor must be placed in series with the photodiode bias voltage to limit the current into the transimpedance amplifier. Failure to limit this current may result in permanent failure of the device. The suggested initial value for this limiting resistor is 390 KOhm. When using this receiver, good high frequency placement and routing techniques should be followed in order to achieve maximum frequency response. This includes the use of bypass capacitors, short leads and careful attention to impedance matching. The large gain bandwidth values of this device also demand that good shielding practices be used to avoid parasitic oscillations and reduce output noise. 11/6/2013 Fig. 1: APD GAIN vs BIAS VOLTAGE Fig. 2: APD SPECTRAL RESPONSE (M = 1) 0.7 1000 0.6 0.5 GAIN A/W 100 0.4 0.3 10 0.2 0.1 1 140 150 160 170 180 190 200 210 0.0 400 220 500 APPLIED VOLTAGE (V) Fig. 3 : AMPLIFIER OUTPUT vs TEMPERATURE 600 700 800 900 WAVELENGTH (nm) 1000 1100 Fig.4 : APD CAPACITANCE vs BIAS VOLTAGE 380 35 360 30 CAPACITANCE (pF) AMPLITUDE (mV) 400 340 320 300 280 260 25 20 15 10 240 5 220 0 200 0 0 20 40 60 10 20 30 40 50 60 70 80 REVERSE BIAS (V) 80 AMBIENT TEMPERATURE (°C) Fig. 6: TOTAL FREQUENCY RESPONSE 200 150 TRANSIMPEDANCE (db) DIFFERENTIAL OUTPUT VOLTAGE (mV p-p) Fig. 5: AMPLIFIER TRANSFER FUNCTION 100 50 0 -50 -100 -150 -200 -100 -75 -50 -25 0 25 50 INPUT CURRENT (µ A) 75 100 70 65 60 55 50 1M 10M 100M 400M 1G FREQUENCY (Hz) USA: International sales: First Sensor, Inc. 5700 Corsa Avenue, #105 Westlake Village, CA 91362 USA T + 818 706-3400 F + 818 889-7053 [email protected] www.first-sensor.com 11/6/2013 First Sensor AG Peter-Behrens-Str. 15 12459 Berlin, Germany T + 49 30 6399 2399 F + 49 30 639923-752 [email protected] www.first-sensor.com