Panasonic DA22F2100L Silicon epitaxial planar type Datasheet

Doc No. TT4-EA-12363
Revision. 3
Product Standards
Fast Recovery Diode
DA22F2100L
DA22F2100L
Silicon epitaxial planar type
Unit: mm
1.6
For high speed switching circuits
0.13
2
 Features
2.6
3.5
 Small reverse current IR
 Short reverse recovery time trr
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
 Marking Symbol: 3Q
0.55
0.8
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
VRRM
VRSM
IF
IFSM
Tj
Topr
Tstg
Mini2-F4-B
SC-109D
SOD-123
Panasonic
JEITA
Code
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
Forward current
Non-repetitive peak forward surge current *1
Junction temperature
Operating ambient temperature
Storage temperature
1. Cathode
2. Anode
Rating
Unit
200
200
1.0
15
-40 to +150
-40 to +85
-40 to +150
V
V
A
A
°C
°C
°C
Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Internal Connection
2
1
Page 1 of 4
Established : 2010-02-12
Revised
: 2013-05-23
Doc No. TT4-EA-12363
Revision. 3
Product Standards
Fast Recovery Diode
DA22F2100L
 Electrical Characteristics Ta = 25 C  3 C
Parameter
Symbol
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
VF
IRRM
Ct
*1
trr
Conditions
Min
IF = 1.0 A
VRRM = 200 V
VR = 0 V, f = 1 MHz
IF= 0.5 A, IR = 1 A
Irr = 0.25 x IR
Typ
Max
Unit
0.98
10
V
A
pF
35
ns
60
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
3. *1: trr test circuit
50 Ω
50 Ω
trr
D.U.T.
IF
5.5 Ω
0.25 × IR
IR
Page 2 of 4
Established : 2010-02-12
Revised
: 2013-05-23
Doc No. TT4-EA-12363
Revision. 3
Product Standards
Fast Recovery Diode
DA22F2100L
Technical Data ( reference )
IF - VF
IR - VR
1.E-01
1.E-02
1.E-03
Ta = 125 °C
Reverse current IR (A)
Forward current IF (A)
1.E+00
85 °C
1.E-03
25 °C
1.E-04
-40 °C
1.E-05
1.E-06
0.0
IR value is not exceeding
100 pA at -40 °C
1.E-04
Ta = 125 °C
1.E-05
1.E-06
85 °C
1.E-07
1.E-08
25 °C
1.E-09
1.E-10
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage VF (V)
0
40
80
120
160
200
Reverse voltage VR (V)
Ct - VR
Terminal capacitance Ct (pF)
60
Ta = 25 °C
f = 1 MHz
50
40
30
20
10
0
0
10
20
30
40
Reverse voltage VR (V)
Page 3 of 4
Established : 2010-02-12
Revised
: 2013-05-23
Doc No. TT4-EA-12363
Revision. 3
Product Standards
Fast Recovery Diode
DA22F2100L
Mini2-F4-B
Unit: mm
1.6±0.1
+0.05
0.13-0.02
(7°)
3.5±0.1
2.6±0.1
2
0 to 0.1
(7°)
0 to 0.3
0.80±0.05
0.55±0.10
0.45±0.10
1
 Land Pattern (Reference) (Unit: mm)
0.8
3.1
0.8
1.1
Page 4 of 4
Established : 2010-02-12
Revised
: 2013-05-23
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