ON NRVTS260ESFT3G Very low forward voltage trench-based schottky rectifier Datasheet

NTS260ESF, NRVTS260ESF
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
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• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
TRENCH SCHOTTKY
RECTIFIER
2.0 AMPERES
60 VOLTS
SOD−123FL
CASE 498
PLASTIC
Mechanical Characteristics:
•
•
•
•
•
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 11.7 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
MSL 1
MARKING DIAGRAM
AACMG
G
Typical Applications
• Switching Power Supplies including Compact Adapters and Flat
•
•
•
•
Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
AAC
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
NTS260ESFT3G
SOD−123FL
(Pb−Free)
10,000/
Tape & Reel
NRVTS260ESFT3G
SOD−123FL
(Pb−Free)
10,000/
Tape & Reel
NTS260ESFT1G
SOD−123FL
(Pb−Free)
3,000/
Tape & Reel
NRVTS260ESFT1G
SOD−123FL
(Pb−Free)
3,000/
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 1
1
Publication Order Number:
NTS260ESF/D
NTS260ESF, NRVTS260ESF
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
60
V
IO
2.0
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TL = TBD°C)
IFRM
4.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
25
A
Tstg, TJ
−65 to +175
°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = TBD°C)
Storage and Operating Junction Temperature Range (Note 1)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
YJCL
24.4
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
85
°C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
RqJA
330
°C/W
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 1.0 A, TJ = 25°C)
(IF = 2.0 A, TJ = 25°C)
(IF = 1.0 A, TJ = 125°C)
(IF = 2.0 A, TJ = 125°C)
VF
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
V
0.55
0.65
0.47
0.58
12
3
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
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2
NTS260ESF, NRVTS260ESF
TYPICAL CHARACTERISTICS
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 175°C
TA = 150°C
10
TA = 125°C
1
TA = 85°C
TA = 25°C
TA = −55°C
0.1
0.3
0.5
0.7
0.9
1.3
1.1
1
TA = 85°C
TA = 25°C
TA = −55°C
0.2
1.5
0.6
0.4
0.8
1.4
1.2
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.6
1.E−01
1.E−01
1.E−02
TA = 150°C
1.E−04
TA = 125°C
1.E−05
TA = 85°C
1.E−06
TA = 175°C
1.E−02
TA = 175°C
1.E−03
TA = 150°C
1.E−03
TA = 125°C
1.E−04
TA = 85°C
1.E−05
TA = 25°C
1.E−06
TA = 25°C
1.E−07
1.E−07
10
20
30
50
40
60
10
20
30
40
50
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
C, JUNCTION CAPACITANCE (pF)
TA = 150°C
TA = 125°C
IR, INSTANTANEOUS REVERSE CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
0.1
TA = 175°C
10
0.1
IF(AV), AVERAGE FORWARD CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TJ = 25°C
100
10
0.1
1
10
4
DC
RqJL = 24.4°C/W
3
SQUARE WAVE
2
1
0
0 10 20 30 40 50 60 70 80 90100110120130140150160170
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
60
NTS260ESF, NRVTS260ESF
PACKAGE DIMENSIONS
SOD−123FL
CASE 498
ISSUE D
q
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION
OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.
D
1
2
DIM
A
A1
b
c
D
E
L
HE
q
A1
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
END VIEW
TOP VIEW
q
HE
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
MILLIMETERS
NOM
MAX
0.95
0.98
0.05
0.10
0.90
1.10
0.15
0.20
1.65
1.80
2.70
2.90
0.75
0.95
3.60
3.80
8°
−
SIDE VIEW
2X
L
b
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
RECOMMENDED
SOLDERING FOOTPRINT*
c
2X
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
2X
1.22
BOTTOM VIEW
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
4.20
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
2X
1.25
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
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NTS260ESF/D
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