UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 DESCRIPTION 2 The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-23 3 2 1 SOT-323 ORDERING INFORMATION Normal MMBT4401-AE3-R MMBT4401-AL3-R Ordering Number Lead Free MMBT4401L-AE3-R MMBT4401L-AL3-R Halogen Free MMBT4401G-AE3-R MMBT4401G-AL3-R Package SOT-23 SOT-323 Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel MARKING www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R206-035.F MMBT4401 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified) (Note) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 600 mA Total Device Dissipation 350 mW PD Derate above 25℃ 2.8 mW/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA (Ta=25°C, unless otherwise specified) CHARACTERISTIC Junction to Ambient SYMBOL θJA RATING 357 UNIT °C /W ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO IC=0.1mA, IE=0 60 Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA, IB=0 40 Emitter-Base Breakdown Voltage BVEBO IE=0.1mA, IC=0 6 Collector Cut-off Current ICEX VCE=35V, VEB=0.4V Base Cut-off Current IBL VCE=35V, VEB=0.4V ON CHARACTERISTICS (note) hFE1 VCE=1V, IC=0.1mA 20 hFE2 VCE=1V, IC=1mA 40 hFE3 VCE=1V, IC=10mA 80 DC Current Gain hFE4 VCE=1V, IC=150mA 100 VCE=2V, IC=500mA 40 hFE5 VCE(SAT1) IC=150mA, IB=15mA Collector-Emitter Saturation Voltage VCE(SAT2) IC=500mA, IB=50mA VBE(SAT1) IC=150mA, IB=15mA Base-Emitter Saturation Voltage 0.75 VBE(SAT2) IC=500mA, IB=50mA SMALL SIGNAL CHARACTERISTICS1 Current Gain Bandwidth Product fT VCE=10V, IC=20mA, f=100MHz 250 Collector-Base Capacitance Ccb VCB=5V, IE=0, f=140kHz Emitter-Base Capacitance Ceb VBE=0.5V, IC=0, f=140kHz Input Impedance hie VCE=10V, IC=1mA, f=1kHz 1 Voltage Feedback Ratio hre VCE=10V, IC=1mA, f=1kHz 0.1 Small-Signal Current Gain hfe VCE=10V, IC=1mA, f=1kHz 40 Output Admittance hoe VCE=10V, IC=1mA, f=1kHz 1 SWITCHING CHARACTERISTICS VCC=30V, VEB=2V Delay Time tD IC=150mA IB1=15mA VCC=30V, VEB=2V Rise Time tR IC=150mA IB1=15mA Storage Time tS VCC=30V, IC=150mA Fall Time tF IB1= IB2=15mA Note: Pulse test: PulseWidth≤300μs, Duty Cycle≤2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT V V V µA µA 300 0.4 0.75 0.95 1.2 V V V V MHz pF pF kΩ ×10-4 6.5 30 15 8 500 30 µmhos 15 ns 20 ns 225 ns 30 ns 2 of 6 QW-R206-035.F MMBT4401 NPN SILICON TRANSISTOR TEST CIRCUIT -1.5V 6V 1k Note:BVEBO=5V 30V 0 ≤220ns 37Ω 1KΩ 50Ω Figure2. Saturated Turn-Off Switching Timer UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R206-035.F MMBT4401 VCE =5V 400 300 200 100 125 C 25 C -40 C 0 0.1 0.3 1 3 10 30 100 300 Collector Current, IC (mA) Collector-Emitter Voltage, VCESAT (V) 500 Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.4 β=10 0.3 125 C 0.2 25 C 0.1 -40 C 1 10 100 Collector Current, IC (mA) 500 Base-Emitter OnVoltage, VBEON (V) Typical Pulsed Current Gain, hFE TYPICAL CHARACTERISTICS Base-Emitter Voltage, VBESAT (V) NPN SILICON TRANSISTOR 500 Collector-Cutoff Current vs Ambient Temperature 100 VCB=40V 10 Emitter Transition and Output Capacitance vs Reverse Bias Voltage 20 f=1MHz 16 Cte 12 1 8 0.1 Cob 4 25 50 75 100 125 150 Ambient Temperature, TA(℃) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.1 1 10 Reverse Bias Voltage (V) 100 4 of 6 QW-R206-035.F MMBT4401 TYPICAL CHARACTERISTICS(Cont.) 400 Turn On and Turn Off Times vs Collector Current 320 IB1=IB2= 320 Time (ns) Time (ns) 240 160 240 tS 160 80 toff tF tR tD ton 0 10 100 1000 Collector Current, IC (mA) 100 1000 Collector Current, IC (mA) Char.Relative To Voltage at VCE=10V Power Dissipation, PD (W) Char.Relative To Voltage At IC=10mA 0 10 IC 10 VCC =25V VCC =25V 80 Switching Times vs Collector Current 400 IC IB1=IB2= 10 Char.Relative To Voltage at TA=25℃ NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R206-035.F MMBT4401 TYPICAL CHARACTERISTICS(Cont.) IC, Collector Current (mA) NPN SILICON TRANSISTOR 1400 1200 1000 800 600 400 200 100 80 60 40 20 0 S.O.A 1mS 1S 20 40 50 30 10 VCE, Collector-Emitter Voltage (Volts) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R206-035.F