® MUR820CTR thru MUR860CTR Pb MUR820CTR/MUR840CTR/MUR860CTR Pb Free Plating Product 8 Ampere Heatsink Dual Common Anode Fast Recovery Half Bridge Rectifiers TO-220AB Features Latest GPP technology with super fast recovery time Low forward voltage drop High current capability Low reverse leakage current High surge current capability Unit:mm 9.90±0.20 0 .2 ±0 0 .6 4.50±0.20 13.08±0.20 Mechanical Data Case: Heatsink TO-220AB/TO-220CE Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.0 gram approximately 6.50±0.20 9.19±0.20 Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,Motor Control and UPS Car Audio Amplifiers and Sound Device Systems 1.30±0.20 2.40±0.20 1.27±0.20 1.52±0.20 3.02±0.20 Application 2.80±0.20 15.70±0.20 φ3 0.80±0.20 2.54typ 2.54typ 0.50±0.20 Case Case Negative Positive Common Cathode Common Anode Suffix "CT" Suffix "CTR" Case Doubler Tandem Polarity Suffix "CTD" Case Series Tandem Polarity Suffix "CTS" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. o SYMBOL MUR820CTR MUR840CTR MUR860CTR UNIT Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V Maximum RMS Voltage VRMS 140 280 420 V VDC 200 400 600 V Maximum DC Blocking Voltage Maximum Average Forward Rectified o Current TC=100 C IF(AV) 8.0 A IFSM 100 A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 4.0 A VF 0.98 o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR 1.3 5.0 uA uA nS Trr 35 Typical junction Capacitance (Note 2) CJ 65 Typical Thermal Resistance (Note 3) Temperature Range V 100 Maximum Reverse Recovery Time (Note 1) Operating Junction and Storage 1.7 R JC 2.2 TJ, TSTG -55 to +150 pF o C/W o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. Rev.06 © 1995 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com.tw/ ® MUR820CTR thru MUR860CTR FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 8 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 100 60 Hz Resistive or Inductive load 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 80 60 40 20 0 0 50 100 150 1 CASE TEMPERATURE, C 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 40 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 NUMBER OF CYCLES AT 60Hz o MUR820CTR MUR840CTR 4 MUR860CTR 1 o TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Rev.06 © 1995 Thinki Semiconductor Co., Ltd. Page 2/2 http://www.thinkisemi.com.tw/