CHA5115-99F RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 29dBm output power associated to 39% power added efficiency at 3dB gain compression. This device is manufactured using 0.25µm Power pHEMT process, including, via holes through the substrate and air bridges. It is available in chip form. Vg Vd1 IN Main Features OUT 44 Pout (dBm) & PAE(%) & Gain(dB) Vd2 0.25µm Power pHEMT Technology Frequency band: 8-12GHz Output power: 29dBm @ 3dBcomp Linear gain: 25dB High PAE: 39% @ 3dBcomp Noise Factor: 5dB typ. Quiescent bias point: Vd=8V, Id=0.19A Chip size: 2.37x1.82x0.07mm PAE @ 3dB comp 42 40 38 36 34 32 Pout @ 3dB comp 30 28 26 Linear Gain 24 22 20 8.0 8.5 9.0 9.5 10.0 10.5 Frequency (GHz) 11.0 11.5 12.0 Main Characteristics Tamb =+25°C, Vd =8V, Id (Quiescent) =190mA, Drain Pulse width =100µs, Duty cycle = 20% Symbol Parameter Min Typ Max Unit Fop Operating frequency range 12 GHz 8 PAE_P-3dB Power added efficiency @ 3dB comp 39 % P-3dB Output power @ 3dB comp 29 dBm Ref. : DSCHA51154120 - 30 Apr 14 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5115-99F X-band Medium Power Amplifier Main Characteristics on wafer Tamb =+25°C, Vd =8V, Drain Pulse width =100µs, Duty cycle = 20% Symbol Parameter Fop Operating frequency G Small signal gain RLin Input Return Loss RLout Output Return Loss P-1dB Ouput power @ 1dBcomp P-3dB Output power @ 3dBcomp PAE_ P-3dB Power Added Efficiency @3dB comp Id_ P-3dB Supply drain current @3dB comp NF Noise Factor Vd1, Vd2, Vd3 Drain supply voltage Id Supply quiescent current (1) Vg Gate supply voltage (1) Parameter can be adjusted by tuning of Vg. Min 8 Typ 25 10 8 28 29 39 250 5 8 190 -1 Max 12 Unit GHz dB dB dB dBm dBm % mA dB V mA V Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit (2) Cmp Compression level 6 dB (3) Vd Supply voltage 9.5 V Id Supply quiescent current 240 mA Id_sat Supply current in saturation 320 mA Vg Supply voltage -0.6 V Tj Maximum junction temperature 175 °C Tstg Storage temperature range -55 to +150 °C Top Operating temperature range -40 to +85 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) For higher compression the level limit can be increased by decreasing the voltage Vd using the rate 0.5V/dBcomp. (3) Without RF input power. Ref. : DSCHA51154120 - 30 Apr 14 2/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5115-99F X-band Medium Power Amplifier Typical on Jig Measurements Tamb= -40°C/+25°C/+85°C; Vd =8V, Id (Quiescent) =190mA, Drain Pulse width =100µs, Duty cycle =20% Linear Gain versus frequency 30 29 28 -40 C 27 Linear Gain (dB) 26 25 +25 C 24 23 +85 C 22 21 20 19 18 8.0 8.5 9.0 9.5 10.0 10.5 Frequency (GHz) 11.0 11.5 12.0 Output Power @ 1dB comp versus frequency 34 33 32 31 Pout (dBm) -40 C 30 +25 C 29 +85 C 28 27 26 25 24 8.0 8.5 Ref. : DSCHA51154120 - 30 Apr 14 9.0 9.5 10.0 10.5 Frequency (GHz) 3/10 11.0 11.5 12.0 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5115-99F X-band Medium Power Amplifier Typical on Jig Measurements Tamb= -40°C/+25°C/+85°C; Vd =8V, Id (Quiescent) =190mA, Drain Pulse width =100µs, Duty cycle =20% Output Power @ 3dB comp versus frequency 34 33 32 31 Pout (dBm) -40 C 30 +25 C 29 +85 C 28 27 26 25 24 8.0 8.5 9.0 9.5 10.0 10.5 Frequency (GHz) 11.0 11.5 12.0 Power added efficiency @ 3dBcomp versus frequency 48 46 -40 C 44 +25 C 42 +85 C PAE (%) 40 38 36 34 32 30 28 8.0 8.5 Ref. : DSCHA51154120 - 30 Apr 14 9.0 9.5 10.0 10.5 Frequency (GHz) 4/10 11.0 11.5 12.0 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5115-99F X-band Medium Power Amplifier Typical on Jig Measurements Tamb= -40°C/+25°C/+85°C; Vd =8V, Id (Quiescent) =190mA, Drain Pulse width =100µs, Duty cycle =20% Drain Current @ 3dBcomp versus frequency 0.50 0.45 0.40 0.35 -40 C Id (A) 0.30 +25 C 0.25 +85 C 0.20 0.15 0.10 0.05 0.00 8.0 8.5 Ref. : DSCHA51154120 - 30 Apr 14 9.0 9.5 10.0 10.5 Frequency (GHz) 5/10 11.0 11.5 12.0 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5115-99F X-band Medium Power Amplifier Mechanical data 1 12 All dimensions are in micrometers Chip size = 1820x2370 ±35µm Chip thickness = 70µm ±10µm RF pads (1, 12) = 100 x 122µm² DC pads (3, 6, 8, 11) = 100 x 100µm² Chip width and length are given with a tolerance of ±35µm Pin number 1 2, 4, 8, 9 3 5, 7, 10 6, 11 12 Ref. : DSCHA51154120 - 30 Apr 14 Pin name IN VSS, VG1B, VG2A, VG2B VG1A GND VD1, VD2 OUT 6/10 Description Input RF NC Vg Ground Vd Output RF Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5115-99F X-band Medium Power Amplifier Recommended assembly plan Pads VG1A (pin 3) & VG2A (pin 8) are connected inside the chip, so the CHA5115 can be used without VG2A bias. Equivalent RF Wire Bonding: 0.2nH (typical length of 200µm for a 25µm diameter wire). Bonding recommendations Port IN OUT Connection External capacitor Inductance (Lbonding) = 0.3nH 1 gold wire with diameter of 25µm Inductance (Lbonding) = 0.3nH 1 gold wire with diameter of 25µm Vg Inductance 1nH C1 ~ 120pF, C2 ~ 10nF Vd Inductance 1nH C1 ~ 120pF Ref. : DSCHA51154120 - 30 Apr 14 7/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5115-99F X-band Medium Power Amplifier DC Schematic Medium Power Amplifier: 8V, 190mA VSS VG1A VG1B GND VD1 GND VG2A VG2B GND VD2 OUT IN Ref. : DSCHA51154120 - 30 Apr 14 8/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5115-99F X-band Medium Power Amplifier Notes Ref. : DSCHA51154120 - 30 Apr 14 9/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5115-99F X-band Medium Power Amplifier Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Ordering Information Chip form: CHA5115-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA51154120 - 30 Apr 14 10/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34