UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in energy-saving light, electronic ballast, high frequency switching power supply, high frequency power transform or common power amplifier, etc. FEATURES * High Breakdown Voltage * High Current Capability * High Switching Speed * High Reliability * RoHS-Compliant Product INTERNAL SCHEMATIC DIAGRAM ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13005DL-K-x-TM3-T MJE13005DG-K-x-TM3-T Package TO-251 Pin Assignment 1 2 3 B C E Packing Tube MJE13005DL-K-x-TM3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TM3: TO-251 (3)Rank (3) x: refer to Classification of hFE1 (4)Lead Free (4) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R213-021.b MJE13005D-K Preliminary NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified) PARAMETER Collector- Emitter Voltage (VBE =0) Collector-Emitter Voltage (IB =0) Emitter-Base Voltage SYMBOL RATING UNIT VCES 700 V VCEO 400 V VEBO 9 V 4 A DC IC Collector Current Pulse ICP 8 A 2 A DC IB Base Current Pulse IBP 4 A Power Dissipation PD 44 W Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS PARAMETER Collector-Emitter Breakdown Voltage Collector -Base Breakdown Voltage Emitter-Base Breakdown Voltage Collect Cut-off Current Collect Cut-off Current Emitter Cut-off Current DC Current Gain SYMBOL BVCEO BVCBO BVEBO ICBO ICEO IEBO hFE1 hFE2 Collector-Emitter Saturation Voltage VCE Base-Emitter Saturation Voltage Fall Time Resistive Load Storage Time Current Gain Bandwidth Product Diode Forward Voltage VBE(SAT) tF tS fT VF RATING 100 2.87 TEST CONDITIONS IC=10mA, IB=0 IC=1mA, IB=0 IE =1mA, IC=0 VCB=700V, IE=0 VCE=400V,IB=0 VEB=9V, IC=0 VCE =5V, IC=500mA VCE =5V, IC=2A IC=1A, IB=0.2A IC=2A, IB=0.5A IC=4A, IB=1A IC=2A, IB=0.5A, TC=100°C IC=2A, IB=0.5A MIN 400 700 9 15 5 MAX UNIT V V V 100 μA 50 μA 10 μA 50 0.5 0.6 1 1 1.6 0.7 4 VCC=24V, IC=2A, IB1=-IB2=0.4A VCE=10V, IC=0.5A IF=1A TYP 4 1.5 V V μs μs MHZ V CLASSIFICATION OF hFE1 RANK RANGE A 15 ~ 20 B 20 ~ 25 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw C 25 ~ 30 D 30 ~ 40 E 40 ~ 50 2 of 3 QW-R213-021.b MJE13005D-K Preliminary NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R213-021.b