ON NSP8814MUTAG Transient voltage suppressor Datasheet

NSP8814, NSP8818
Transient Voltage
Suppressors
Low Capacitance Surge Protection for
High Speed Data
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The NSP8814 and NSP8818 transient voltage suppressors are
designed specifically to protect 10/100 and GbE Ethernet signals from
high levels of surge current. Low clamping voltage under high surge
conditions make this device an ideal solution for protecting voltage
sensitive lines leading to Ethernet transceiver chips. Low capacitance
combined with flow-through style packaging allows for easy PCB
layout and matched trace lengths necessary to maintain consistent
impedance between high-speed differential lines. The integrated 4 and
8 lines of protection in flow-thru type packages offer a simplified
solution with premier performance for 10/100 and GbE Ethernet
applications.
MARKING
DIAGRAMS
UDFN8
CASE 506CV
4D M
G
UDFN10
CASE 506CU
Features
• Protection for the Following IEC Standards:
•
•
•
•
4C M
G
IEC 61000−4−2 (ESD) ±30 kV (Contact)
IEC61000−4−5 (Lightning) 35 A (8/20 ms)
Flow−Thru Routing Scheme
2 pF Max, I/O to I/O
UL Flammability Rating of 94 V−0
This is a Pb−Free Device
XX = Specific Device Code
M = Date Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NSP8814MUTAG
UDFN8
(Pb−Free)
3000 / Tape & Reel
NSP8818MUTAG
UDFN10
(Pb−Free)
3000 / Tape & Reel
Typical Applications
• 10/100 and GbE Ethernet
• MagJacks® / Integrated Magnetics
• Notebooks/Desktops/Servers
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Operating Junction Temperature Range
TJ
−55 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Lead Solder Temperature −
Maximum (10 Seconds)
TL
260
°C
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
ESD
±30
±30
kV
kV
Maximum Peak Pulse Current
8/20 ms @ TA = 25°C
10/700 ms @ TA = 25°C
IPP
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
A
35
20
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of survivability specs.
© Semiconductor Components Industries, LLC, 2017
February, 2017 − Rev. 0
1
Publication Order Number:
NSP8814/D
NSP8814, NSP8818
NSP8814
GND
I/O
I/O
Pin2 Pin3 Pin6 Pin7
GND
GND
I/O
I/O
GND
GND
GND
Pins 1, 4, 5, 8
Note: Common GND – Only minimum of 1 GND connection required
NSP8818
GND
I/O
I/O
=
I/O
GND
GND
GND
I/O
I/O
I/O
Pin1 Pin2 Pin4 Pin5 Pin6 Pin7 Pin9 Pin10
I/O
Pins 3, 8
Note: Common GND – Only minimum of 1 GND connection required
I/O
GND
Figure 1. Pin Schematic
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
Parameter
Symbol
VRWM
IR
VBR
IT
IPP
Working Peak Voltage
RDYN
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
VCL VBR VRWM
V
IR
IT
Test Current
VHOLD
Holding Reverse Voltage
IHOLD
Holding Reverse Current
RDYN
Dynamic Resistance
VCL
RDYN
IPP
Maximum Peak Pulse Current
VC
Clamping Voltage @ IPP
VC = VHOLD + (IPP * RDYN)
IPP
Uni−Directional Surge Protection
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Reverse Working Voltage
VRWM
Forward Voltage
Breakdown Voltage
VF
VBR
Conditions
Min
Typ
Max
Unit
3.0
V
V
Any I/O to GND (Note 1)
IF = 10 mA, GND to All IO Pins
0.5
0.85
1.1
IT = 1 mA, I/O to GND
3.2
3.5
5.0
V
Reverse Leakage Current
IR
VRWM = 3.0 V, I/O to GND
0.5
mA
Clamping Voltage
VC
IPP = 1 A, Any I/O to GND (8/20 ms pulse)
5.0
V
Clamping Voltage
VC
IPP = 10 A, Any I/O to GND (8/20 ms pulse)
6.0
V
Clamping Voltage
VC
IPP = 25 A, Any I/O to GND (8/20 ms pulse)
10
V
Clamping Voltage
VC
IPP = 35 A, Any I/O to GND (8/20 ms pulse)
15
V
Clamping Voltage
VC
IEC61000−4−2, ±8 kV Contact
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz between I/O Pins
2.0
pF
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz between I/O Pins and GND
5.0
pF
See Figures 7 and 8
1.5
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater
than the DC or continuous peak operating voltage level.
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2
Peak
Value
100
20
tr = rise time to peak value [8 ms]
tf = decay time to half value [20 ms]
18
16
IO−IO
14
Vpk (V)
Ipp - PEAK PULSE CURRENT - %Ipp
NSP8814, NSP8818
Half Value
50
12
10
8
IO−GND
6
4
2
0
0 tr
0
tf
0
5
10
15
20
Ipk (A)
TIME (ms)
Figure 2. IEC61000−4−5 8/20 ms Pulse
Waveform
25
30
35
Figure 3. Clamping Voltage vs. Peak Pulse Current
(tp = 8/20 ms per Figure 2)
Peak
Value
100
18
16
14
Vpk (V)
Ipp - PEAK PULSE CURRENT - %Ipp
20
tr = rise time to peak value [10 ms]
tf = decay time to half value [700 ms]
Half Value
50
12
IO−IO
10
8
6
IO−GND
4
2
0
0
0 tr
tf
0
2
4
6
TIME (ms)
90
14
16
18
20
10
80
0
70
−10
60
−20
VOLTAGE (V)
VOLTAGE (V)
10 12
Ipk (A)
Figure 5. Clamping Voltage vs. Peak Pulse Current
(tp = 10/700 ms per Figure 4)
Figure 4. IEC61000−4−5 10/700 ms Pulse
Waveform
50
40
30
20
−30
−40
−50
−60
10
−70
0
−80
−10
−20
8
0
20
40
60
80
TIME (ns)
100
120
−90
−20
140
Figure 6. IEC61000−2−4 +8 kV Contact
Clamping Voltage
0
20
40
60
80
TIME (ns)
100
120
Figure 7. IEC61000−2−4 −8 kV Contact
Clamping Voltage
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3
140
1.E−01
5.0
1.E−02
4.5
1.E−03
4.0
1.E−04
3.5
1.E−05
3.0
C (pF)
I (A)
NSP8814, NSP8818
1.E−06
1.E−07
1.E−08
2.5
2.0
IO−IO
1.5
1.E−09
1.0
1.E−10
0.5
1.E−11
1.E−12
−2
IO−GND
0
−1
0
1
2
V (V)
3
4
5
6
0
Figure 8. IV Characteristics
0.5
1.0
1.5
2.0
VBias (V)
2.5
3.0
Figure 9. CV Characteristics
IO−GND
IO−GND
Figure 10. RF Insertion Loss
Figure 11. Capacitance Over Frequency
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4
3.5
NSP8814, NSP8818
1
2
3
NSP8814
RJ−45
Connector
4
5
6
DFN8
7
8
Black = Top Layer
Red = Other Layer
Figure 12. 10/100 Ethernet Layout Diagram and Flow−thru Routing Scheme
1
2
NSP8818
3
5
6
DFN10
7
8
Black = Top Layer
Red = Other Layer
Figure 13. GbE Ethernet Layout Diagram and Flow−thru Routing Scheme
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5
RJ−45
Connector
4
NSP8814, NSP8818
PACKAGE DIMENSIONS
UDFN8 2.2x2, 0.575P
CASE 506CV
ISSUE A
PIN ONE
REFERENCE
0.10 C
2X
ÇÇÇ
ÇÇÇ
0.10 C
2X
L
A B
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.25 MM FROM TERMINAL TIP.
L1
DETAIL A
E
ALTERNATE TERMINAL
CONSTRUCTION
ÉÉÉ
ÇÇÇ
EXPOSED Cu
TOP VIEW
DETAIL B
A
(A3)
0.05 C
MOLD CMPD
ÉÉ
ÇÇ
ÇÇ
A3
A1
DETAIL B
9X
ALTERNATE
CONSTRUCTIONS
0.05 C
A1
SIDE VIEW
C
SEATING
PLANE
RECOMMENDED
MOUNTING FOOTPRINT
E3
e
0.575
10X
e2
DETAIL A
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.127 REF
0.15
0.25
2.20 BSC
2.00 BSC
0.20 BSC
0.575 BSC
0.40 BSC
0.25
0.35
0.05
0.15
0.95
1.05
DIM
A
A1
A3
b
D
E
E3
e
e2
L
L1
L2
1
4
b
0.40
0.10
M
C A B
0.05
M
C
0.20
PACKAGE
OUTLINE
NOTE 3
2.30
8X
2X
L2
8
L
4X
5
e2
1
6X
0.22
0.575
0.20
e
E3
BOTTOM VIEW
0.50
0.40
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
6
NSP8814, NSP8818
PACKAGE DIMENSIONS
UDFN10 3.5x2, 0.575P
CASE 506CU
ISSUE O
PIN ONE
REFERENCE
0.10 C
2X
0.10 C
2X
L
A B
D
ÇÇÇ
ÇÇÇ
ÇÇÇ
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.25 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
L1
DETAIL A
E
ALTERNATE TERMINAL
CONSTRUCTION
ÉÉ
ÉÉ
ÇÇ
EXPOSED Cu
TOP VIEW
DETAIL B
A
(A3)
0.05 C
MOLD CMPD
13X
ÉÉ
ÉÉ
ÇÇ
A3
A1
DIM
A
A1
A3
b
D
E
e
e2
e3
L
L1
L2
DETAIL B
0.05 C
ALTERNATE
CONSTRUCTIONS
NOTE 4
A1
SIDE VIEW
C
SEATING
PLANE
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.127 REF
0.15
0.25
3.50 BSC
2.00 BSC
0.575 BSC
0.40 BSC
3.10 BSC
0.25
0.35
0.05
0.15
0.95
1.05
e3
RECOMMENDED
MOUNTING FOOTPRINT*
e
DETAIL A
1
e2
5
3.50
2X
10X
3X
L
L2
2X
10
0.40
0.31
8X
1.10
0.50 2.30
6
13X
e2
e
BOTTOM VIEW
b
0.10
M
C A B
0.05
M
C
PACKAGE
OUTLINE
NOTE 3
1
9X
6X
0.575
0.22
0.40
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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