TechnicalInformation IFF2400P17LE440988 Preliminarydata Generalinformation IPMfortypicalvoltagesupto690VRMS Ratedoutputcurrent1550ARMS Features - Integrated current, voltage and temperature measurement - Tvjop max=150°C - Real time Tvj simulation - IGBT4 technology - Smart protection - TIM and pressfit technology - Modbus interface - 100% tested IPM - ROHS compliant - Integrated chip current : 2400A - Integrated chio voltage: 1700V Topology half bridge Application Energy Storage, Smart Grid, Wind, Drives, Solar Heatsink water cooled Implemented sensors voltage, current, temperature Driver signals IGBT +15V Approvals UL61800-5-1 Sales - name IFF2400P17LE440988 preparedby:OW dateofpublication:2017-11-22 approvedby:YZ revision:2.1 1 TechnicalInformation IFF2400P17LE440988 Preliminarydata Absolutemaximumratedvalues Collector-emitter voltage IGBT; Tvj = 25°C VCES 1700 V VRRM 1700 V DC link voltage VDC 1450 V Peak switching current Ipeak 4000 A Repetitive peak reverse voltage Diode; Tvj = 25°C Insulation test voltage f = 50 Hz, t = 60 s VISOL 3.4 kVRMS Junction temperature under switching conditions Tvjop 150 °C Operational ambient temperature min. Tamb -40 °C Switching frequency operation values fsw2 10 kHz Notes Characteristicvalues Operationvalues min. Rated continuous current VDC = 1100 V, VAC = 690 VRMS, cos(ϕ) = 0.85, fAC sine = 50 Hz, fsw = 3000 Hz, Tinlet = 40°C, Tj ≤ 150 °C Power losses IAC = 1550 A, VDC = 1100 V, VAC = 690 VRMS, cos(ϕ) = 0.85, fAC sine = 50 Hz, fsw = 3000 Hz, Tinlet = 40 °C, Tj ≤ 150 °C Auxiliary power requirement 1550 ARMS Ploss 8900 W min. typ. max. 19.2 24 28.3 V Paux 48 W Vin low 2 V 16 V 2 V Vaux Vaux = 24 V Digital input level Vin high Digital output level max. 1 mA Interlock time default value Propagation delay for PWM default value 8.5 Vout low Vout high tinterlock Analog output for phase current for 1550A max. IAC Controllerinterface Auxiliary voltage typ. 13.5 15 16.5 V 4 µs tprop 4 µs VIac ana 3.69 V Iac trip 4200 A Over current shut down default value, response time 15 µs Analog DC link voltage sensor output load max 5 mA, @ 1100 V VDC ana 7.86 V Over voltage shut down default value, response time 500 µs Vdc trip 1340 V Chip over temperature shut down default value, response time 1000 µs Tvj trip 150 °C Analog ouput for junction temperature for 150°C VTvj ana 10 V Tpcb err 85 °C 19200 Bit/s PCB ambient over temperature default value, response time 1 s shut down Serial BUS Modbus, RS485 preparedby:OW dateofpublication:2017-11-22 approvedby:YZ revision:2.1 2 TechnicalInformation IFF2400P17LE440988 Preliminarydata Systemdata EMC robustness min. according to IEC61800 at named interfaces power VBurst control VBurst typ. max. 2 kV 2 kV Storage temperature Tstor -40 85 °C Operational ambient temperature Top amb -40 65 °C Stray inductance Lead resistance Impuls test voltage Power to logic side, acc .IEC 61800-5-1 Isolation test voltage RMS, f = 50 Hz, t = 60 s Creepage distance Power side to heatsink across housing Clearance Power side to heatsink LS 8.5 nH RCC EE 1.2 mΩ 12 kV VISOL Protection degree kV 13 mm 8 mm IP00 Pollution degree Dimensions 3.4 2 width x depth x height 215 Weight 338 115 6.1 mm kg Notes Partical discharge test, power side to logic side, according to IEC 61800-5-1, TE > 1920V Housing CTI > 175 Heatsinkwatercooled Water flow min. according to coolant specification from Infineon 15 ∆p 120 Water pressure Water pressure drop typ. ∆V/∆t 6 at 15 dm³/min water flow Coolant inlet temperature Tinlet Notes Cooling fluid = 48% water / 52% mone-ethylene glycol (MEG) preparedby:OW dateofpublication:2017-11-22 approvedby:YZ revision:2.1 3 -40 max. dm³/min 8 bar mbar 60 °C TechnicalInformation IFF2400P17LE440988 Preliminarydata output characteristic IGBT/Diode Tvj = 150°C 4800 switching losses, Eon, Eoff, Erec Vdc 1100V, Tvj = 150°C 6000 Vce sat Vf 4400 4000 E on E off E rec 5000 3600 4000 Looses [mJ] 3200 Ic [A] 2800 2400 2000 1600 3000 2000 1200 800 1000 400 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 0 1000 2000 Vce/Vf[V] safe operating area 400 4000 350 3500 5000 Pressure drop [mbar] 300 3000 Ic [A] 4000 Pressure drop vs. flow rate T inlet = 40°C, 52% water / 48% MEG 4500 2500 2000 1500 250 200 150 100 1000 50 500 0 3000 Ic [A] 0 200 400 600 800 1000 1200 0 1400 DC link voltage [V] preparedby:OW dateofpublication:2017-11-22 approvedby:YZ revision:2.1 0 5 10 15 Flow rate [l/min] 4 20 25 TechnicalInformation IFF2400P17LE440988 Preliminarydata Thermal resistence vs. Flow rate T inlet=40°C, 48% water/ 52% MEG 55 Rthja Diode-Diode Rthja IGBT-IGBT Rthja IGBT-Diode Rthja Diode-IGBT 50 45 40 Rthj [K/W] 35 30 25 20 15 10 5 0 0 5 10 15 20 25 Flowrate [l/min] preparedby:OW dateofpublication:2017-11-22 approvedby:YZ revision:2.1 5 TechnicalInformation IFF2400P17LE440988 Preliminarydata thermal impedance Tinlet =40°C, 48% water/52% MEG, 15l/min 0.040 0.035 0.030 Rth [K/W] 0.025 0.020 0.015 0.010 0.005 0.000 0.001 0.01 0.1 1 10 100 t [s] i: 1 2 3 4 5 6 7 ri[K/W]: 0.00115 0.00737 0.00818 0.0068 0.00975 0.0026 0.00045 τi[s]: 0.032 0.032 0.1165 0.625 2.615 12.1 40.84 Rthja Diode - Diode i: 1 2 3 4 5 6 ri[K/W]: -0.00085 0.00117 -0.00067 0.00595 0.00565 0.00218 τi[s]: 0.024 0.0313 0.084 1.29 3.25 13 Rthja IGBT - IGBT i: 1 2 3 4 5 ri[K/W]: -0.001 0.00035 0.00491 0.00605 0.00275 τi[s]: 0.166 0.26 1.025 2.765 7.695 Rthja IGB -Diode i: 1 2 3 4 5 6 ri[K/W]: 0.0008 0.0046 0.003565 0.006735 0.007075 0.0026 τi[s]: 0.0053 0.043 0.173 0.897 2.89 10.9 Rthja Diode-IGBT preparedby:OW dateofpublication:2017-11-22 approvedby:YZ revision:2.1 6 1000 TechnicalInformation IFF2400P17LE440988 Preliminarydata Mechanicaldrawing preparedby:OW dateofpublication:2017-11-22 approvedby:YZ revision:2.1 7 TechnicalInformation IFF2400P17LE440988 Preliminarydata Circuitdiagram preparedby:OW dateofpublication:2017-11-22 approvedby:YZ revision:2.1 8 TechnicalInformation IFF2400P17LE440988 Preliminarydata Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnical departmentswillhavetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct datawithrespecttosuchapplication. Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyis grantedexclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindforthe productanditscharacteristics. Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecific applicationofourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com,sales&contact). Forthosethatarespecificallyinterestedwemayprovideapplicationnotes. Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionplease contactthesalesoffice,whichisresponsibleforyou. ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,please notify.Pleasenote,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey, andthatwemaymakedeliverydependedontherealization ofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. SafetyInstructions Priortoinstallationandoperation,allsafetynoticesandwarningsandallwarningsignsattachedtotheequipmenthavetobe carefullyread.Makesurethatallwarningsignsremaininalegibleconditionandthatmissingordamagedsignsarereplaced.To installationandoperation,allsafetynoticesandwarningsandallwarningsignsattachedtotheequipmenthavetobecarefully read.Makesurethatallwarningsignsremaininalegibleconditionandthatmissingordamagedsignsarereplaced. preparedby:OW dateofpublication:2017-11-22 approvedby:YZ revision:2.1 9