Panasonic ON2152 Reflective photosensor Datasheet

Reflective Photosensors (Photo Reflectors)
CNZ2152 (ON2152)
Reflective photosensor
Non-contact point SW, object sensing
Unit: mm
3.2±0.2
■ Overview
• High sensitivity
Parameter
Input (Light Reverse voltage
emitting diode) Forward current
Power dissipation *1
Symbol
VR
IF
PD
Rating
3
100
150
Unit
V
mA
mW
Output (Photo Collector-emitter voltage
transistor)
(Base open)
VCEO
20
V
Emitter-collector voltage
(Base open)
VECO
3
V
Collector current
Collector power dissipation *2
Operating ambient temperature
Storage temperature
IC
PC
T opr
Tstg
30
150
−25 to +85
−30 to +100
mA
mW
°C
°C
Temperature
+0.1
+0.1
1.0(typ.)
φ2.2±0.2
+0.1
φ0.9 -0.2
4-φ0.45
7.0 min.
■ Applications
■ Absolute Maximum Ratings Ta = 25°C
1.0 -0.2
3.5±0.2
• High SN ratio
(10.0)
(2.54)
3
2
1: Cathode
2: Anode
3: Emitter
4
1
4: Collector
PRSTR104-001 Package
(Note) ( ) Dimension is reference
6.2±0.2
• Detection of paper, film and cloth • Optical mark reading
• Detection of coin and bill
• Detection of position and edge
• Start, end mark detection of magnetic tape
16.0±0.3
14.0 -0.2
10.0±0.2
• Fast response
8.0±0.2
CNZ2152 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
■ Features
Mark for
indicating
LED side
φ1.5
Note) *1: Input power derating ratio is
2.0 mW/°C at Ta ≥ 25°C.
*2: Output power derating ratio is
2.0 mW/°C at Ta ≥ 25°C.
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Input
Forward voltage
characteristics Reverse current
Symbol
Conditions
VF
IF = 100 mA
IR
VR = 5 V
Output
Collector-emitter cutoff current
characteristics (Base open)
ICEO
Transfer
Collector current *1
IC *2
characteristics
IC *3
Collector-emitter saturation voltage VCE(sat)
Rise time
tr
Fall time
tf
Min
VCE = 10 V
VCC = 5 V, IF = 20 mA, RL = 100 Ω
IF = 100 mA, IC = 1 mA
VCC = 10 V, IC = 1 mA, RL = 100 Ω
0.8
Typ
1.25
Max
1.50
10
Unit
V
µA
0.05
2.00
µA
0.6
mA
µA
V
µs
µs
3.0
500
8
8
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation
3. *1: Output current measurement circuit (Ambient light is shut off completely)
IC
VCC
d = 5 mm
RL
;;;
;
;;;;
IF
*2: White paper (reflective ratio 90%)
*3: Tracing paper (paper SM-1 for 2nd original paper)
Test Paper
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00052BED
1
CNZ2152
IF , IC  Ta
IF  V F
IF
Ta = 25°C
100
80
60
40
IC
20
IF = 100 mA
80
60
40
20
40
60
80
0
100
0
0.4
0.8
IC  I F
0.8
0.4
1.6
2.0
VCC = 5 V RL = 100 Ω
Ta = 25°C
(1) White paper
(Reflective ratio 90%)
(2) Tracing paper
(Paper SM-1 for 2nd
original paper)
(1)
(2)
10 −1
1
0
40
∆IC  Ta
160
IF = 100 mA
Ta = 25°C
60 mA
12
50 mA
40 mA
8
30 mA
20 mA
4
0
102
10
Forward current IF (mA)
0
4
8
12
16
20
VCC = 5 V
IF = 20 mA
RL = 100 Ω
120
80
40
0
−40
24
Collector-emitter voltage VCE (V)
ICEO  Ta
0
40
80
Ambient temperature Ta (°C)
tr  IC
IC  d
103
103
80
Ambient temperature Ta (°C)
80 mA
1
10 −2
10 −1
0
−40
2.4
IC  VCE
16
Collector current IC (mA)
Collector current IC (mA)
1.2
10 mA
16
VCC = 10 V
Ta = 25°C
VCC = 5 V
Ta = 25°C
IF = 20 mA
RL = 100 Ω
102
10
1
VCE = 25 V
10 V
RL = 1 kΩ
10
1
100 Ω
Sig. in
V1
50 Ω
0
40
80
Ambient temperature Ta (°C)
10 −1
10 −2
VCC
Sig. V1
out
V2 V2
RL
10 −1
10 −2
−40
Collector current IC (mA)
102
Rise time tr (µs)
Collector-emitter cutoff current (Base open) ICEO (µA)
50 mA
Forward voltage VF (V)
Relative collector current ∆IC (%)
0
Ambient temperature Ta (°C)
2
1.2
20
0
−25
10
1.6
Forward voltage VF (V)
100
102
VF  Ta
120
Forward current IF (mA)
Forward current IF , collector current IC (mA)
120
10 −1
tr
td
1
Collector current IC (mA)
SHG00052BED
12
d
Mirror
8
White paper
(Reflective ratio 90%)
4
90%
10%
tf
10
0
0
2
4
6
8
Distance d (mm)
10
12
Caution for Safety
■ This product contains Gallium Arsenide (GaAs).
DANGER
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal.
The product should be excluded form general industrial waste or
household garbage.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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