AP3D2R6CMT
Halogen-Free Product
Advanced Power
Electronics Corp.
ASYMMETRIC DUAL N-CHANNEL
ENHANCEMENT MODE POWER MOSFET
D1
▼ Simple Drive Requirement
▼ Easy for DC/DC Buck
CH-1
G1
Converter Application
▼ RoHS Compliant & Halogen-Free
CH-2
D2/S1
BVDSS
30V
RDS(ON)
8.2mΩ
BVDSS
RDS(ON)
30V
2.4mΩ
G2
Description
S2
Advanced Power MOSFETs from APEC provide
the designer with the best combination of fast
switching, ruggedized device design, low onresistance and cost-effectiveness.
D2/S1
G2
G2
D2/S1
D2/S1
D2/S1
S2
The control MOSFET (CH-1) and synchronous
MOSFET (CH-2) co-package for synchronous buck
converters. The package provide optimal efficiency
with low stray inductance and very low onresistance.
G1
D2/S1
D1
D1
D1
G1 D2/S1 D1 D1
.
PMPAK® 5x6
PMPAK 5x6
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Units
Rating
CH-1
CH-2
VDS
Drain-Source Voltage
30
30
V
VGS
Gate-Source Voltage
+20 / -12
+20 / -12
V
ID@TC=25℃
Drain Current (Silicon Limited)
42
100
A
3
ID@TA=25℃
Drain Current , VGS @ 10V
12.2
24.3
A
ID@TA=70℃
3
9.8
19.4
A
40
75
A
2.08
2.27
W
Drain Current , VGS @ 10V
Pulsed Drain Current
IDM
1
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rating
Parameter
CH-1
CH-2
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
5
3
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
60
55
℃/W
Rthj-a
4
130
120
℃/W
Maximum Thermal Resistance, Junction-ambient
1
201803021
AP3D2R6CMT
CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=14A
-
-
8.2
mΩ
VGS=4.5V, ID=7A
-
-
13
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
2.5
V
gfs
Forward Transconductance
VDS=5V, ID=14A
-
33
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
100
nA
Qg
Total Gate Charge
ID=7A
-
7
11.2
nC
Qgs
Gate-Source Charge
VDS=15V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
1
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
9
-
ns
ID=14A
-
48
-
ns
tr
td(off)
Turn-off Delay Time
RG=3Ω
-
17
-
ns
tf
Fall Time
VGS=10V
-
2
-
ns
Ciss
Input Capacitance
VGS=0V
-
1200 1920
pF
Coss
Output Capacitance
VDS=15V
Crss
Rg
-
270
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
10
-
pF
Gate Resistance
f=1.0MHz
-
1
2
Ω
Min.
Typ.
IS=14A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=14A, VGS=0V
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9
-
nC
2
AP3D2R6CMT
o
CH-2 Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=20A
-
-
2.4
mΩ
VGS=4.5V, ID=12A
-
-
3
mΩ
1.1
-
2.5
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
Max. Units
gfs
Forward Transconductance
VDS=5V, ID=20A
-
86
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
100
nA
Qg
Total Gate Charge
ID=12A
-
30
48
nC
Qgs
Gate-Source Charge
VDS=15V
-
11
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6.5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
11
-
ns
tr
Rise Time
ID=20A
-
64
-
ns
td(off)
Turn-off Delay Time
RG=3Ω
-
50
-
ns
tf
Fall Time
VGS=10V
-
14
-
ns
Ciss
Input Capacitance
VGS=0V
-
4300 6880
pF
Coss
Output Capacitance
VDS=15V
-
1050
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
34
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.7
3.4
Ω
Min.
Typ.
IS=20A, VGS=0V
-
-
1.2
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=20A, VGS=0V
-
35
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
29
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, on steady-state
4.Surface mounted on Min. copper pad of FR4 board, on steady-state
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP3D2R6CMT
Channel-1
40
30
10V
7.0V
6.0V
5.0V
V G =4.0V
ID , Drain Current (A)
30
10V
7.0V
6.0V
5.0V
V G =4.0V
o
T A =150 C
ID , Drain Current (A)
o
T A =25 C
20
20
10
10
0
0
0
0.4
0.8
1.2
1.6
2
0
0.4
0.8
1.2
1.6
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
16
I D =14A
V G =10V
I D =7A
T A =25 o C
12
.
10
Normalized RDS(ON)
RDS(ON) (mΩ)
14
1.6
1.2
0.8
8
0.4
6
2
4
6
8
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
14
I D = 250uA
12
1.6
8
Normalized VGS(th)
IS(A)
10
T j =25 o C
T j =150 o C
6
1.2
0.8
4
0.4
2
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP3D2R6CMT
Channel-1
8
f=1.0MHz
2000
1600
6
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =7A
V DS =15V
4
1200
800
2
400
C oss
C rss
0
0
0
4
8
12
1
16
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
33
37
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
ID (A)
10
.
1
100us
1ms
10ms
100ms
1s
DC
0.1
T A =25 o C
Single Pulse
Normalized Thermal Response (Rthja)
Duty factor = 0.5
Operation in this area
limited by RDS(ON)
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x R thja + T a
Rthja=130 oC/W
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
0.1
1
10
100
1000
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
20
V DS =5V
50
ID , Drain Current (A)
ID , Drain Current (A)
16
40
30
20
12
8
T j =150 o C
4
T j =25 o C
10
o
T j = -55 C
0
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Drain Current v.s. Ambient
Temperature
5
AP3D2R6CMT
Channel-2
80
80
10V
7.0V
6.0V
5.0V
V G =4.0V
60
40
20
60
40
20
0
0
0
0.4
0.8
1.2
1.6
2
0
0.4
0.8
1.2
1.6
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
2.6
I D =20A
V G =10V
I D =12A
T A =25 o C
1.8
.
Normalized RDS(ON)
1.6
2.2
RDS(ON) (mΩ)
10V
7.0V
6.0V
5.0V
V G =4.0V
o
T A =150 C
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 o C
1.2
0.8
1.4
0.4
1
2
4
6
8
-100
10
-50
0
50
100
150
T j , Junction Temperature (oC)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
20
I D = 250uA
16
Normalized VGS(th)
1.6
T j =25 o C
T j =150 o C
IS(A)
12
8
4
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP3D2R6CMT
Channel-2
f=1.0MHz
8
8000
6
6000
C (pF)
VGS , Gate to Source Voltage (V)
I D =12A
V DS =15V
4
2
C iss
4000
2000
C oss
C rss
0
0
0
10
20
30
40
50
60
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
33
37
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
ID (A)
10
100us
1ms
10ms
1
.
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
Normalized Thermal Response (Rthja)
Duty factor = 0.5
Operation in this area
limited by RDS(ON)
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x R thja + T a
Rthja=120 oC/W
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
0.1
1
10
100
1000
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
100
V DS =5V
24
ID , Drain Current (A)
ID , Drain Current (A)
80
60
40
T j =150 o C
o
T j =25 C
20
18
12
6
o
T j = -55 C
0
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Drain Current v.s. Ambient
Temperature
7
AP3D2R6CMT
MARKING INFORMATION
Part Number
3D2R6C
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
8