Diodes DMP2008UFG Qualified to aec-q101 standards for high reliability Datasheet

DMP2008UFG
20V P-CHANNEL ENHANCEMENT MODE MOSFET
®
POWERDI
RDS(ON) max
ID max
TA = +25°C
8mΩ @ VGS = -4.5V
-14A
V(BR)DSS
-20V
Features
•
Low RDS(ON) – ensures on state losses are minimized
•
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
•
9.8mΩ @ VGS = -2.5V
-10A
13mΩ @ VGS = -1.8V
-9.3A
17mΩ @ VGS = -1.5V
-8.3A
•
•
•
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
•
•
Mechanical Data
•
•
•
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish  Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
S
Pin 1
•
•
•
Load Switch
Power Management Functions
Drain
POWERDI3333-8
S
S
G
Gate
D
D
D
Source
D
Top View
Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMP2008UFG-7
DMP2008UFG-13
Notes:
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
ADVANCE INFORMATION
ADVANCE INFORMATION
Product Summary
S36 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
S36
POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 14 - 2
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August 2014
© Diodes Incorporated
DMP2008UFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
ADVANCE INFORMATION
Characteristic
Drain-Source Voltage
Gate-Source Voltage (Note 5)
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
TC = +25°C
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 8)
Avalanche Energy (Note 8)
Symbol
VDSS
VGSS
Value
-20
±8
Units
V
V
ID
-14
-11
-54
A
IDM
IS
IAS
EAS
-80
-2.2
-15
-113
A
A
A
mJ
Value
2.4
41
52
137
3.0
-55 to +150
Units
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
TA = +25°C
TC = +25°C
(Note 5)
(Note 6)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
PD
RΘJA
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
RΘJC
TJ, TSTG
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20
—
—
—
—
—
—
-1
±100
µA
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
|Yfs|
-0.4
—
—
—
—
—
—
—
—
—
—
42
-1.0
8
9.8
13
17
—
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
—
—
—
—
—
—
—
—
—
—
—
—
6909
635
563
2.5
72
40
8.6
14.5
22
33
291
124
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-0.7
-0.7
25
15
—
—
—
—
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -2.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
BODY DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
trr
Qrr
Notes:
V
nA
V
mΩ
S
Test Condition
VGS = 0V, ID = -250µA
VDS = -16V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -12A
VGS = -2.5V, ID = -10A
VGS = -1.8V, ID = -9.3A
VGS = -1.5V, ID = -8.3A
VDS = -5V, ID = -12A
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDD = -10V, ID = -12A
ns
VGS = -4.5V, VDD = -10V,
RG = 6Ω, ID = -12A
V
V
ns
nC
VGS = 0V, IS = -12A
VGS = 0V, IS = -2A
IF = -12A, di/dt = 100A/µs
IF = -12A, di/dt = 100A/µs
5. AEC-Q101 VGS maximum is ±6.4V.
6. RΘJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. RΘJC is guaranteed by design
while RΘJA is determined by the user’s board design.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8 .UIS in production with L = 1mH, TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 14 - 2
2 of 6
www.diodes.com
August 2014
© Diodes Incorporated
DMP2008UFG
50
30
VGS = 4.5V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
25
VDS = -5.0V
VGS = 2.5V
VGS = 2.0V
VGS = 1.8V
30
VGS = 1.5V
20
10
20
15
10
TA = 150 °C
TA = 125 °C
5
VGS = 1.2V
TA = 85°C
TA = 25°C
TA = -55° C
0
0.5
1.0
1.5
-VDS, DRAIN -SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.05
0.04
0.03
0.02
0.01
0
0
2.0
0
10
20
30
40
-ID, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
0.5
1.0
1.5
-V GS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2.0
0.030
0.025
0.020
ID = -12A
TA = 125°C
0.015
0.010
ID = -12A
TA = 25°C
0.005
50
0
1
5
6
7
3
4
2
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
8
2.2
0.020
2.0
VGS = -4.5V
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
R DS(ON),DRAIN-SOURCE ON-RESISTANCE (Ω)
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω)
ADVANCE INFORMATION
ADVANCE INFORMATION
40
0.016
0.012
TA = 125°C
0.008
TA = 150°C
TA = 85° C
TA = 25°C
TA = -55° C
0.004
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
-ID, DRAIN SOURCE CURRENT (A)
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
30
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( °C)
Fig. 6 On-Resistance Variation with Temperature
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DMP2008UFG
Document number: DS35694 Rev. 14 - 2
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VGS(TH), GATE THRESHOLD VOLTAGE(V)
RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.2
0.015
VGS = -2.5V
ID = -10A
0.010
VGS = -4.5V
ID = -12A
0.005
1.0
0.8
0.6
0.4
0.2
0
-50
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 7 On-Resistance Variation with Temperature
100,000
30
CT, JUNCTION CAPACITANCE (pF)
f = 1MHz
-IS, SOURCE CURRENT (A)
25
20
15
10
5
0
0
0.4
0.6
0.8
1.0
0.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
10,000
Ciss
1,000
Coss
Crss
100
1.2
0
20
RDS(on)
Limited
4.0
-ID, DRAIN CURRENT (A)
3.5
3.0
2.5
2.0
1.5
1.0
10
DC
1
PW = 10s
PW = 1s
0.1 TJ(max) = 150°C
PW = 100ms
PW = 10ms
PW = 1ms
PW = 100µs
TA = 25°C
VGS = -8V
Single Pulse
DUT on 1 * MRP Board
0.5
0
5
10
15
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
100
4.5
-VGS, GATE-SOURCE VOLTAGE (V)
ADVANCE INFORMATION
ADVANCE INFORMATION
DMP2008UFG
0.020
0
10
20
30
40
50
60
70
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
80
0.01
0.01
0.1
1
10
-V DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 14 - 2
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August 2014
© Diodes Incorporated
DMP2008UFG
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
ADVANCE INFORMATION
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
RθJA(t) = r(t) * RθJA
RθJA = 125°C/W
Duty Cycle, D = t1/ t2
D = 0.005
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
POWERDI3333-8
Dim Min Max Typ
D
3.25 3.35 3.30
E
3.25 3.35 3.30
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.203
−
−
b
0.27 0.37 0.32
b2
0.20
−
−
L
0.35 0.45 0.40
L1
0.39
−
−
e
0.65
−
−
Z
0.515
−
−
All Dimensions in mm
A
A3
A1
D
D2
L
(4x)
1
Pin 1 ID
4
b2
(4x)
E
E2
8
Z (4x)
5
e
L1
(3x)
b (8x)
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
G
Y2
Dimensions
C
G
G1
Y
Y1
Y2
Y3
X
X2
5
8
G1
Y1
Y
1
4
Y3
X2
C
Value (in mm)
0.650
0.230
0.420
3.700
2.250
1.850
0.700
2.370
0.420
POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 14 - 2
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August 2014
© Diodes Incorporated
DMP2008UFG
ADVANCE INFORMATION
ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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website, harmless against all damages.
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 14 - 2
6 of 6
www.diodes.com
August 2014
© Diodes Incorporated
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