Diodes DMP1011UCB9-7 P-channel enhancement mode mosfet Datasheet

DMP1011UCB9
P-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
INFORMATION
ADVANCED
ADVANCE INFORMATION
Product Summary (Typ. @ VGS = -4.5V, TA
Features
= +25°C)

VDSS
RDS(on)
Qg
Qgd
ID
-8V
8.2mΩ
8.1nC
1.8nC
-10A
Description
rd
This 3 generation Lateral MOSFET (LD-MOS) is engineered to
minimize on-state losses and switch ultra-fast, making it ideal for
high-efficiency power transfer. It uses Chip-Scale Package (CSP) to
increase power density by combining low thermal impedance with
minimal RDS(on) per footprint area.

LD-MOS Technology with the Lowest Figure of Merit:
-RDS(on) = 8.2mΩ to Minimize On-State Losses
-Qg = 8.1nC for Ultra-Fast Switching
Vgs(th) = -0.8V typ. for a Low Turn-On Potential






CSP with Footprint 1.5mm × 1.5mm
Height = 0.60mm for Low Profile
ESD = 6kV HBM Protection of Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Mechanical Data

DC-DC Converters

Case: U-WLB1515-9

Battery Management

Terminal Connections: See Diagram Below

Load Switch
U-WLB1515-9
Top-View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP1011UCB9-7
Notes:
Case
U-WLB1515-9
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-WLB1515-9
NX = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2012
Z
Jan
1
2013
A
Feb
2
DMP1011UCB9
Document number: DS37852 Rev. 2 - 2
Mar
3
2014
B
Apr
4
May
5
2015
C
Jun
6
1 of 6
www.diodes.com
2016
D
Jul
7
Aug
8
2017
E
Sep
9
Oct
O
2018
F
Nov
N
Dec
D
July 2015
© Diodes Incorporated
DMP1011UCB9
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
NEW PRODUCT
INFORMATION
ADVANCED
ADVANCE INFORMATION
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
ID
Steady
State
Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤1%)
Continuous Source Pin Current (Note 6)
Pulsed Source Pin Current (Pulse duration 10µs, duty cycle ≤1%)
Continuous Drain Current (Note 6) VGS = -4.5V
Value
-8
-6
-10
-8
A
-7.4
-6.0
-50
-2
-15
-0.5
ID
IDM
IS
ISM
IG
Continuous Gate Current
Units
V
V
A
A


A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
Value
0.89
1.57
+142.1
+80.5
-55 to +150
Units
W
W
°C/W
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Gate to Source Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
BVSGS
—
—
—
—
—
V
V
VGS = 0V, ID = -250μA
VDS = 0V, ID = -250μA
IDSS
-8
-6
—
-1
μA
VDS = -4.0V, VGS = 0V
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
IGSS
—
—
-100
nA
VGS = -4.0V, VDS = 0V
VGS(th)
-0.4
RDS (ON)
—
|Yfs|
VSD
Qrr
trr
—
—
—
—
-1.1
10
13
14
—
-1
—
—
V
Static Drain-Source On-Resistance
-0.8
8.2
10
11
16.8
-0.7
6.3
18.5
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2A
VGS = -3.0V, ID = -2A
VGS = -2.5V, ID = -2A
VDS = -4V, ID = -2A
VGS = 0V, IS = -2A
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
—
—
—
—
—
—
—
—
—
—
—
817
595
269
1.9
8.1
0.9
1.8
6.2
22.6
30.1
22.7
1,060
770
350
—
10.5
—
—
10
—
48
—
Zero Gate Voltage Drain Current
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
Reverse Recovery Charge
Reverse Recovery Time
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
@TC = +25°C
mΩ
S
V
nC
ns
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Vdd = -5V, IF = -2A,
di/dt = 200A/μs
VDS = -4V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = -4.5V, VDS = -4V,
ID = -2A
VDD = -4V, VGS = -4.5V,
IDS = -2A, RG = 10Ω,
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch2 (6.45cm2), 2oz (0.071mm thick) Cu.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP1011UCB9
Document number: DS37852 Rev. 2 - 2
2 of 6
www.diodes.com
July 2015
© Diodes Incorporated
DMP1011UCB9
10
20.0
VDS = -5.0V
18.0
VGS = -4.5V
VGS = -4.0V
14.0
VGS = -2.5V
12.0
VGS = -2.0V
VGS = -1.5V
10.0
8.0
6.0
4.0
TA = 150 C
TA = 125C
4
TA = 85C
TA = 25C
TA = -55C
VGS = -1.2V
VGS = -1.0V
0.0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0
2
0
0.1
0.5
1
1.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
2
2.5
0.09
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
6
2
2.0
0.08
0.07
0.06
0.05
ID = -2.0A
0.04
0.03
0.02
2
VGS = -2.5V
ID = -1A
1.5
1
VGS = -4.5V
ID = -3A
0.5
0.01
0
-50
0
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3 Typical Transfer Characteristic
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 4 On-Resistance Variation with Temperature
6
10
1
8
0.8
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
INFORMATION
ADVANCED
ADVANCE INFORMATION
8
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
16.0
-ID = 250µA
-ID = 1mA
0.6
0.4
0.2
-50
6
TA = 150C
T A = 125C
4
TA = 85C
TA = 25 C
TA = -55C
2
0
-25
0
25
50
75 100 125
TA, AMBIENT TEMPERATURE (°C)
Figure 5 Gate Threshold Variation
vs. Ambient Temperature
DMP1011UCB9
Document number: DS37852 Rev. 2 - 2
150
3 of 6
www.diodes.com
0
0.3
0.6
0.9
1.2
1.5
V SD, SOURCE-DRAIN VOLTAGE (V)
Figure 6 Diode Forward Voltage vs. Current
July 2015
© Diodes Incorporated
DMP1011UCB9
10000
4.5
1000
-VGS, GATE-SOURCE VOLTAGE (V)
C T, JUNCTION CAPACITANCE (pF)
4
Ciss
Coss
Crss
100
3.5
3
0
100
1
2
3
4
5
6
7
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 7 Typical Junction Capacitance
8
VDS = -4V
ID = -2A
2.5
2
1.5
1
0.5
0
10
ID, DRAIN CURRENT (A)
0
2
4
6
8
Qg, TOTAL GATE CHARGE (nC)
Figure 8 Gate-Charge Characteristics
10
RDS(on)
Limited
10
DC
PW = 10s
PW = 1s
1
PW = 100ms
PW = 10ms
PW = 1ms
0.1
PW = 100µs
TJ(max) = 150°C
TA = 25°C
VGS = 4.5V
Single Pulse
DUT on 1 * MRP Board
0.01
0.01
0.1
1
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 SOA, Safe Operation Area
10
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
INFORMATION
ADVANCED
ADVANCE INFORMATION
f = 1MHz
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 138°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.0001
0.001
DMP1011UCB9
Document number: DS37852 Rev. 2 - 2
0.01
0.1
1
10
t1, PULSE DURATION TIMES (sec)
Figure 10 Transient Thermal Resistance
4 of 6
www.diodes.com
100
1000
10000
July 2015
© Diodes Incorporated
DMP1011UCB9
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
NEW PRODUCT
INFORMATION
ADVANCED
ADVANCE INFORMATION
D
9x-Ø b
Pin #1 ID
U-WLB1515-9
e
E
e
e
A3
A2
e
Dim
Min
Max
Typ
A
0.60
A2
0.36
0.36
A3
0.020 0.030 0.025
b
0.22
0.32
0.27
D
1.47
1.50
1.49
E
1.47
1.50
1.49
e
0.50
All Dimensions in mm
A
SEATING PLANE
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
D
Dimensions
C1
C
C1
C2
D
C
Value
(in mm)
0.50
1.00
1.00
0.25
C
C2
DMP1011UCB9
Document number: DS37852 Rev. 2 - 2
5 of 6
www.diodes.com
July 2015
© Diodes Incorporated
DMP1011UCB9
IMPORTANT NOTICE
NEW PRODUCT
INFORMATION
ADVANCED
ADVANCE INFORMATION
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMP1011UCB9
Document number: DS37852 Rev. 2 - 2
6 of 6
www.diodes.com
July 2015
© Diodes Incorporated
Similar pages