ISC ITK72A12N1 Isc n-channel mosfet transistor Datasheet

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor
TK72A12N1,ITK72A12N1
·FEATURES
·Low drain-source on-resistance:
RDS(ON) = 4.5mΩ (VGS = 10 V)
·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
120
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
72
A
IDM
Drain Current-Single Pulsed
355
A
PD
Total Dissipation @TC=25℃
45
W
Tj
Max. Operating Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
Rth(ch-c)
Rth(ch-a)
PARAMETER
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
isc website:www.iscsemi.cn
1
MAX
UNIT
2.77
℃/W
62.5
℃/W
isc & iscsemi is registered trademark
INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor
TK72A12N1,ITK72A12N1
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BVDSS
Drain-Source Breakdown Voltage
VGS=0V; ID= 10mA
120
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=1.0mA
2.0
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=36A
IGSS
Gate-Source Leakage Current
IDSS
VSDF
TYP
MAX
UNIT
V
4.0
V
4.5
mΩ
VGS= ±20V;VDS= 0V
±0.1
μA
Drain-Source Leakage Current
VDS= 120V; VGS= 0V
10
μA
Diode forward voltage
IDR =72A, VGS = 0 V
1.2
V
isc website:www.iscsemi.cn
2
isc & iscsemi is registered trademark
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