INCHANGE Semiconductor isc P-Channel MOSFET Transistor IPD068P03L3,IIPD068P03L3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175°C operating junction temperature ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -70 A IDM Drain Current-Single Pulsed -280 A PD Total Dissipation @TC=25℃ 100 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1.5 ℃/W 50 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc P-Channel MOSFET Transistor IPD068P03L3,IIPD068P03L3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -0.25mA -30 VGS(th) Gate Threshold Voltage VDS=VGS; ID= -0.15mA -1.0 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V -2.0 V VGS= -10V; ID= -70A 6.8 mΩ Gate-Source Leakage Current VGS= -20V;VDS= 0V -0.1 μA IDSS Drain-Source Leakage Current VDS= -30V; VGS= 0V -1 μA VSD Diode forward voltage IF= -70A, VGS = 0V -1.2 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark