Freescale A03TKLC Rf power ldmos transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: AFT09MS031N
Rev. 0, 5/2012
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from
764 to 941 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
Narrowband Performance (13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
P1dB
(W)
764
18.0
74.1
32
870
17.2
71.0
31
941
15.7
68.1
31
AFT09MS031NR1
AFT09MS031GNR1
764--941 MHz, 31 W, 13.6 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
TO--270--2
PLASTIC
AFT09MS031NR1
800 MHz Broadband Performance (13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
P1dB
(W)
760
15.7
62.0
44
820
15.7
63.0
37
870
15.5
61.0
36
TO--270--2 GULL
PLASTIC
AFT09MS031GNR1
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal
Type
870
CW
VSWR
Pout
(W)
Test
Voltage
>65:1 at all
Phase Angles
54
(3 dB Overdrive)
17
Result
No Device
Degradation
Features
• Characterized for Operation from 764 to 941 MHz
• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Integrated ESD Protection
• Integrated Stability Enhancements
• Wideband — Full Power Across the Band (764–870 MHz)
• 225°C Capable Plastic Package
• Exceptional Thermal Performance
• High Linearity for: TETRA, SSB, LTE
• Cost--effective Over--molded Plastic Packaging
• In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
Typical Applications
• Output Stage 800 MHz Trunking Band Mobile Radio
• Output Stage 900 MHz Trunking Band Mobile Radio
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
Drain
Gate
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
AFT09MS031NR1 AFT09MS031GNR1
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +40
Vdc
Gate--Source Voltage
VGS
--6.0, +12
Vdc
Operating Voltage
VDD
17, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
TC
--40 to +150
°C
TJ
--40 to +225
°C
PD
317
1.59
W
W/°C
Symbol
Value (2,3)
Unit
RθJC
0.63
°C/W
Case Operating Temperature
Operating Junction Temperature
(1,2)
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 31 W CW, 13.6 Vdc, IDQ = 500 mA, 870 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2500 V
Machine Model (per EIA/JESD22--A115)
A, passes 100 V
Charge Device Model (per JESD22--C101)
IV, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 40 Vdc, VGS = 0 Vdc)
IDSS
—
—
2
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 13.6 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
600
nAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 115 μAdc)
VGS(th)
1.6
2.1
2.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.2 Adc)
VDS(on)
—
0.1
—
Vdc
Forward Transconductance
(VGS = 10 Vdc, ID = 10 Adc)
gfs
—
7.8
—
S
Characteristic
Off Characteristics
On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
AFT09MS031NR1 AFT09MS031GNR1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Transfer Capacitance
(VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.1
—
pF
Output Capacitance
(VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
63
—
pF
Input Capacitance
(VDS = 13.6 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
140
—
pF
Dynamic Characteristics
Functional Tests (1) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 13.6 Vdc, IDQ = 500 mA, Pout = 31 W, f = 870 MHz
Common--Source Amplifier Power Gain
Gps
16.0
17.2
18.5
dB
Drain Efficiency
ηD
68.0
71.0
—
%
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, IDQ = 500 mA)
Frequency
(MHz)
Signal
Type
VSWR
870
CW
>65:1 at all Phase Angles
Pout
(W)
54
(3 dB Overdrive)
Test Voltage, VDD
Result
17
No Device Degradation
1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
300
9
Ciss
8
IDS, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
100
Coss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
10
Crss
TA = 25°C
VGS = 4.0 Vdc
7
6
5
4
3.5 Vdc
3
3.25 Vdc
2
1
2.5 Vdc
3.0 Vdc
0
1
0
5
15
10
0
20
2
6
4
8
10
12
14
16
18
20
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
Note: Measured with both sides of the transistor tied together.
Figure 3. Drain Current versus Drain--Source Voltage
109
VDD = 13.6 Vdc
MTTF (HOURS)
108
ID = 2.6 Amps
3.2 Amps
107
106
3.9 Amps
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
Figure 4. MTTF versus Junction Temperature -- CW
AFT09MS031NR1 AFT09MS031GNR1
4
RF Device Data
Freescale Semiconductor, Inc.
870 MHz NARROWBAND PRODUCTION TEST FIXTURE
C9
C10
C13
VGG
C16
VDD
AFT09MS031N
Rev. 0
C14
B1
B2
C15
C11
C12
C7
L1
C3
C5
L2
C1
C2
C4
CUT OUT AREA
L3
C6
C8
Figure 5. AFT09MS031NR1 Narrowband Test Circuit Component Layout — 870 MHz
Table 6. AFT09MS031NR1 Narrowband Test Circuit Component Designations and Values — 870 MHz
Part
Description
Part Number
Manufacturer
B1, B2
RF Beads, Long
2743021447
Fair--Rite
C1
3.9 pF Chip Capacitor
ATC100B3R9CT500XT
ATC
C2, C14, C15
56 pF Chip Capacitors
ATC100B560CT500XT
ATC
C3, C4, C5, C6
10 pF Chip Capacitors
ATC100B100JT500XT
ATC
C7, C8
3.6 pF Chip Capacitors
ATC100B3R6CT500XT
ATC
C9
2.5 μF Chip Capacitor
GRM31CR71H225KA88L
Murata
C10, C11
0.1 μF Chip Capacitors
C1206C104K1RAC--TU
Kemet
C12
10,000 pF Chip Capacitor
ATC200B103KT50XT
ATC
C13
22 μF, 25 V Tantalum Capacitor
TPSD226M025R0200
AVX
C16
330 μF, 35 V Electrolytic Capacitor
MCGPR35V337M10X16--RH
Multicomp
L1
8.0 nH, 3 Turn Inductor
A03TKLC
Coilcraft
L2
18.5 nH, 5 Turn Inductor
A05TKLC
Coilcraft
L3
5.0 nH, 2 Turn Inductor
A02TKLC
Coilcraft
PCB
0.030″, εr = 3.5
RO4350B
Rogers
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
AFT09MS031NR1 AFT09MS031GNR1
6
RF Device Data
Freescale Semiconductor, Inc.
VGS
RF
INPUT
C9
Z2
+
Z3
B1
Z4
Z5
C14
Z6
L1
Z7
Z8
C4
C3
Z9
C5
Z10
C6
Z11
0.280″ × 0.080″ Microstrip
0.490″ × 0.120″ Microstrip
0.610″ × 0.320″ Microstrip
0.320″ × 0.155″ × 0.620″ Microstrip Taper
0.139″ × 0.620″ Microstrip
0.225″ × 0.620″ Microstrip
0.121″ × 0.620″ Microstrip
0.254″ × 0.620″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Description
Z1
Microstrip
C7
Z12 Z13 Z14
L2
B2
0.190″ × 0.080″ Microstrip
0.040″ × 0.080″ Microstrip
0.454″ × 0.520″ Microstrip
0.054″ × 0.520″ Microstrip
0.620″ × 0.420″ × 0.620″ Microstrip Taper
0.433″ × 0.420″ Microstrip
0.665″ × 0.420″ Microstrip
0.200″ × 0.420″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
C8
L3
C11
Z9
Microstrip
Description
Figure 6. AFT09MS031NR1 Narrowband Test Circuit Schematic — 870 MHz
C1
C13
Table 7. AFT09MS031NR1 Narrowband Test Circuit Microstrips — 870 MHz
Z1
C10
C15
Z15
C12
C2
C16
+
Z16
VDS
RF
OUTPUT
TYPICAL CHARACTERISTICS — 870 MHz
45
VDD = 13.6 Vdc, Pin = 0.6 W
Pout, OUTPUT POWER (WATTS)
40
35
VDD = 12.5 Vdc, Pin = 0.6 W
30
VDD = 13.6 Vdc, Pin = 0.3 W
25
20
VDD = 12.5 Vdc
Pin = 0.3 W
15
10
5
0
f = 870 MHz
0.5
0
1
1.5
2
2.5
3
4.5
4
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 7. CW Output Power versus Gate--Source Voltage
70
18
17.5
60
Gps
50
17
40
16.5
Pout
30
16
20
15.5
10
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
18.5
80
ηD
VDD = 13.6 Vdc, IDQ = 500 mA
f = 870 MHz
Pout, OUTPUT POWER (WATTS)
19
0
15
0.01
1
0.1
2
Pin, INPUT POWER (WATTS)
Figure 8. Power Gain, CW Output Power and
Drain Efficiency versus Input Power
VDD = 13.6 Vdc, IDQ = 500 mA, Pout = 31 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
870
0.28 -- j0.71
0.98 -- j0.52
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50 Ω
Input
Matching
Network
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Zsource
50 Ω
Zload
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
760--870 MHz BROADBAND REFERENCE CIRCUIT, 50 OHM SYSTEM
Table 8. 760--870 MHz Broadband Performance (13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
P1dB
(W)
760
15.7
62.0
44
820
15.7
63.0
37
870
15.5
61.0
36
Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type
870
CW
VSWR
Pout
(W)
>65:1 at all
Phase Angles
64
(3 dB Overdrive)
Test Voltage, VDD
Result
17
No Device
Degradation
AFT09MS031NR1 AFT09MS031GNR1
8
RF Device Data
Freescale Semiconductor, Inc.
760--870 MHz BROADBAND REFERENCE CIRCUIT
C14
J1
C1
C15
C13
C16
C12
C17
C9
C7
L1
C2
L2
Q1
C3
C4
C5
C6
C10 C11
C8
TO--270--2
Rev. 1
Figure 10. AFT09MS031NR1 Broadband Reference Circuit Component Layout — 760--870 MHz
Table 10. AFT09MS031NR1 Broadband Reference Circuit Component Designations and Values — 760--870 MHz
Part
Description
Part Number
Manufacturer
C1, C10, C11, C12
5.6 pF Chip Capacitors
ATC600F5R6BT250XT
ATC
C2
6.8 pF Chip Capacitor
ATC600F6R8BT250XT
ATC
C3
8.2 pF Chip Capacitor
ATC600F8R2BT250XT
ATC
C4
12 pF Chip Capacitor
ATC600F120JT250XT
ATC
C5
10 pF Chip Capacitor
ATC600F100JT250XT
ATC
C6, C7
30 pF Chip Capacitors
ATC600F300JT250XT
ATC
C8, C9
22 pF Chip Capacitors
ATC600F220JT250XT
ATC
C13, C16
240 pF Chip Capacitors
ATC600F241JT250XT
ATC
C14
0.10 μF Chip Capacitor
GRM21BR71H104KA01B
Murata
C15
0.01 μF Chip Capacitor
GRM21BR72A103KA01B
Murata
C17
22 pF Chip Capacitor
ATC100A220JT150XT
ATC
L1
6.8 nH Inductor
0805WL6R8KT
ATC
L2
17 nH Inductor
0908SQ17NJLC
Coilcraft
Q1
RF Power LDMOS Transistor
AFT09MS031NR1
Freescale
J1
3 Pin
AMP--9--146305--0
TE Connectivity
PCB
0.020″, εr = 4.8
S1000--2, FR4
Shengyi
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
9
AFT09MS031NR1 AFT09MS031GNR1
10
RF Device Data
Freescale Semiconductor, Inc.
RF
INPUT
Z1
C1
Z2
C2
Z3
Z5
C4
Z6
C5
Z7
Z8
C17
Z9
L1
C6
C7 Z10
VDS
Z11
C14
C9
Z12
C15
C8
Z13
Z14
C16
L2
Z15
Z16
C10
Z17
C11
Z18
0.034″ × 0.060″ Microstrip
0.034″ × 0.380″ Microstrip
0.034″ × 0.215″ Microstrip
0.034″ × 0.054″ Microstrip
0.266″ × 0.025″ Microstrip
0.266″ × 0.080″ Microstrip
0.034″ × 0.050″ Microstrip
0.266″ × 0.015″ Microstrip
Z2*
Z3*
Z4
Z5, Z6
Z7, Z9
Z8
Z10
Description
Z1, Z20
Microstrip
0.034″ × 0.110″ Microstrip
0.034″ × 0.190″ Microstrip
0.034″ × 0.010″ Microstrip
0.034″ × 0.110″ Microstrip
0.390″ × 0.200″ Microstrip
0.034″ × 0.100″ Microstrip
0.390″ × 0.080″ Microstrip
0.390″ × 0.120″ Microstrip
Description
* Line length includes microstrip bends
Z19*
Z18*
Z17
Z16
Z15
Z14
Z13
Z11, Z12
Microstrip
Table 11. AFT09MS031NR1 Broadband Reference Circuit Microstrips — 760--870 MHz
Figure 11. AFT09MS031NR1 Broadband Reference Circuit Schematic — 760--870 MHz
C3
Z4
VGS
C12
Z19
C13
Z20
RF
OUTPUT
TYPICAL CHARACTERISTICS — 760--860 MHz BROADBAND
REFERENCE CIRCUIT
63
ηD
16
15.5
60
57
Gps
40
15
Pout
14.5
14
750
770
790
810
830
850
ηD, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
16.5
66
VDD = 13.6 Vdc, Pin = 1 W
IDQ = 100 mA
35
870
30
890
Pout, OUTPUT
POWER (WATTS)
17
f, FREQUENCY (MHz)
Figure 12. Power Gain, CW Output Power and Drain
Efficiency versus Frequency at a Constant Input Power
64
ηD
16
62
60
15.5
Gps
37
15
Pout
14.5
14
750
ηD, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
16.5
66
VDD = 12.5 Vdc, Pin = 1 W
IDQ = 100 mA
770
790
810
830
850
32
870
27
890
Pout, OUTPUT
POWER (WATTS)
17
f, FREQUENCY (MHz)
Figure 13. Power Gain, CW Output Power and Drain
Efficiency versus Frequency at a Constant Input Power
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
11
TYPICAL CHARACTERISTICS — 760--870 MHz BROADBAND
REFERENCE CIRCUIT
5
VDD = 13.6 Vdc, Pin = 1 W
50
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
60
VDD = 12.5 Vdc, Pin = 1 W
40
VDD = 13.6 Vdc, Pin = 0.5 W
VDD = 12.5 Vdc
Pin = 0.5 W
30
20
f = 820 MHz
10
VDD = 13.6 Vdc
Pin = 1 W
4
VDD = 12.5 Vdc
Pin = 1 W
3
VDD = 13.6 Vdc
Pin = 0.5 W
2
VDD = 12.5 Vdc
Pin = 0.5 W
1
f = 820 MHz
Detail A
0
0
1
2
3
4
0
5
0
0.8
0.4
1.2
1.6
2
VGS, GATE--SOURCE VOLTAGE (VOLTS)
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Detail A
VDD = 13.6 Vdc
IDQ = 100 mA
Gps, POWER GAIN (dB)
17
820 MHz
870 MHz
70
100
60
760 MHz
Gps
16
120
80
870 MHz
15
60
760 MHz
ηD
14
40
760 MHz
820 MHz
13
12
0.03
Pout
820 MHz
20
870 MHz
0
0.1
1
Pout, OUTPUT POWER (WATTS)
18
50
40
30
20
ηD, DRAIN EFFICIENCY (%)
Figure 14. CW Output Power versus Gate--Source Voltage
10
2
Pin, INPUT POWER (WATTS)
Figure 15. Power Gain, CW Output Power and
Drain Efficiency versus Input Power and
Frequency
AFT09MS031NR1 AFT09MS031GNR1
12
RF Device Data
Freescale Semiconductor, Inc.
760--870 MHz BROADBAND REFERENCE CIRCUIT
Zo = 2 Ω
Zload
f = 870 MHz
f = 760 MHz
f = 760 MHz
f = 870 MHz
Zsource
VDD = 13.6 Vdc, IDQ = 100 mA, Pout = 31 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
760
0.85 -- j1.31
0.80 -- j0.92
770
0.80 -- j1.30
0.78 -- j0.88
780
0.75 -- j1.28
0.78 -- j0.85
790
0.69 -- j1.26
0.76 -- j0.81
800
0.65 -- j1.24
0.76 -- j0.78
810
0.59 -- j1.21
0.72 -- j0.75
820
0.55 -- j1.18
0.70 -- j0.73
830
0.51 -- j1.15
0.67 -- j0.70
840
0.46 -- j1.11
0.62 -- j0.66
850
0.42 -- j1.01
0.57 -- j0.62
860
0.39 -- j1.02
0.52 -- j0.57
870
0.36 -- j0.97
0.48 -- j0.52
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50 Ω
Input
Matching
Network
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Zsource
50 Ω
Zload
Figure 14. Broadband Series Equivalent Source and Load Impedance — 760--870 MHz
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
13
PACKAGE DIMENSIONS
AFT09MS031NR1 AFT09MS031GNR1
14
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
15
AFT09MS031NR1 AFT09MS031GNR1
16
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
17
AFT09MS031NR1 AFT09MS031GNR1
18
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
19
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
Development Tools
• Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
May 2012
Description
• Initial Release of Data Sheet
AFT09MS031NR1 AFT09MS031GNR1
20
RF Device Data
Freescale Semiconductor, Inc.
How to Reach Us:
Home Page:
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