Intersil ISL71841SEH Radiation hardened 30v 32-channel analog Datasheet

DATASHEET
Radiation Hardened 30V 32-Channel Analog
Multiplexer
ISL71841SEH
Features
The ISL71841SEH is a radiation hardened, 32-channel high
ESD protected multiplexer that is fabricated using Intersil’s
proprietary P6SOI (Silicon On Insulator) process technology to
mitigate single event effects. It operates with a dual supply
voltage ranging from ±10.8V to ±16.5V. It has a 5-bit address
plus an enable pin that can be driven with adjustable logic
thresholds to conveniently select 1 of 32 available channels.
An inactive channel is separated from an active channel by a
high impedance, which inhibits any interaction between them.
• DLA SMD# 5962-15220
The ISL71841SEH’s low rON allows for improved signal
integrity and reduced power losses. The ISL71841SEH is also
designed for cold sparing making it excellent for high reliability
applications that have redundancy requirements. It is
designed to provide a high impedance to the analog source in
a powered off condition, making it easy to add additional
backup devices without loading signal sources. The
ISL71841SEH also incorporates input analog overvoltage
protection, which will disable the switch to protect downstream
devices.
• Flexible split rail operation
- Positive supply above GND (V+) . . . . . . . +10.8V to +16.5V
- Negative supply below GND (V-) . . . . . . . . -10.8V to -16.5V
The ISL71841SEH is available in a 48 Ld CQFP, 44 Ld CLCC, or
die form and operates across the extended temperature range
of -55°C to +125°C.
• Break-before-make switching
There is also a 16-channel version available offered in a 28 Ld
CDFP, please refer to the ISL71840SEH datasheet for more
information. For a list of differences please refer to Table 1 on
page 3.
Related Literature
• UG037, “ISL71841SEHEV1Z Evaluation Board User Guide”
• TR007, “Single Event Effects (SEE) Testing of the
ISL71841SEH 32:1 30V Multiplexer”
• Fabricated using P6SOI process technology
- Provides latch-up immunity
• ESD protection 8kV (HBM)
• Rail-to-rail operation
• Overvoltage protection
• Low rON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <500Ω (typical)
• Adjustable logic threshold control with VREF pin
• Cold sparing capable (from ground). . . . . . . . . . . . . . . . .±25V
• Analog overvoltage range (from ground) . . . . . . . . . . . . .±35V
• Off switch leakage . . . . . . . . . . . . . . . . . . . 100nA (maximum)
• Transition times (tR, tF) . . . . . . . . . . . . . . . . . . . 500ns (typical)
• Grounded metal lid (internally connected)
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation tolerance
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . 100krad(Si) (see Note)
- SEB LETTH . . . . . . . . . . . . . . . . . . . . . . . . . 86.4MeV•cm2/mg
NOTE: Product capability established by initial characterization. All
subsequent lots are assurance tested to 50krad (0.01rad(Si)/s)
wafer-by-wafer.
• TR011, “Total Dose Testing of the ISL71841SEH 32-channel
Analog Multiplexer”
ISL71841SEH
600
500
IN01
IN03
.
.
.
OUT
ADC
IN32
rDS(ON) (Ω)
IN02
400
+125°C
+25°C
300
200
100
-55°C
5
0
ADDRESS
EN
FIGURE 1. TYPICAL APPLICATION
June 3, 2016
FN8735.4
1
-20
-15
-10 -5.0
0
5.0
10
SWITCH INPUT VOLTAGE (V)
15
20
FIGURE 2. rDS(ON) vs POWER SUPPLY ACROSS SWITCH INPUT
COMMON-MODE VOLTAGE AT +25°C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2015, 2016. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
ISL71841SEH
Table of Contents
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin Configurations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin Descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Thermal Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Specifications (±15V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Specifications (±12V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Typical Performance Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Post High Dose Rate Radiation Characteristics (V± = ±15V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Post High Dose Rate Radiation Characteristics (V± = ±12V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Post Low Dose Rate Radiation Characteristics (V± = ±15V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Post Low Dose Rate Radiation Characteristics (V± = ±12V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Applications Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power-Up Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VREF and Logic Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
24
24
24
24
ISL71841SEH vs ISL71840SEH. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Die Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Die Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Interface Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Assembly Related Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Additional Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Weight of Packaged Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lid Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25
25
25
25
Metalization Mask Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
About Intersil . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Package Outline Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
R48.A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Ceramic Leadless Chip Carrier Packages (CLCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
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ISL71841SEH
Ordering Information
ORDERING NUMBER
(Note 3)
TEMP RANGE
(°C)
PART NUMBER
PKG.
DWG. #
PACKAGE
5962R1522001VXC
ISL71841SEHVF (Note 1)
-55 to +125
48 LD CQFP (RoHS Compliant) R48.A
N/A
ISL71841SEHF/PROTO (Note 1)
-55 to +125
48 LD CQFP (RoHS Compliant) R48.A
5962R1522001VYA
ISL71841SEHVL (Note 2)
-55 to +125
44 LD CLCC
J44.A
N/A
ISL71841SEHL/PROTO (Note 2)
-55 to +125
44 LD CLCC
J44.A
5962R1522001V9A
ISL71841SEHVX
-55 to +125
DIE (RoHS Compliant)
N/A
ISL71841SEHX/SAMPLE
-55 to +125
DIE (RoHS Compliant)
N/A
ISL71841SEHEV1Z
Evaluation Board
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. These Intersil Hermetic Packaged products are intended for SnPb soldering and may be shipped with terminations precoated with SnPb solder
compatible with SnPb soldering operations only.
3. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed must be
used when ordering.
TABLE 1. TABLE OF DIFFERENCES
SPECIFICATION
ISL71840SEH
ISL71841SEH
Number of Channels
16
32
Supply Current (I+/I-)
350µA (Maximum)
400µA (Maximum)
60nA (Maximum)
120nA (Maximum)
Output Leakage (+125°C)
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ISL71841SEH
Pin Configurations
39
38
37
10
11
12
13
14
15
16
17
36
35
34
33
32
31
18
19 20 21 22 23 24 25 26 27 28 29 30
IN28
IN27
IN26
IN25
IN24
IN23
IN22
IN21
IN20
IN19
IN18
IN17
IN29
1
IN28
2
IN31
3
IN30
4
OUT
IN14
5
IN15
IN13
6
IN16
IN12
IN13
IN14
IN15
IN16
NC
OUT
NC
NC
IN32
IN31
IN30
IN29
IN12
IN11
IN10
IN9
IN8
IN7
IN6
IN5
IN4
IN3
IN2
IN1
6 5 4 3 2 1 48 47 46 45 44 43
42
7
41
8
40
9
IN32
ISL71841SEH
(44 LD CLCC)
TOP VIEW
ISL71841SEH
(48 LD CQFP)
TOP VIEW
44 43 42 41 40
IN11 7
39 IN27
IN10 8
38 IN26
IN9 9
37 IN25
IN8 10
36 IN24
IN7 11
35 IN23
IN6 12
34 IN22
IN5 13
33 IN21
IN4 14
32 IN20
IN3 15
31 IN19
IN2 16
30 IN18
IN1 17
29 IN17
V-
NC
GND
EN
A4
A3
A2
A1
A0
V+
VREF
V-
EN
GND
NC
A4
NC
A3
A1
A2
A0
V+
VREF
18 19 20 21 22 23 24 25 26 27 28
Pin Descriptions
PIN NAME
PIN NUMBER
48 LD CQFP
PIN NUMBER
44 LD CLCC
NC
2, 26, 27, 47, 48
NA
OUT
1
1
Output for multiplexer
V+
19
18
Positive power supply
V-
30
27
Negative power supply
INx
DESCRIPTION
Not connected, no internal connection
3, 4, 5, 6, 7, 8, 9, 10, 11, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, Inputs for multiplexer
13, 14, 15, 16, 17,
12, 13, 14, 15, 16, 17, 18,
31, 32, 33, 34, 35, 36, 37, 29, 30, 31, 32, 33, 34, 35, 36,
38, 39, 40, 41, 42, 43, 44, 37, 38, 39, 40, 41, 42, 43, 44
45, 46
Ax
21, 22, 23, 24, 25
20, 21, 22, 23, 24,
EN
28
25
Enable control for multiplexer (active low)
VREF
20
19
Reference voltage used to set logic thresholds
GND
29
26
Ground
LID
NA
NA
Package Lid is internally connected to GND (Pin 29 on CQFP, Pin 26
on CLCC)
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4
Address lines for multiplexer
FN8735.4
June 3, 2016
ISL71841SEH
Absolute Maximum Ratings
Thermal Information
(V+)
Positive Supply Voltage above GND
(Note 6). . . . . . . . . . . . . . . . . +20V
Negative Supply Voltage below GND (V-) (Note 6) . . . . . . . . . . . . . . . . .-20V
Maximum Supply Voltage Differential (V+ to V-) (Note 6) . . . . . . . . . . . 40V
Analog Input Voltage (INx)
From GND (Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35V
Digital Input Voltage Range (EN, Ax) . . . . . . . . . . . . . . . . . . . . . . . . GND to V+
VREF to GND (Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16.5V
ESD Tolerance
Human Body Model (Tested per MIL-STD-883 TM 3015) . . . . . . . . . 8kV
Charged Device Model (Tested per JESD22-C101D) . . . . . . . . . . . . 250V
Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . . 250V
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
48 Ld CQFP (Notes 4, 5) . . . . . . . . . . . . . . .
50
2
44 Ld CLCC (Notes 4, 5). . . . . . . . . . . . . . . .
31
3
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Positive Supply Voltage Above GND (V+) . . . . . . . . . . . . . +10.8V to +16.5V
Negative Supply Voltage Below GND (V-) . . . . . . . . . . . . . . .-10.8V to -16.5V
Supply Voltage Differential (V+ to V-) . . . . . . . . . . . . . . . . . . . . 21.6V to 33V
VREF to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V to 5.5V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
4. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
5. For JC, the “case temp” location is the center of the package underside.
6. Tested in a heavy ion environment at LET = 86.3MeV•cm2/mg at +125°C.
Electrical Specifications (±15V) V+ = 15V, V- = -15V, VAH = 4.0V, VAL = 0.8V, VREF = VEN = 5.0V, TA= +25°C, unless otherwise noted.
Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high
dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.
SYMBOL
VS
Analog Input Signal Range
rON
Channel ON-Resistance
ΔrON
RFLAT(ON)
IS(OFF)
rON Match Between Channels
MIN
(Note 7)
TYP
MAX
(Note 7)
V-
-
V+
V
V± = ±15.0V, ±16.5V
IOUT = -1mA, VIN = +5V, -5V
-
-
500
Ω
V± = ±15.0V, ±16.5V
IOUT = -1mA, VIN = V+, V-
-
-
700
Ω
VIN = +5V, -5V; IOUT = -1mA
-
10
20
Ω
PARAMETER
TEST CONDITIONS
UNIT
ON-Resistance Flatness
VIN = +5V, -5V
-
-
25
Ω
Switch Off Leakage
VIN = V+ - 5V, V± = ±16.5V
All unused inputs are tied to V- + 5V
-10
-
10
nA
Post radiation
-100
-
100
nA
V- +
5V, V± = ±16.5V
VIN =
All other inputs = V+ - 5V
TA = +25°C, -55°C
-10
-
10
nA
TA = +125°C
-20
-
20
nA
Post radiation
-100
-
100
nA
VIN = +25V, V± = VEN = VA = VREF = 0V
TA = +25°C, V± = 0V
-10
-
10
nA
TA = -55°C, +125°C
-10
-
80
nA
Post radiation
-100
-
100
nA
VIN = -25V, V± = VEN = VA = VREF = 0V
TA = +25°C, V± = 0V
-10
-
10
nA
TA = -55°C, +125°C
-80
-
10
nA
Post radiation
-100
-
100
nA
IS(OFF) POWER OFF Switch Off Leakage with Device
Powered Off
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FN8735.4
June 3, 2016
ISL71841SEH
Electrical Specifications (±15V) V+ = 15V, V- = -15V, VAH = 4.0V, VAL = 0.8V, VREF = VEN = 5.0V, TA= +25°C, unless otherwise noted.
Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high
dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued)
SYMBOL
IS(OFF) POWER OFF Switch Off Leakage with Device
Powered Off
IS(ON) OVERVOLT
IS(OFF) OVERVOLT
ID(OFF)
MIN
(Note 7)
TYP
MAX
(Note 7)
UNIT
VIN = +25V, VEN/VA/VREF = 0V
V± = OPEN, TA = +25°C
-10
-
10
nA
TA = -55°C, +125°C
-10
-
80
nA
Post radiation
-100
-
100
nA
VIN = -25V, VEN/VA/VREF = 0V
V± = OPEN, TA = +25°C
-10
-
10
nA
TA = -55°C, +125°C
-80
-
10
nA
Post radiation
-100
-
100
nA
VIN = +35V, VOUT = 0V, TA = +25°C, -55°C
All unused switch inputs = GND,
V± = ±16.5V
-10
-
10
nA
TA = +125°C
-80
-
80
nA
Post radiation
-500
-
500
nA
VIN = -35V, VOUT = 0V, TA = +25°C, -55°C
All unused switch inputs = GND,
V± = ±16.5V
-10
-
10
nA
PARAMETER
Switch On Leakage Current Into
the Source (overvoltage)
Switch Off Leakage Current Into
the Source (overvoltage)
Switch Off Leakage
TEST CONDITIONS
TA = +125°C
-20
-
20
nA
Post radiation
-500
-
500
nA
VIN = +35V, VOUT = 0V, TA = +25°C, -55°C
All unused switch inputs = GND,
V± = ±16.5V
-10
-
10
nA
TA = +125°C
-80
-
80
nA
Post radiation
-750
-
750
nA
VIN = -35V, VOUT = 0V, TA = +25°C, -55°C
All unused switch inputs = GND,
V± = ±16.5V
-10
-
10
nA
TA = +125°C
-20
-
20
nA
Post radiation
-750
-
750
nA
VOUT = V+ - 5V, all inputs = V- + 5V
V± = ±16.5V, TA = +25°C, -55°C
-10
-
10
nA
0
-
120
nA
-80
-
80
nA
-10
-
10
nA
TA = +125°C
-120
-
0
nA
Post radiation
-80
-
80
nA
VOUT = 0V, VIN = +35V, V± = ±16.5V
All unused inputs are tied to GND
-10
-
10
nA
Post radiation
-500
-
500
nA
VOUT = 0V, VIN = -35V, V± = ±16.5V
All unused inputs are tied to GND
-10
-
10
nA
Post radiation
-500
-
500
nA
TA = +125°C
Post radiation
V-
V+ -
VOUT = + 5V, all inputs =
5V
V± = ±16.5V, TA = +25°C, -55°C
ID(OFF) OVERVOLT
Switch Off Leakage Current Into
the Drain (overvoltage)
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6
FN8735.4
June 3, 2016
ISL71841SEH
Electrical Specifications (±15V) V+ = 15V, V- = -15V, VAH = 4.0V, VAL = 0.8V, VREF = VEN = 5.0V, TA= +25°C, unless otherwise noted.
Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high
dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued)
SYMBOL
PARAMETER
ID(ON)
Switch On Leakage Current Into
the Source/Drain
MIN
(Note 7)
TYP
MAX
(Note 7)
UNIT
-10
-
10
nA
TA = +125°C
0
-
120
nA
Post radiation
-100
-
100
nA
-10
-
10
nA
TA = +125°C
-120
-
0
nA
TEST CONDITIONS
VIN = VOUT = V+ - 5V, TA = +25°C, -55°C
All unused inputs = V- + 5V, V± = ±16.5V
V-
VIN = VOUT = + 5V, TA = +25°C, -55°C
All unused inputs = V- + 5V, V± = ±16.5V
Post radiation
-100
-
100
nA
Logic Input High/Low Voltage
VREF = 5.0V
1.2
-
1.6
V
IAH, IENH
Input Current with VAH, VENH
VA = VEN = 4.0V
V+= 16.5V, V- = -16.5V
-100
-
100
nA
IAL, IENL
Input Current with VAL, VENL
VA = VEN = 0.8V
V+ = 16.5V, V- = -16.5V
-100
-
100
nA
I+
Quiescent Supply Current
VIN = VA = VEN = 0.8V, V± = ±15.0V, ±16.5V
-
-
400
µA
I-
Quiescent Supply Current
VIN = VA = VEN = 0.8V, V± = ±15.0V, ±16.5V
-400
-
-
µA
I+
Standby Supply Current
VIN = VA = VEN = 4.0V, V± = ±15.0V, ±16.5V
-
-
400
µA
I-
Standby Supply Current
VIN = VA = VEN = 4.0V, V± = ±15.0V, ±16.5V
-400
-
-
µA
IREF
Supply Current into VREF
VREF = 5.5V, VIN = VA = VEN = 0.8V,
V± = ±15.0V, ±16.5V
10
-
35
µA
tALH
Transition Time
Figures 4, 5
-
0.5
800
ns
tAHL
Transition Time
Figures 4, 5
-
0.5
800
ns
tBBM
Break-Before-Make Delay
Figures 8, 9 TA = -55°C, +25°C, +125°C
5
50
200
ns
Post radiation
5
-
400
ns
Figures 6, 7 TA = -55°C, +25°C, +125°C
-
0.5
600
ns
Post radiation
-
-
800
ns
Figures 6, 7 TA = -55°C, +25°C, +125°C
-
0.5
600
ns
Post radiation
-
-
800
ns
-
2
5
pC
VAH/L, VENH/L
DYNAMIC
tENABLE
tDISABLE
Enable Turn-On Time
Disable Turn-Off Time
VCTE
Charge Injection
CL = 100pF, VIN = 0V, (Figure 6)
VISO
Off Isolation
VEN = 4V, RL = 1kΩ, f = 200kHz, CL = 7pF,
VRMS = 3V
75
-
-
dB
VCT
Crosstalk
VEN = 0.8V, RL = 1kΩ, f = 200kHz, CL = 7pF,
VRMS = 3V
47
-
-
dB
CA
Digital Input Capacitance
f = 1MHz, V+ = V- = 0V
-
-
7
pF
f = 1MHz,
V+
f = 1MHz,
V+
CIN(OFF)
COUT(OFF)
Input Capacitance
Output Capacitance
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7
=
V-
= 0V
-
-
5
pF
=
V-
= 0V
-
-
50
pF
FN8735.4
June 3, 2016
ISL71841SEH
Electrical Specifications (±12V)
V+ = 12V, V- = -12V, VAH = 4.0V, VAL = 0.8V, VREF = VEN = 5.0V, TA= +25°C, unless otherwise noted.
Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high
dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.
SYMBOL
PARAMETER
VS
Analog Input Signal Range
rON
Channel ON-Resistance
ΔrON
RFLAT(ON)
TEST CONDITIONS
MIN
(Note 7)
TYP
V-
MAX
(Note 7)
UNIT
V+
V
V± = ±10.8V, ±13.2V
IOUT = -1mA, VIN = +5V, -5V
-
-
500
Ω
V± = ±10.8V, ±13.2V
IOUT = -1mA, VIN = V+, V-
-
-
700
Ω
rON Match Between Channels
VIN = +5V, -5V; IOUT = -1mA
-
10
20
Ω
ON-Resistance Flatness
VIN = +5V, -5V, V± = ±13.2V
-
-
25
Ω
VIN = +5V, -5V, V± = ±10.8V,
TA = +25°C, -55°C, +125°C
-
-
30
Ω
VIN = +5V, -5V, V± = ±10.8V, post radiation,
TA = +25°C
-
-
40
Ω
I+
Quiescent Supply Current
VIN = VA = VEN = 0.8V, V± = ±10.8V, ±13.2V
-
-
400
µA
I-
Quiescent Supply Current
VIN = VA = VEN = 0.8V, V± = ±10.8V, ±13.2V
-400
-
-
µA
I+
Standby Supply Current
VIN = VA = VEN = 4.0V, V± = ±10.8V, ±13.2V
-
-
400
µA
I-
Standby Supply Current
VIN = VA = VEN = 4.0V, V± = ±10.8V, ±13.2V
-400
-
-
µA
IREF
Supply Current Into VREF
VREF = 5.5V, VIN = VA = VEN = 0.8V,
V± = ±10.8V, ±13.2V
-
-
35
µA
tALH
Transition Time
Figures 4, 5
-
0.5
800
ns
tAHL
Transition Time
Figures 4, 5
-
0.5
800
ns
tBBM
Break-Before-Make Delay
Figures 8, 9 TA = -55°C, +25°C, +125°C
5
50
200
ns
Post radiation
5
-
400
ns
Figures 6, 7 TA = -55°C, +25°C, +125°C
-
0.5
600
ns
Post radiation
-
-
800
ns
Figures 6, 7 TA = -55°C, +25°C, +125°C
-
0.5
600
ns
Post radiation
-
-
800
ns
DYNAMIC
tENABLE
tDISABLE
Enable Turn-On Time
Disable Turn-Off Time
NOTE:
7. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.
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8
FN8735.4
June 3, 2016
ISL71841SEH
TABLE 2. TRUTH TABLE
A4
A3
A2
A1
A0
EN
“ON”-CHANNEL
X
X
X
X
X
1
None
0
0
0
0
0
0
1
0
0
0
0
1
0
2
0
0
0
1
0
0
3
0
0
0
1
1
0
4
0
0
1
0
0
0
5
0
0
1
0
1
0
6
0
0
1
1
0
0
7
0
0
1
1
1
0
8
0
1
0
0
0
0
9
0
1
0
0
1
0
10
0
1
0
1
0
0
11
0
1
0
1
1
0
12
0
1
1
0
0
0
13
0
1
1
0
1
0
14
0
1
1
1
0
0
15
0
1
1
1
1
0
16
1
0
0
0
0
0
17
1
0
0
0
1
0
18
1
0
0
1
0
0
19
1
0
0
1
1
0
20
1
0
1
0
0
0
21
1
0
1
0
1
0
22
1
0
1
1
0
0
23
1
0
1
1
1
0
24
1
1
0
0
0
0
25
1
1
0
0
1
0
26
1
1
0
1
0
0
27
1
1
0
1
1
0
28
1
1
1
0
0
0
29
1
1
1
0
1
0
30
1
1
1
1
0
0
31
1
1
1
1
1
0
32
NOTE: X = Don’t care, “1” = Logic High, “0” = Logic Low
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9
FN8735.4
June 3, 2016
ISL71841SEH
Block Diagram
V+
A0
IN1
1
OUT
A1
A2
A3
A4
IN32
32
EN
V‐
ADDRESS INPUT BUFFER
AND LEVEL SHIFTER
DECODERS
MULTIPLEX SWITCHES
FIGURE 3. BLOCK DIAGRAM
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10
FN8735.4
June 3, 2016
ISL71841SEH
Timing Diagrams
ISL71841SEH
+4.0V
+0.8V
A4
A3
A2
A1
A0
50Ω
4V
IN01
+15V, 0V
“11111”
ADDRESS
IN02-IN31
50%
0V, +15V
IN32
50%
“00000”
0.8V
15V
+0.8V
tAHL
OUT
EN
10kΩ
50pF
50%
50%
0V
FIGURE 4. ADDRESS TIME TO OUTPUT TEST CIRCUIT
FIGURE 5. ADDRESS TIME TO OUTPUT DIAGRAM
ISL71841SEH
A4
A3
A2
A1
A0
tALH
OUTPUT
4V
IN01
+10V
IN02-IN32
ENABLE
50%
50%
0.8V
10V
EN
+4.0V
OUT
1kΩ
50Ω
+0.8V
tDISABLE
tENABLE
50pF
OUTPUT
50%
50%
0V
FIGURE 7. TIME TO ENABLE/DISABLE OUTPUT DIAGRAM
FIGURE 6. TIME TO ENABLE/DISABLE OUTPUT TEST CIRCUIT
ISL71841SEH
+4.0V
A4
A3
A2
A1
A0
50Ω
+0.8V
IN01
4V
+5V
IN02-IN31
ADDRESS
IN32
0.8V
+0.8V
OUT
EN
VOUT
5V
50%
1kΩ
50pF
OUT
0V
FIGURE 9. BREAK-BEFORE-MAKE DIAGRAM
FIGURE 8. BREAK-BEFORE-MAKE TEST CIRCUIT
4V
ISL71841SEH
+4.0V
+0.8V
50Ω
A4
A3
A2
A1
A0
tBBM
IN01
0V
ADDRESS
IN02-IN31
IN32
0.8V
15V
+0.8V
EN
OUT
Q = 100pF * ΔVOUT
VOUT
OUT
100pF
ΔVOUT
0V
FIGURE 10. CHARGE INJECTION TEST CIRCUIT
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11
FIGURE 11. CHARGE INJECTION DIAGRAM
FN8735.4
June 3, 2016
ISL71841SEH
Typical Performance Curves
600
600
500
500
+125°C
+25°C
300
+125°C
+25°C
400
rDS(ON) (Ω)
400
rDS(ON) (Ω)
V± = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified.
300
200
200
100
100
-55°C
-55°C
0
-20
-15
-10
-5
0
5
10
15
0
-20
20
-15
-10
SWITCH INPUT VOLTAGE (V)
600
700
500
600
+125°C
200
0
-20
20
400
300
-15
-10
-5
0
5
10
15
-55°C
0
-15
20
-10
SWITCH INPUT VOLTAGE (V)
-5
0
5
10
15
10
15
SWITCH INPUT VOLTAGE (V)
FIGURE 14. rDS(ON) vs VCM (V± = 16.5V)
FIGURE 15. rDS(ON) vs VCM (V± = 10.8V)
600
600
500
500
+125°C
+25°C
400
rDS(ON) (Ω)
rDS(ON) (Ω)
15
+25°C
100
-55°C
300
200
0
-15
10
200
100
100
5
+125°C
500
300
400
0
FIGURE 13. rDS(ON) vs VCM (V± = 15.0V)
rDS(ON) (Ω)
rDS(ON) (Ω)
FIGURE 12. rDS(ON) vs VCM (V± = 14.5V)
400 +25°C
-5
SWITCH INPUT VOLTAGE (V)
+125°C
+25°C
300
200
100
-55°C
-10
-5
0
5
SWITCH INPUT VOLTAGE (V)
FIGURE 16. rDS(ON) vs VCM (V± = 12.0V)
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12
10
15
0
-15
-55°C
-10
-5
0
5
SWITCH INPUT VOLTAGE (V)
FIGURE 17. rDS(ON) vs VCM (V± = 13.2V)
FN8735.4
June 3, 2016
ISL71841SEH
Typical Performance Curves
V± = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. (Continued)
700
600
t ADDHL (ns)
500
5V/DIV
+125°C
400
+25°C
-55°C
300
200
2V/DIV
100
tADDLH = 211.199ns
tADDHL = 561.469ns
0
10
11
12
500ns/DIV
13
14
15
16
17
SPLIT SUPPLY RAILS (±V)
FIGURE 18. TYPICAL ADDRESS TO OUTPUT DELAY (V± = ±15V, +25°C)
FIGURE 19. ADDRESS TO OUTPUT DELAY (HIGH TO LOW)
300
250
t ADDLH (ns)
5V/DIV
200
-55°C
+125°C
150
1V/DIV
+25°C
100
50
0
10
11
12
13
14
15
16
17
tDISABLE = 202.207ns
tENABLE = 352.379ns
500ns/DIV
SPLIT SUPPLY RAILS (±V)
FIGURE 21. TYPICAL ENABLE TO OUTPUT DELAY (V± = ±15V, +25°C)
FIGURE 20. ADDRESS TO OUTPUT DELAY (LOW TO HIGH)
400
600
350
500
300
t DISABLE (ns)
t ENABLE (ns)
300
400
+125°C
200
+25°C
-55°C
250
200
150
100
100
0
10
-55°C
+25°C
+125°C
50
11
12
13
14
15
16
SPLIT SUPPLY RAILS (±V)
FIGURE 22. ENABLE TO OUTPUT DELAY (LOW TO HIGH)
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13
17
0
10
11
12
13
14
15
16
17
SPLIT SUPPLY RAILS (±V)
FIGURE 23. DISABLE TO OUTPUT DELAY (LOW TO HIGH)
FN8735.4
June 3, 2016
ISL71841SEH
Typical Performance Curves
V± = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. (Continued)
120
100
+125°C
2V/DIV
tBBM (ns)
80
60
+25°C
40
1V/DIV
-55°C
20
tBBM = 73.425ns
0
10
11
12
13
14
15
16
200ns/DIV
SPLIT SUPPLY RAILS (±V)
FIGURE 24. TYPICAL BREAK-BEFORE-MAKE DELAY (V± = 15V, +25°C)
FIGURE 25. BREAK-BEFORE-MAKE DELAY
160
120
100
120
OFF ISOLATION (dB)
OFF ISOLATION (dB)
140
100
80
60
40
80
60
40
20
20
0
100
1k
10k
100k
0
10
10M
1M
100
FREQUENCY (Hz)
FIGURE 26. OFF ISOLATION (V± = ±15V, RL = 1kΩ, +25°C)
140
120
120
100
100
80
60
40
1M
80
60
40
20
20
0
1k
10k
100k
FREQUENCY (Hz)
FIGURE 27. OFF ISOLATION (V± = ±15V, RL = OPEN, +25°C)
CROSSTALK (dB)
CROSSTALK (dB)
17
100
1k
10k
100k
1M
FREQUENCY (Hz)
FIGURE 28. CROSSTALK (V± = ±15V, RL = 1kΩ, +25°C)
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14
10M
0
10
100
1k
10k
100k
1M
FREQUENCY (Hz)
FIGURE 29. CROSSTALK (V± = ±15V, RL = OPEN, +25°C)
FN8735.4
June 3, 2016
ISL71841SEH
Typical Performance Curves
VIN: 5V/div
VOUT: 5V/div
V± = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. (Continued)
V+ = +12V
V- = -12V
100µs/DIV
FIGURE 30. OVERVOLTAGE/UNDERVOLTAGE PROTECTION (+25°C)
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15
FN8735.4
June 3, 2016
ISL71841SEH
Post High Dose Rate Radiation Characteristics (V± = ±15V)
Unless otherwise
specified, V± = ±15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s.
This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed.
0
SUPPLY CURRENT SHIFT (µA)
SUPPLY CURRENT SHIFT (µA)
7
6
BIASED
5
4
3
GROUNDED
2
1
0
0
20
40
60
80
100
120
140
-1
GROUNDED
-2
-3
-4
-6
-7
160
BIASED
-5
0
20
1.6
80
100
120
140
160
60
1.4
50
BIASED
1.2
rDS(ON) SHIFT (Ω)
SUPPLY CURRENT SHIFT (µA)
60
FIGURE 32. IEE SUPPLY CURRENT SHIFT vs HDR RADIATION
FIGURE 31. ICC SUPPLY CURRENT SHIFT vs HDR RADIATION
1.0
0.8
GROUNDED
0.6
0.4
BIASED
40
30
GROUNDED
20
10
0.2
0
0
40
HIGH DOSE RATE RADIATION (krad(Si))
HIGH DOSE RATE RADIATION (krad(Si))
20
40
60
80
100
120
140
0
160
0
20
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 34. rDS(ON) SHIFT (VIN = V+) vs HDR RADIATION
FIGURE 33. IREF SUPPLY CURRENT SHIFT vs HDR RADIATION
25
20
18
16
rDS(ON) SHIFT (Ω)
rDS(ON) SHIFT (Ω)
20
BIASED
15
10
5
0
0
40
60
80
100
120
140
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 35. rDS(ON) SHIFT (VIN = +5V) vs HDR RADIATION
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16
12
10
8
6
GROUNDED
4
GROUNDED
20
BIASED
14
2
160
0
0
20
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 36. rDS(ON) SHIFT (VIN = -5V) vs HDR RADIATION
FN8735.4
June 3, 2016
ISL71841SEH
Post High Dose Rate Radiation Characteristics (V± = ±15V)
Unless otherwise
specified, V± = ±15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s.
This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. (Continued)
8
250
7
BIASED
200
5
tADDLH SHIFT (ns)
rDS(ON) SHIFT (Ω)
6
BIASED
4
3
2
GROUNDED
1
0
150
100
GROUNDED
50
-1
-2
0
20
40
60
80
100
120
140
0
160
0
20
HIGH DOSE RATE RADIATION (krad(Si))
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 37. rDS(ON) SHIFT (VIN = V-) vs HDR RADIATION
FIGURE 38. tADD SHIFT (LOW TO HIGH) vs HDR RADIATION
35
60
30
50
BIASED
BIASED
20
tBBM SHIFT (ns)
tADDHL SHIFT (ns)
25
15
10
5
GROUNDED
40
30
20
GROUNDED
0
10
-5
-10
0
20
40
60
80
100
120
140
0
0
160
20
HIGH DOSE RATE RADIATION (krad(Si))
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 39. tADD SHIFT (HIGH TO LOW) vs HDR RADIATION
FIGURE 40. tBBM SHIFT vs HDR RADIATION
50
200
180
160
tDISABLE SHIFT (ns)
tENABLE SHIFT (ns)
40
BIASED
30
20
10
GROUNDED
140
BIASED
120
GROUNDED
100
80
60
40
0
20
-10
0
20
40
60
80
100
120
140
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 41. tENABLE SHIFT vs HDR RADIATION
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17
160
0
0
20
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 42. tDISABLE SHIFT vs HDR RADIATION
FN8735.4
June 3, 2016
ISL71841SEH
Post High Dose Rate Radiation Characteristics (V± = ±12V)
Unless otherwise
specified, V± = ±12V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s.
This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed.
0
SUPPLY CURRENT SHIFT (µA)
SUPPLY CURRENT SHIFT (µA)
7
6
BIASED
5
4
3
2
GROUNDED
1
0
0
20
40
60
80
100
120
140
-1
GROUNDED
-2
-3
-4
-5
BIASED
-6
-7
0
160
20
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 43. ICC SUPPLY CURRENT SHIFT vs HDR RADIATION
rDS(ON) SHIFT (Ω)
SUPPLY CURRENT SHIFT (µA)
50
BIASED
1.2
100
120
140
160
1.0
0.8
GROUNDED
0.6
0.4
BIASED
40
30
20
10
0.2
0
20
40
60
80
100
120
140
0
160
GROUNDED
0
20
HIGH DOSE RATE RADIATION (krad(Si))
25
25
rDS(ON) SHIFT (Ω)
30
BIASED
15
10
GROUNDED
5
0
20
40
60
80
100
120
140
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 47. rDS(ON) SHIFT (VIN = +5V) vs HDR RADIATION
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18
60
80
100
120
140
160
FIGURE 46. rDS(ON) SHIFT (VIN = V+) vs HDR RADIATION
30
20
40
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 45. IREF SUPPLY CURRENT SHIFT vs HDR RADIATION
rDS(ON) SHIFT (Ω)
80
60
1.4
0
60
FIGURE 44. IEE SUPPLY CURRENT SHIFT vs HDR RADIATION
1.6
0
40
HIGH DOSE RATE RADIATION (krad(Si))
20
BIASED
15
10
GROUNDED
5
160
0
0
20
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 48. rDS(ON) SHIFT (VIN = -5V) vs HDR RADIATION
FN8735.4
June 3, 2016
ISL71841SEH
Post High Dose Rate Radiation Characteristics (V± = ±12V)
10
300
8
250
tADDLH SHIFT (ns)
rDS(ON) SHIFT (Ω)
Unless otherwise
specified, V± = ±12V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s.
This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. (Continued)
6
BIASED
4
2
0
-2
20
40
60
80
BIASED
150
100
50
GROUNDED
0
200
100
120
140
0
160
GROUNDED
0
20
HIGH DOSE RATE RADIATION (krad(Si))
60
40
BIASED
50
30
BIASED
tBBM SHIFT (ns)
tADDHL SHIFT (ns)
35
25
20
15
10
0
20
40
60
80
100
40
30
20
GROUNDED
GROUNDED
10
5
120
140
0
160
0
20
HIGH DOSE RATE RADIATION (krad(Si))
60
80
100
120
140
160
FIGURE 52. tBBM SHIFT vs HDR RADIATION
200
50
180
45
BIASED
160
tDISABLE SHIFT (ns)
40
tENABLE SHIFT (ns)
40
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 51. tADD SHIFT (HIGH TO LOW) vs HDR RADIATION
35
30
25
20
15
GROUNDED
10
BIASED
140
120
GROUNDED
100
80
60
40
20
5
0
160
FIGURE 50. tADD SHIFT (LOW TO HIGH) vs HDR RADIATION
FIGURE 49. rDS(ON) SHIFT (VIN = V-) vs HDR RADIATION
0
40
60
80
100
120
140
HIGH DOSE RATE RADIATION (krad(Si))
0
20
40
60
80
100
120
140
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 53. tENABLE SHIFT vs HDR RADIATION
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19
160
0
0
20
40
60
80
100
120
140
HIGH DOSE RATE RADIATION (krad(Si))
160
FIGURE 54. tDISABLE SHIFT vs HDR RADIATION
FN8735.4
June 3, 2016
ISL71841SEH
Post Low Dose Rate Radiation Characteristics (V± = ±15V)
Unless otherwise
specified, V± = ±15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This
data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed.
0
1.0
SUPPLY CURRENT SHIFT (µA)
SUPPLY CURRENT SHIFT (µA)
1.2
GROUNDED
0.8
0.6
BIASED
0.4
0.2
0
0
10
20
30
40
50
-0.2
BIASED
-0.4
-0.6
-0.8
-1.0
GROUNDED
-1.2
-1.4
60
0
FIGURE 55. ICC SUPPLY CURRENT SHIFT vs LDR RADIATION
30
40
50
60
10
8
GROUNDED
2.0
rDS(ON) SHIFT (Ω)
SUPPLY CURRENT SHIFT (µA)
20
FIGURE 56. IEE SUPPLY CURRENT SHIFT vs LDR RADIATION
2.5
1.5
BIASED
1.0
BIASED
6
4
2
0
GROUNDED
0.5
0
10
LOW DOSE RATE RADIATION (krad(Si))
LOW DOSE RATE RADIATION (krad(Si))
-2
0
10
20
30
40
50
-4
60
0
LOW DOSE RATE RADIATION (krad(Si))
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 57. IREF SUPPLY CURRENT SHIFT vs LDR RADIATION
FIGURE 58. rDS(ON) SHIFT (VIN = +5V) vs LDR RADIATION
25
6
5
20
BIASED
3
rDS(ON) SHIFT (Ω)
rDS(ON) SHIFT (Ω)
4
2
GROUNDED
1
0
-1
-2
15
BIASED
10
5
0
GROUNDED
-3
-4
0
10
20
30
40
50
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 59. rDS(ON) SHIFT (VIN = -5V) vs LDR RADIATION
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20
60
-5
0
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 60. rDS(ON) SHIFT (VIN = V+) vs LDR RADIATION
FN8735.4
June 3, 2016
ISL71841SEH
Post Low Dose Rate Radiation Characteristics (V± = ±15V)
Unless otherwise
specified, V± = ±15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This
data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed. (Continued)
250
0
BIASED
-1
200
-2
rDS(ON) SHIFT (Ω)
tADDLH SHIFT (ns)
GROUNDED
-3
-4
-5
-6
-7
100
50
-8
BIASED
-9
-10
0
10
20
30
40
50
0
0
60
LOW DOSE RATE RADIATION (krad(Si))
60
FIGURE 62. tADD SHIFT (LOW TO HIGH) vs LDR RADIATION
0
14
-40
tBBM SHIFT (ns)
-30
BIASED
-50
-60
-70
-80
-90
-100
0
GROUNDED
12
-20
tADDHL SHIFT (ns)
10
20
30
40
50
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 61. rDS(ON) SHIFT (VIN = V-) vs LDR RADIATION
-10
20
30
40
50
8
BIASED
6
4
2
GROUNDED
10
10
0
60
0
LOW DOSE RATE RADIATION (krad(Si))
300
15
250
tDISABLE SHIFT (ns)
BIASED
10
5
GROUNDED
30
40
50
60
BIASED
200
GROUNDED
150
100
50
-5
-10
0
20
FIGURE 64. tBBM SHIFT vs LDR RADIATION
20
0
10
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 63. tADD SHIFT (HIGH TO LOW) vs LDR RADIATION
tENABLE SHIFT (ns)
GROUNDED
150
10
20
30
40
50
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 65. tENABLE SHIFT vs LDR RADIATION
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21
60
0
0
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 66. tDISABLE SHIFT vs LDR RADIATION
FN8735.4
June 3, 2016
ISL71841SEH
Post Low Dose Rate Radiation Characteristics (V± = ±12V)
Unless otherwise
specified, V± = ±12V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This
data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed.
0
1.0
SUPPLY CURRENT SHIFT (µA)
SUPPLY CURRENT SHIFT (µA)
1.2
GROUNDED
0.8
0.6
BIASED
0.4
0.2
0
0
10
20
30
40
50
-0.2
BIASED
-0.4
-0.6
-0.8
-1.0
GROUNDED
-1.2
-1.4
60
0
LOW DOSE RATE RADIATION (krad(Si))
30
60
30
rDS(ON) SHIFT (Ω)
GROUNDED
1.5
1.0
BIASED
0.5
25
BIASED
20
15
10
5
0
0
10
20
30
40
50
LOW DOSE RATE RADIATION (krad(Si))
-5
60
GROUNDED
0
10
20
30
40
50
LOW DOSE RATE RADIATION (krad(Si))
60
FIGURE 70. rDS(ON) SHIFT (VIN = V+) vs LDR RADIATION
FIGURE 69. IREF SUPPLY CURRENT SHIFT vs LDR RADIATION
8
12
10
6
8
rDS(ON) SHIFT (Ω)
BIASED
6
4
2
0
GROUNDED
0
10
20
30
40
50
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 71. rDS(ON) SHIFT (VIN = +5V) vs LDR RADIATION
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22
GROUNDED
4
2
BIASED
0
-2
-2
-4
50
35
2.0
0
40
FIGURE 68. IEE SUPPLY CURRENT SHIFT vs LDR RADIATION
2.5
SUPPLY CURRENT SHIFT (µA)
20
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 67. ICC SUPPLY CURRENT SHIFT vs LDR RADIATION
rDS(ON) SHIFT (Ω)
10
60
-4
0
10
20
30
40
50
LOW DOSE RATE RADIATION (krad(Si))
60
FIGURE 72. rDS(ON) SHIFT (VIN = -5V) vs LDR RADIATION
FN8735.4
June 3, 2016
ISL71841SEH
Post Low Dose Rate Radiation Characteristics (V± = ±12V)
Unless otherwise
specified, V± = ±12V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This
data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed. (Continued)
2
350
0
300
tADDLH SHIFT (ns)
rDS(ON) SHIFT (Ω)
-2
GROUNDED
-4
-6
-8
-10
-12
250
200
100
50
10
20
30
40
50
LOW DOSE RATE RADIATION (krad(Si))
0
60
20
16
15
14
10
12
BIASED
5
0
-5
10
8
BIASED
6
2
0
10
20
30
40
50
LOW DOSE RATE RADIATION (krad(Si))
0
60
0
10
20
30
40
50
LOW DOSE RATE RADIATION (krad(Si))
60
FIGURE 76. tBBM SHIFT vs LDR RADIATION
25
300
20
250
tDISABLE SHIFT (ns)
BIASED
tENABLE SHIFT (ns)
60
GROUNDED
FIGURE 75. tADD SHIFT (HIGH TO LOW) vs LDR RADIATION
15
10
5
GROUNDED
0
200
BIASED
150
100
GROUNDED
50
-5
-10
10
20
30
40
50
LOW DOSE RATE RADIATION (krad(Si))
4
GROUNDED
-15
-20
0
FIGURE 74. tADD SHIFT (LOW TO HIGH) vs LDR RADIATION
tBBM SHIFT (ns)
tADDHL SHIFT (ns)
FIGURE 73. rDS(ON) SHIFT (VIN = V-) vs LDR RADIATION
-10
GROUNDED
150
BIASED
0
BIASED
0
10
20
30
40
50
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 77. tENABLE SHIFT vs LDR RADIATION
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60
0
0
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 78. tDISABLE SHIFT vs LDR RADIATION
FN8735.4
June 3, 2016
ISL71841SEH
Applications Information
ISL71841SEH vs ISL71840SEH
Power-Up Considerations
There is a 16-channel version of the ISL71841SEH available in a
28 Ld CDFP. In terms of performance specs, the parts are very
similar in behavior. Apart from the apparent increase in channel
density, the ISL71841SEH does have slightly higher output
leakage compared to the ISL71840SEH due to having more
channels connected to the output. The supply current for the
ISL71841SEH is also a bit higher compared to the ISL71840SEH.
(See Table 1 on page 3.)
The circuit is designed to be insensitive to any given power-up
sequence between V+, V- and VREF, however, it is recommended
that all supplies power-up relatively close to each other.
Overvoltage Protection
The ISL71841SEH has overvoltage protection on both the input
as well as the output. On the output, the voltage is limited to a
diode past the rails. Each of the inputs has independent
overvoltage protection that works regardless of the switch being
selected. If a switch experiences an overvoltage condition (3V to
4V past the rail), the switch is turned off. As soon as the voltage
returns within the rails, the switch returns to normal operation.
VREF and Logic Functionality
The VREF pin sets the logic threshold for the ISL71841SEH. The
range for VREF is between 4.5V and 5.5V with a nominal voltage
of 5V. The address pins and enable are compared against
roughly 30% of VREF voltage (refer to Figure 79). With 5.0V on
VREF, the switching point is set to around 1.4V. This switching
point allows for both 5V and 3.3V logic control.
ISL71841SEH
A/EN
400kΩ
VREF
TO DECODER
200kΩ
FIGURE 79. SIMPLIFIED VREF CIRCUITRY
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24
FN8735.4
June 3, 2016
ISL71841SEH
Die Characteristics
Assembly Related Information
Die Dimensions
SUBSTRATE POTENTIAL
Floating
5000µm x 4080µm (197 mils x 161 mils)
Thickness: 483µm ±25µm (19 mils ±1 mil)
Additional Information
Interface Materials
WORST CASE CURRENT DENSITY
GLASSIVATION
1.6 x 105 A/cm2
Type: 12kÅ Silicon Nitride on 3kÅ Oxide
TRANSISTOR COUNT
TOP METALLIZATION
10752
Type: 300Å TiN on 2.8µm AlCu
In Bondpads, TiN has been removed.
Weight of Packaged Device
48 Ld CQFP: 1.54 grams (typical)
44 Ld CLCC: 2.02 grams (typical)
BACKSIDE FINISH
Silicon
Lid Characteristics
PROCESS
Finish: Gold
Potential: Grounded, tied to package GND pin
In 48 Ld CQFP: pin 29
In 44 Ld CLCC: pin 26
P6SOI
Metalization Mask Layout
IN12
IN13
IN14
IN15
IN16
OUT
IN32
IN31
IN30
IN29
IN28
IN11
IN27
IN10
IN26
IN9
IN25
IN8
IN24
IN7
IN23
IN6
IN22
IN5
IN21
IN4
IN20
IN3
IN19
IN2
IN18
IN1
Submit Document Feedback
V+
VREF
25
A0
A1
A2
A3
A4
EN
BAR
GND
V‐
IN17
FN8735.4
June 3, 2016
ISL71841SEH
TABLE 3. ISL71840SEH DIE LAYOUT X-Y COORDINATES
PAD NUMBER
PAD NAME
PACKAGING PIN
ΔX
(µm)
ΔY
(µm)
X
(µm)
Y
(µm)
1
IN28
P42
122
122
2232.2
1776.05
2
IN29
P43
122
122
1956.5
1772.2
3
IN30
P44
122
122
1529.15
1772.2
4
IN31
P45
122
122
1171.85
1772.2
5
IN32
P46
122
122
816.35
1772.2
9
OUT
P1
122
122
7.2
1773.25
11
IN16
P3
122
122.05
-829.525
1772.2
12
IN15
P4
122
122
-1192.2
1772.2
13
IN14
P5
122
122
-1553.65
1772.2
14
IN13
P6
122
122
-1965.35
1772.2
15
IN12
P7
122
122
-2232.2
1775.55
16
IN11
P8
122
122
-2232.2
1343.55
17
IN10
P9
122
122
-2232.2
944.5
18
IN9
P10
122
122
-2232.2
626.15
19
IN8
P11
122
122
-2232.2
354.4
20
IN7
P12
122
122.05
-2232.2
108.275
21
IN6
P13
122
122
-2232.2
-138.75
22
IN5
P14
122
122
-2232.2
-391.8
23
IN4
P15
122
122
-2232.2
-622.95
24
IN3
P16
122
122
-2232.2
-948.55
25
IN2
P17
122
122
-2232.2
-1379.95
26
IN1
P18
122
122
-2232.2
-1775.95
27
V+
P19
122
122
-1970.75
-1789.2
28
VREF
P20
122
122
-1558.65
-1789.2
29
A0
P21
122
122
-1196.8
-1789.2
30
A1
P22
122
122
-835.6
-1789.2
31
A2
P23
122
122
-533
-1789.2
32
A3
P24
122
122
-109.45
-1789.2
33
A4
P25
122
122
313.95
-1789.2
37
EN_B
P28
122
122
1171.9
-1789.2
38
GND
P29, P29
320
122
1525.85
-1789.1
39
V-
P30
122
122
1955.7
-1789.2
40
IN17
P31
122
122
2232.2
-1774.95
41
IN18
P32
122
122
2232.2
-1380.25
42
IN19
P33
122
122
2232.2
-947.45
43
IN20
P34
122
122
2232.2
-624.75
44
IN21
P35
122
122
2232.2
-391.95
45
IN22
P36
122
122
2232.2
-139.05
46
IN23
P37
122
122.05
2232.2
107.525
47
IN24
P38
122
122
2232.2
353.6
48
IN25
P39
122
122
2232.2
626.9
49
IN26
P40
122
122
2232.2
943.9
50
IN27
P41
122
122
2232.2
1342.7
NOTE: Origin of coordinates is the center of the die.
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26
FN8735.4
June 3, 2016
ISL71841SEH
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted.
Please go to the web to make sure that you have the latest revision.
DATE
REVISION
CHANGE
June 3, 2016
FN8735.4
Updated Ordering information table on page 3 by updating first column and updating Note 3.
Updated bolding in Electrical Specification table and added test conditions to the Break-Before-Make Delay,
Enable Turn-On Time and Disable Turn-Off Time specifications.
Changed from “VS” to “V±” in the titles of the Typical Performance, Post High and Post Low Dose Rate
Radiation Characteristics curve tables.
Changed units from mA to µA for Figures 31, 32, 33, 43, 44, 45, 55, 56, 57, 67, 68, 69
April 15, 2016
FN8735.3
Added ISL71841SEHVL and ISL71841SEHL/PROTO details to the Ordering Information table on page 3 and
added the applicable packaging information throughout datasheet.
Updated the heading for the Low Dose Rate Radiation Characteristics (Vs = ±15V) table on page 20 in third
sentence changed from “high” to “low”.
Updated the heading for the Low Dose Rate Radiation Characteristics (Vs = ±12V) table on page 22 in third
sentence changed from “high” to “low”.
December 11, 2015
FN8735.2
Updated Y-axis labels on Figures 31 through 78.
Updated crosstalk and off Isolation MIN in Electrical Spec table on page 7 from -75 to 75 (off isolation) and
-47 to 47 (crosstalk).
Changed all instances of VDD to V+ and VSS to V-.
September 29, 2015
FN8735.1
Updated Related Literature on page 1.
Updated testing information for ESD tolerances, HBM, CDM and MM in
“Absolute Maximum Ratings” on page 5
From:
Human Body Model (Tested per MIL-PRF-883 3015.7)
Charged Device Model (Tested per MIL-PRF-883 3015.7)
Machine Model (Tested per MIL-PRF-883 3015.7)
To:
Human Body Model (Tested per MIL-STD-883 TM 3015)
Charged Device Model (Tested per JESD22-C101D)
Machine Model (Tested per JESD22-A115-A)
Updated crosstalk and off Isolation MIN in Electrical Spec table on page 7 from -90 to -75 (off isolation) and
-47 (crosstalk)
Added Figures 26, 28 and 30 and updated figure titles for Figures 27 and 29 on page 14.
Updated top metalization thickness and composition in “Die Characteristics” on page 25.
Added Table 3 on page 26.
June 11, 2015
FN8735.0
Initial Release
About Intersil
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For the most updated datasheet, application notes, related documentation and related parts, please see the respective product
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
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27
FN8735.4
June 3, 2016
ISL71841SEH
Package Outline Drawing
R48.A
48 CERAMIC QUAD FLATPACK PACKAGE (CQFP)
Rev 3, 10/12
1.118 (28.40)
1.080 (27.43)
0.572 (14.53)
0.555 (14.10)
#1 #48
0.287 (7.29)
0.253 (6.43)
0.040 (1.02) BSC
PIN 1
INDEX AREA
0.572 (14.53)
0.555 (14.10)
1.118 (28.40)
1.080 (27.43)
0.007 (0.18) MIN
0.015 (0.38)
0.008 (0.20)
0.015 (0.38) MIN
TOP VIEW
0.099 (2.51)
0.076 (1.93)
0.016 (0.41)
0.009 (0.23)
SIDE VIEW
NOTE:
1. All dimensions are in inches (millimeters).
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28
FN8735.4
June 3, 2016
ISL71841SEH
Ceramic Leadless Chip Carrier Packages (CLCC)
J44.A
MIL-STD-1835 CQCC1-N44 (C-5)
44 PAD CERAMIC LEADLESS CHIP CARRIER PACKAGE
0.010 S E H S
D
INCHES
D3
SYMBOL
j x 45o
E3
B
E
h x 45o
0.010 S E F S
A
A1
PLANE 2
PLANE 1
-E-
B1
e
L
-H-
L3
MILLIMETERS
MAX
MAX
NOTES
6, 7
A
0.064
0.120
1.63
3.05
0.054
0.088
1.37
2.24
-
B
0.033
0.039
0.84
0.99
4
B1
0.022
0.028
0.56
0.71
2, 4
B2
0.072 REF
1.83 REF
-
B3
0.006
0.022
0.15
0.56
-
D
0.640
0.662
16.26
16.81
-
D1
0.500 BSC
12.70 BSC
-
D2
0.250 BSC
6.35 BSC
-
D3
-
0.662
E
0.640
0.662
16.26
16.81
2
16.81
-
E1
0.500 BSC
12.70 BSC
-
E2
0.250 BSC
6.35 BSC
-
E3
e
-
0.662
0.050 BSC
0.015
-
-
16.81
2
1.27 BSC
0.38
-
2
h
0.040 REF
1.02 REF
5
j
0.020 REF
0.51 REF
5
L
0.045
0.055
1.14
1.40
-
L1
0.045
0.055
1.14
1.40
-
L2
0.075
0.095
1.90
2.41
-
L3
0.003
0.015
0.08
0.38
ND
11
-
11
3
NE
11
11
3
N
44
44
3
-F-
Rev. 0 5/18/94
B3
E1
E2
MIN
A1
e1
0.007 M E F S H S
MIN
1. Metallized castellations shall be connected to plane 1 terminals
and extend toward plane 2 across at least two layers of ceramic
or completely across all of the ceramic layers to make electrical
connection with the optional plane 2 terminals.
L2
B2
L1
D2
e1
D1
NOTES:
2. Unless otherwise specified, a minimum clearance of 0.015 inch
(0.38mm) shall be maintained between all metallized features
(e.g., lid, castellations, terminals, thermal pads, etc.)
3. Symbol “N” is the maximum number of terminals. Symbols “ND”
and “NE” are the number of terminals along the sides of length
“D” and “E”, respectively.
4. The required plane 1 terminals and optional plane 2 terminals (if
used) shall be electrically connected.
5. The corner shape (square, notch, radius, etc.) may vary at the
manufacturer’s option, from that shown on the drawing.
6. Chip carriers shall be constructed of a minimum of two ceramic
layers.
7. Dimension “A” controls the overall package thickness. The maximum “A” dimension is package height before being solder dipped.
8. Dimensioning and tolerancing per ANSI Y14.5M-1982.
9. Controlling dimension: INCH.
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29
FN8735.4
June 3, 2016