DMN2029USD 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION NEW PRODUCT Product Summary V(BR)DSS RDS(on) max 20V 25m @ VGS = 4.5V 35m @ VGS = 2.5V Features Package SO-8 ID TA = +25°C 5.8A 4.8A Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching Mechanical Data performance, making it ideal for high efficiency power management applications. Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Applications DC-DC Converters Power Management Functions Backlighting SO-8 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 S1 D1 G1 D1 S2 D2 G2 D2 Top View Weight: 0.074 grams (approximate) D1 D2 G2 G1 S2 S1 Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number DMN2029USD-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information Top View 8 5 Logo N2029SD Part no . YY WW Xth week: 01 ~ 53 Year: “12” = 2012 1 DMN2029USD Document number: DS36127 Rev. 3 - 2 4 1 of 6 www.diodes.com May 2013 © Diodes Incorporated DMN2029USD Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION NEW PRODUCT Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t < 10s Value 20 ±8 5.8 4.7 ID A 6.9 5.7 2.1 30 15 11.2 ID Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (10s pulse, duty cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Units V V IS IDM IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady state t < 10s TA = +25°C TA = +70°C Steady state t < 10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD RθJA PD RθJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RθJC TJ, TSTG Value 1.2 0.7 115 70 1.4 0.9 95 60 14.5 -55 to +150 Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 16V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) RDS(ON) |Yfs| VSD — 14 19 10 0.7 1.5 25 35 — 1.2 V Static Drain-Source On-Resistance 0.6 — — — — VDS = VGS, ID = 250µA VGS = 4.5V, ID = 6.5A VGS = 2.5V, ID = 5.4A VDS = 5V, ID = 6.5A VGS = 0V, IS = 1.3A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — — 1171 133 110 1.2 10.4 18.6 1.9 2.3 16.5 33.3 119.3 53.5 7.5 2.0 — — — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ S V Test Condition pF VDS = 10V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 10V, ID = 3A nS VGS = 4.5V, VDD = 10V, RGEN = 6Ω, ID = 1A nS nC IS = 6.5A, dI/dt = 100A/μs IS = 6.5A, dI/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN2029USD Document number: DS36127 Rev. 3 - 2 2 of 6 www.diodes.com May 2013 © Diodes Incorporated DMN2029USD 30.0 VGS = 4.5V 18 VGS = 4.0V 16 VGS = 3.5V 20.0 VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 VGS = 2.0V VGS = 2.5V 15.0 10.0 VGS = 1.8V VDS = 5.0V 14 12 10 8 TA = 85°C 6 TA = 125°C 4 5.0 0.0 0 TA = -55°C 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.025 VGS = 2.5V 0.02 VGS = 4.5V 0.015 VGS = 10V 0.01 0.005 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.8 1.6 VGS = 2.5 V ID = 5A 1.4 VGS = 4.5V ID = 10A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMN2029USD Document number: DS36127 Rev. 3 - 2 3 of 6 www.diodes.com 2.5 0.5 1 1.5 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 0.03 VGS = 4.5V T A = 150°C 0.025 TA = 125°C 0.02 T A = 85°C TA = 25°C 0.015 T A = -55°C 0.01 0.005 0 0 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.03 TA = 25°C TA = 150°C 2 VGS = 1.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION NEW PRODUCT 20 VGS = 8.0V 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.04 0.03 VGS = 2.5V ID = 5A 0.02 VGS = 4.5V ID = 10A 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature May 2013 © Diodes Incorporated 20 1.8 18 1.6 16 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 2 1.4 1.2 ID = 1mA 1 0.8 0.6 ID = 250µA 0.4 14 12 0 T A = 25°C 10 8 6 4 0.2 2 0 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Figure 7 Gate Threshold Variation vs. Ambient Temperature -50 VGS GATE THRESHOLD VOLTAGE (V) f = 1MHz Ciss 1000 C oss 100 Crss 10 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 8 10000 CT, JUNCTION CAPACITANCE (pF) 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION NEW PRODUCT DMN2029USD 7 6 5 3 2 1 0 20 VDS = 10V ID = 3A 4 0 2 4 6 8 10 12 14 16 18 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 20 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RJA(t) = r(t) * RJA RJA = 113°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 11 Transient Thermal Resistance DMN2029USD Document number: DS36127 Rev. 3 - 2 4 of 6 www.diodes.com May 2013 © Diodes Incorporated DMN2029USD Package Outline Dimensions 0.254 ADVANCE INFORMATION NEW PRODUCT Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMN2029USD Document number: DS36127 Rev. 3 - 2 5 of 6 www.diodes.com May 2013 © Diodes Incorporated DMN2029USD ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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