Diodes DMT10H010LSS-13 100v n-channel enhancement mode mosfet Datasheet

DMT10H010LSS
100V N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
INFORMATION
ADVANCEINFORMATION
ADVANCED
Product Summary
Features and Benefits
BVDSS
RDS(ON) Max
ID
TC = +25°C
100V
9.5mΩ @ VGS = 10V
29.5A
Description and Applications
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON) and yet maintain superior switching
performance. This device is ideal for use in Notebook battery power
management and Loadswitch.

Backlighting

Power Management Functions

DC-DC Converters

100% Unclamped Inductive Switch (UIS) Test in Production


High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses





Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data

Case: SO-8

Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See Diagram

Terminals: Finish  Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208

Weight: 0.074 grams (Approximate)
D
SO-8
S
D
S
D
S
D
G
D
G
Top View
Internal Schematic
Top View
S
Equivalent circuit
Ordering Information (Note 4)
Part Number
DMT10H010LSS-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
= Manufacturer’s Marking
T1010LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 15 = 2015)
WW = Week (01 to 53)
T1010LS
YY WW
1
DMT10H010LSS
Document number: DS38035 Rev. 4 - 2
4
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December 2015
© Diodes Incorporated
DMT10H010LSS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
Steady
State
NEW PRODUCT
INFORMATION
ADVANCEINFORMATION
ADVANCED
Continuous Drain Current (Note 6), VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
TC = +25°C
TC = +100°C
Value
100
±20
11.5
9.2
ID
A
29.5
18.6
75
3
10
15
ID
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 8), L=0.3mH
Avalanche Energy (Note 8), L=0.3mH
Unit
V
V
IDM
IS
IAS
EAS
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Total Power (Note 5)
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Value
1.4
90
48.8
1.9
66
35.8
10.1
RJA
Total Power Dissipation (Note 6)
PD
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
RJA
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
RJC
TJ, TSTG
Unit
W
°C/W
W
°C/W
°C/W
°C
-55 to +150
Electrical Characteristics (TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
100
—
—
—
—
—
—
1
±100
V
µA
nA
VGS = 0V, ID = 1mA
VDS = 80V, VGS = 0V
VGS = 20V, VDS = 0V
VGS(TH)
RDS(ON)
VSD
1.9
8.0
9.0
10.0
0.8
2.8
9.5
12
14.5
1.3
V
Static Drain-Source On-Resistance
1.4
—
—
—
—
VDS = VGS, ID = 250µA
VGS = 10V, ID = 13A
VGS = 6V, ID = 13A
VGS = 4.5V, ID = 5A
VGS = 0V, IS = 13A
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
—
—
—
—
—
—
—
—
—
—
—
—
—
3,000
875
63
1.0
71
11
16
12
17
52
37
49
85
—
—
—
—
—
—
—
—
—
—
—
—
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
mΩ
V
Test Condition
pF
VDS = 50V, VGS = 0V
f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDD = 50V, ID = 13A,
VGS = 10V
ns
VDD = 50V, VGS = 10V,
ID = 13A, Rg = 6Ω
ns
nC
IF = 13A, di/dt = 100A/µs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMT10H010LSS
Document number: DS38035 Rev. 4 - 2
2 of 6
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December 2015
© Diodes Incorporated
DMT10H010LSS
30
30.0
VGS=4.5V
VGS=5.0V
20.0
25
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25.0
VDS=5V
VGS=3.5V
VGS=6.0V
15.0
VGS=10.0V
10.0
5.0
20
15
10
125℃
85℃
150℃
25℃
5
VGS=3.0V
175℃
0.0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
0.012
0.011
0.01
VGS = 4.5V
0.009
0.008
VGS = 6V
0.007
VGS = 10V
0.006
0.005
0.004
0
1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
-55℃
0
0
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
6
0.05
0.04
ID = 13A
0.03
ID = 5A
0.02
0.01
0
0
4
6
8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2
2
4
6
8
10
12
14
16
18
20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2.5
0.02
VGS = 10V
0.018
0.016
150℃
0.014
0.012
125℃
0.01
85℃
0.008
25℃
0.006
0.004
-55℃
0.002
0
0
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
NEW PRODUCT
INFORMATION
ADVANCEINFORMATION
ADVANCED
VGS=4.0V
4
6
8 10 12 14 16 18 20
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMT10H010LSS
Document number: DS38035 Rev. 4 - 2
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VGS = 10V, ID = 13A
2
VGS = 6V, ID = 13A
1.5
1
VGS = 4.5V, ID = 5A
0.5
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
December 2015
© Diodes Incorporated
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.02
0.018
0.016
VGS = 4.5V, ID = 5A
0.014
VGS = 6V, ID = 13A
0.012
0.01
0.008
0.006
VGS = 10V, ID = 13A
0.004
0.002
0
3.5
3
2.5
ID=1mA
2
1.5
ID=250μA
1
0.5
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
-25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
25
CT, JUNCTION CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
4
-50
30
VGS=0V, TJ=125℃
VGS=0V, TJ=150℃
20
VGS=0V, TJ=175℃
15
VGS=0V, TJ=85℃
10
VGS=0V, TJ=25℃
5
f=1MHz
Ciss
Coss
1000
Crss
100
VGS=0V, TJ=-55℃
10
0
0
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
0
1.5
10
100
8
10
5
10 15 20 25 30 35 40 45
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
50
RDS(on)
Limited
I D, DRAIN CURRENT (A)
VGS (V)
NEW PRODUCT
INFORMATION
ADVANCEINFORMATION
ADVANCED
DMT10H010LSS
6
VDS=50V, ID=13A
4
2
DC
1
PW = 10s
PW = 1s
PW = 100ms
0.1
0.01
PW = 10ms
T J(m ax) = 150°C
PW = 1ms
T A = 25°C
PW = 100µs
V GS = 10V
Single Pulse
DUT on 1 * MRP Board
0
0
15
30
45
60
Qg, TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
DMT10H010LSS
Document number: DS38035 Rev. 4 - 2
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0.001
0.01
0.1
1
10
100
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
1000
December 2015
© Diodes Incorporated
DMT10H010LSS
r(t), TRANSI ENT THERMAL RESISTANCE
NEW PRODUCT
INFORMATION
ADVANCEINFORMATION
ADVANCED
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 90°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
10
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SO-8
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82

0
8
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SO-8
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMT10H010LSS
Document number: DS38035 Rev. 4 - 2
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December 2015
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DMT10H010LSS
IMPORTANT NOTICE
NEW PRODUCT
INFORMATION
ADVANCEINFORMATION
ADVANCED
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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failure of the life support device or to affect its safety or effectiveness.
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Copyright © 2015, Diodes Incorporated
www.diodes.com
DMT10H010LSS
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December 2015
© Diodes Incorporated
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