ON NDBA180N10BT4H N-channel power mosfet Datasheet

NDBA180N10B
Power MOSFET
100V, 2.8mΩ, 180A, N-Channel
Features
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VDSS
• Ultra Low On-Resistance
• Low Gate Charge
• High Speed Switching
• 100% Avalanche Tested
• Pb-Free, Halogen Free and RoHS Compliance
RDS(on) Max
2.8mΩ@ 15V
100V
3.3mΩ@ 10V
N-Channel
2,4
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
100
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
180
A
Drain Current (DC) Limited by Package
IDL
100
A
IDP
600
A
PD
200
W
Junction Temperature
Tj
175
°C
Storage Temperature
Tstg
−55 to +175
°C
Source Current (Body Diode)
IS
100
A
Avalanche Energy (Single Pulse) *1
EAS
451
mJ
TL
260
°C
PW≤10μs, duty cycle≤1%
Power Dissipation
Tc=25°C
Lead Temperature for Soldering
Purposes, 3mm from Case for 10 Seconds
180A
Electrical Connection
Specifications
Drain Current (Pulse)
ID Max
Thermal Resistance Ratings
Parameter
Symbol
Value
Junction to Case Steady State
RθJC
0.75
Junction to Ambient *2
RθJA
62.5
Unit
1 : Gate
2 : Drain
3 : Source
4 : Drain
1
3
Marking
Packing Type:TL
°C/W
Note : *1 VDD=48V, L=100μH, IAV=70A (Fig.1)
*2 Surface mounted on FR4 board using recommended footprint
Stresses
Stresses exceeding
exceeding those
those listed
listed in
in the
the Maximum
Maximum Ratings
Ratings table
table may
may damage
damage the
the device.
device. IfIf any
any of
of these
these limits
limits are
are exceeded,
exceeded, device
device functionality
functionality should
should not
not be
be assumed,
assumed,
damage
damage may
may occur
occur and
and reliability
reliability may
may be
be affected.
affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 3
1
Publication Order Number :
NDBA180N10B/D
NDBA180N10B
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Value
Conditions
min
typ
Unit
max
Drain to Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=100V, VGS=0V
100
10
μA
V
Gate to Source Leakage Current
IGSS
VGS=±20V, VDS=0V
±200
nA
4
V
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
Forward Transconductance
gFS
VDS=10V, ID=50A
150
RDS(on)1
ID=50A, VGS=15V
2.3
2.8
mΩ
RDS(on)2
ID=50A, VGS=10V
2.5
3.3
mΩ
Static Drain to Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
2
S
6,950
pF
3,000
pF
Crss
15
pF
td(on)
95
ns
320
ns
185
ns
VDS=50V, f=1MHz
See Fig.2
130
ns
95
nC
VDS=48V, VGS=10V, ID=100A
31
nC
VSD
IS=100A, VGS=0V
0.9
Reverse Recovery Time
trr
See Fig.3
150
ns
Reverse Recovery Charge
Qrr
IS=100A, VGS=0V, VDD=50V, di/dt=100A/μs
580
nC
26
nC
1.5
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.3 Reverse Recovery Time Test Circuit
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Fig.2 Switching Time Test Circuit
NDBA180N10B
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3
NDBA180N10B
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NDBA180N10B
Package Dimensions
NDBA180N10BT4H
D2PAK-3 (TO-263, 3-LEAD)
CASE 418AJ
ISSUE B
unit : mm
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5
NDBA180N10B
ORDERING INFORMATION
Device
NDBA180N10BT4H
Package
Shipping
Note
D2PAK-3
(TO-263, 3-LEAD)
800 pcs. / Tape & Reel
Pb-Free and Halogen Free
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel
Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the NDBA180N10B is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
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nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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