IRSM506-076 IRSM516-076 Series 600V, 4A Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM506-076 and IRSM516-076 are 3-phase Integrated Power Modules (IPM) designed for advanced appliance motor drive applications such as energy efficient fans and pumps. These advanced IPMs offers a combination of low VCE(sat) Trench IGBT technology and the industry benchmark half-bridge high voltage, rugged driver in a familiar package. The modules are optimized for low EMI characteristics. IRSM506-076 includes temperature feedback while IRSM516-076 does not. Features 600V 3-phase inverter including high voltage gate drivers Integrated bootstrap functionality Low 1.7V VCE(sat) (max, 25°C, 1A) Trench IGBT Under-voltage lockout for all channels Matched propagation delay for all channels Temperature feedback via NTC (IRSM506-076 only) Optimized dV/dt for loss and EMI trade offs Open-emitter for single and leg-shunt current sensing 3.3V logic compatible Driver tolerant to negative transient voltage (-Vs) Advanced input filter with shoot-through protection Rugged design for PM fan and pump motors Isolation 1900VRMS, 1min Standard Pack Base Part Number IRSM506-076 IRSM516-076 1 NTC Yes No Package Type Orderable Part Number Form Quantity SOP23 Tube 240 IRSM506-076PA DIP23 Tube 240 IRSM506-076DA DIP23A Tube 240 IRSM506-076DA2 SOP23 Tube 240 IRSM516-076PA DIP23 Tube 240 IRSM516-076DA DIP23A Tube 240 IRSM516-076DA2 February 10, 2016 IRSM506-076 IRSM516-076 Series Internal Electrical Schematic 1 COM 17 V+ 2 VB1 1 COM 17 V+ 2 VB1 3 VCC1 3 VCC1 4 HIN1 Half-Bridge HVIC 5 LIN1 6 NC Integrated in HVIC 7 VB2 18 U/VS1 4 HIN1 Half-Bridge HVIC 5 LIN1 19 VR1 20 VR2 8 VCC2 6 NC 18 U/VS1 19 VR1 Integrated in HVIC 7 VB2 20 VR2 8 VCC2 9 HIN2 Half-Bridge HVIC 10 LIN2 21 V/VS2 9 HIN2 Half-Bridge HVIC 10 LIN2 11 VTH 21 V/VS2 11 NC 12 VB3 12 VB3 22 VR3 13 VCC3 14 HIN3 Half-Bridge HVIC 15 LIN3 23 W/VS3 16 NC 22 VR3 13 VCC3 14 HIN3 Half-Bridge HVIC 15 LIN3 23 W/VS3 16 NC IRSM506-076 IRSM516-076 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at manufacturing. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table. Symbol Description Min Max Unit VCES / VRRM IGBT/ FW Diode Blocking Voltage --- 600 V IO @ TC=25°C DC Output Current per IGBT --- 4.0 IOP @ TC =25°C Pulsed Output Current per IGBT (Note 1) --- 15 Pd @ TC=25°C Maximum Power Dissipation per IGBT --- 16 W VISO Isolation Voltage (1min) --- 1900 VRMS TJ Operating Junction Temperature -40 150 °C TC Operating Case Temperature -40 150 °C TS Storage Temperature -40 150 °C VS1,2,3 High Side Floating Supply Offset Voltage VB1,2,3 - 20 VB1,2,3 +0.3 V VB1,2,3 High Side Floating Supply Voltage -0.3 625 V VCC Low Side and Logic Supply voltage -0.3 25 V VIN Input Voltage of LIN, HIN COM -0.3 VCC+0.3 V A Note 1: Pulse Width = 100µs, Single Pulse 2 February 10, 2016 IRSM506-076 IRSM516-076 Series Recommended Operating Conditions Symbol Description Min Max Unit V+ Positive DC Bus Input Voltage --- 480 V VS1,2,3 High Side Floating Supply Offset Voltage (Note 2) 480 V VB1,2,3 High Side Floating Supply Voltage VS+12 VS+20 V VCC Low Side and Logic Supply Voltage 13.5 16.5 V VIN Input Voltage of LIN, HIN, ITRIP, EN, FLT 0 5 V Fp PWM Carrier Frequency --20 Note 2: Logic operational for Vs from COM-8V to COM+600V. Logic state held for Vs from COM-8V to COM-VBS. kHz Static Electrical Characteristics o (VCC-COM) = (VB-VS) = 15 V. TC = 25 C unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable to all six channels. The VCCUV parameters are referenced to COM. The VBSUV parameters are referenced to VS. Symbol Description Min Typ Max Units V(BR)CES Collector to Emitter Breakdown Voltage 600 --- --- V TJ=25°C, ILK=250µA ILKH Leakage Current of Each High Side IGBT 5 µA TJ=25°C, VCE=600V ILKL Leakage Current of Low Side IGBT Plus Gate Drive IC 10 µA TJ=25°C, VCE=600V VCE(ON) Collector to Emitter Saturation Voltage VFM --- 1.2 1.7 Conditions TJ=25°C, VCC=15V, Ic = 1A V TJ=150°C, VCC=15V, Ic = 1A (Note 3) TJ=25°C, VCC=15V, IF=1A --- 1.3 --- Diode Forward Voltage Drop --- 1.05 --- V VIN,th+ Positive Going Input Threshold 2.2 --- --- V VIN,th- Negative Going Input Threshold --- --- 0.8 V VCCUV+, VBSUV+ VCC and VBS Supply Under-Voltage, Positive Going Threshold 10.4 11.1 11.8 V VCCUV-, VBSUV- VCC and VBS supply Under-Voltage, Negative Going Threshold 10.2 10.9 11.6 V VCCUVH, VBSUVH VCC and VBS Supply Under-Voltage Lock-Out Hysteresis --- 0.2 --- V IQBS Quiescent VBS Supply Current VIN=0V --- 42 60 µA IQBS, ON Quiescent VBS Supply Current VIN=4V --- 42 60 µA IQCC Quiescent VCC Supply Current VIN=0V --- 1.7 4 mA IQCC, ON Quiescent VCC Supply Current VIN=4V --- 1.8 4 mA IIN+ Input Bias Current VIN=4V --- 4.6 18 µA VIN=3.3V IIN- Input Bias Current VIN=0V --- --- 2 µA VIN=0V RBR Internal Bootstrap Equivalent Resistor Value --- 200 --- Ω TJ=25°C Note 3: Characterized, not tested at manufacturing 3 February 10, 2016 IRSM506-076 IRSM516-076 Series Dynamic Electrical Characteristics o (VCC-COM) = (VB-VS) = 15 V. TC = 25 C unless otherwise specified. Symbol Description Min Typ Max Units TON Input to Output Propagation Turn-On Delay Time --- 0.7 1.5 µs TOFF Input to Output Propagation Turn-Off Delay Time --- 0.8 1.5 µs TFIL,IN Input Filter Time (HIN, LIN) 200 300 --- ns DT Deadtime Inserted --- 400 --- ns EON Turn-on switching energy loss --- 16 --- µJ EOFF Turn-off switching energy loss --- 10 --- µJ EREC Recovery energy loss --- 5 --- µJ EON,150 Turn-on switching energy loss --- 35 --- µJ EOFF,150 Turn-off switching energy loss --- 21 --- µJ --- 13 --- µJ Conditions ID=120mA, V+=30V See Fig.1 EREC,150 Recovery energy loss Note 4: Characterized, not tested at manufacturing VIN=0 & VIN=3.3V VIN=0 & VIN=3.3V without external deadtime V+=320V, ID=0.5A, L=40mH, TC=25°C (Note 4) V+=320V, ID=0.5A, L=40mH, TC=150°C (Note 4) Thermal and Mechanical Characteristics Symbol Description Min Typ Max Units Conditions Rth(J-C) Junction to Case Thermal Resistance, one IGBT --- 7.2 --- °C/W High Side V-Phase IGBT (Note 5) Rth(J-C) Junction to Case Thermal Resistance, one diode --- 9.1 --- °C/W High Side V-Phase Diode (Note 5) Note 5: Characterized, not tested at manufacturing. Case temperature (TC) point shown in Figure 2. Internal NTC – Thermistor Characteristics (IRSM506-076 Only) Symbol Description Min Typ Max Units R25 Resistance --- 47 --- kΩ TC=25°C, ±5% tolerance R125 Resistance --- 1.41 --- kΩ TC=125°C B B-constant (25-50°C) --- 4050 --- K ±2% tolerance (Note 6) -40 --- 125 °C Temperature Range Note 6: See application notes for usage 4 Conditions February 10, 2016 IRSM506-076 IRSM516-076 Series Qualification Information† †† Qualification Level Industrial Moisture Sensitivity Level MSL3 RoHS Compliant Yes UL Certified Yes – File Number E252584 ††† Machine Model Class B Human Body Model Class 2 ESD † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/ †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information. ††† SOP23 package only. Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information. 5 February 10, 2016 IRSM506-076 IRSM516-076 Series Module Pin-Out Description Pin 1 Name COM Description Logic Ground 2 VB1 High Side Floating Supply Voltage 1 3 VCC1 15V Supply 1 4 HIN1 Logic Input for High Side Gate Driver - Phase 1 5 LIN1 Logic Input for Low Side Gate Driver - Phase 1 6 NC Not Connected 7 VB2 High Side Floating Supply Voltage 2 8 VCC2 15V Supply 2 9 HIN2 Logic Input for High Side Gate Driver - Phase 2 10 LIN2 Logic Input for Low Side Gate Driver - Phase 2 VTH Thermistor Output (IRSM506-076DA) 11 NC Not Connected (IRSM516-076DA) 12 VB3 High Side Floating Supply Voltage 3 13 VCC3 15V Supply 3 14 HIN3 Logic Input for High Side Gate Driver - Phase 3 15 LIN3 Logic Input for Low Side Gate Driver - Phase 3 16 NC Not Connected 17 V+ DC Bus Voltage Positive 18 U/VS1 Output - Phase 1, High Side Floating Supply Offset 1 19 VR1 Phase 1 Low Side Emitter 20 VR2 Phase 2 Low Side Emitter 21 V/VS2 Output - Phase 2, High Side Floating Supply Offset 2 22 VR3 Phase 3 Low Side Emitter 23 W/VS3 Output - Phase 3, High Side Floating Supply Offset 2 16 15 14 13 12 11 10 9 8 7 6 0 4 3 2 1 A 0123-412W IRSM506-076PA 23 22 21 20 19 18 17 6 February 10, 2016 IRSM506-076 IRSM516-076 Series Referenced Figures VCE IC IC VCE HIN /LIN 50% HIN /LIN 90 % IC 90 % IC 50% VCE 50% HIN /LIN HIN /LIN 50% VCE 10 % IC 10 % IC tr tf TON TOFF Figure 1a: Input to Output propagation turn-on delay time. Figure 1b: Input to Output propagation turn-off delay time. IF VCE HIN /LIN Irr trr Figure 1c: Diode Reverse Recovery. Figure 1: Switching Parameter Definitions 14.5mm 3.8mm TC Top View Figure 2: TC measurement point for Rth(j-C) 7 February 10, 2016 IRSM506-076 IRSM516-076 Series Application Notes A basic application schematic is shown below. VB2 VB1 VB3 IRSM506-076 V BUS 2M V CC X TAL 0 HVICs P WMUH HIN 1 P WMV H HIN 2 P WMWH HIN 3 P WMUL LIN 1 U, VS1 V, VS2 W, VS3 X TAL 1 S PD-REF P WMV L A IN2 LIN 2 P WMWL LIN 3 IRMCF171 + GA TE KI LL Power Supply - A IN1 V DD 7.50k 3V IF B+ V TH IF BV DDCA P COM 6.04k IF BO V SS 1nF 7.68k 4.87k 0.25 Figure 3: Basic sensor-less motor drive circuit connection. Motor is connected to U, V, W A complete reference design board for running any permanent magnet motor via sensorless sinusoidal control is available. The board – photo below – features the µIPM™-DIP module and the iMotion™ digital control IC. Reference design kits are available on the Infineon website (irf.com > Design Resources > Reference Designs > Intelligent Power Modules) Figure 4: Reference design board featuring the µIPM™-DIP module and the iMotion™ IRMCF171 digital control IC 8 February 10, 2016 IRSM506-076 IRSM516-076 Series Figures 5-7 show the typical current capability for this module at specified conditions. In all tests, the application board – the IRMCS1071-1-D reference board – was placed in a box to prevent cooling from ambient airflow. Figure 5 is derived from using a heat sink that maintains T C at 125°C. Figures 6-7 represent current capability for the module as used without any heat sink. ∆TJA represents the difference in temperature between the junction of the high-side V-phase IGBT and the ambient, measured 10cm above and 6cm away from the board. Ambient temperature kept within 28-29°C. 2500 RMS Phase Current (mA) 2000 1500 3-Phase Modulation 1000 2-Phase Modulation 500 0 6 8 10 12 14 Carrier Frequency (kHz) 16 18 20 Figure 5: Maximum sinusoidal phase current vs PWM switching frequency with a heat sink. Space Vector Modulation, V+=320V, TA=28°C, TJ=150°C, TC=125°C 1000 900 RMS Phase Current (mA) 800 700 600 500 3-Phase Modulation 400 2-Phase modulation 300 200 100 0 6 8 10 12 14 Carrier Frequency (kHz) 16 18 20 Figure 6: Maximum sinusoidal phase current vs PWM switching frequency, no heat sink. Space Vector Modulation, V+=320V, TA=28°C, TJ=128°C 9 February 10, 2016 IRSM506-076 IRSM516-076 Series 800 RMS Phase Current (mA) 700 600 500 400 300 3-Phase Modulation 2-Phase Modulation 200 100 0 6 8 10 12 14 Carrier Frequency (kHz) 16 18 20 Figure 7: Maximum sinusoidal phase current vs PWM switching frequency, no heat sink. Space Vector Modulation, V+=320V, TA=28°C, TJ=98°C The module contains an NTC – connected between COM and the VTH pin – which can be used to monitor the temperature of the module. The NTC is effectively a resistor whose value decreases as the temperature rises. The NTC resistance can be calculated at any temperature as follows: 𝑅𝑇𝐻 = 𝑅25 𝑒 1 1 − )] 𝑇𝑇𝐻 𝑇25 [𝐵( , where 𝑅25 is 47kΩ and 𝐵 is 4050K An external resistor network is connected to the NTC, the simplest of which is one resistor pulled up to VCC as shown in Figure 3. The VTH vs NTC temperature, TTH curve for this configuration is shown in Figure 8 below. The min, typical and max curves result from the NTC having a ±5% tolerance on its resistance and ±2% tolerance on the B-parameter. Figure 9 shows the thermistor temperature, TTH plotted against the high-side V-phase junction temperature, TJ for a module without a heat sink. It is thus advisable to shut down the module when TTH reaches 125°C. 10 February 10, 2016 IRSM506-076 IRSM516-076 Series 14.0 min 12.0 typical max 10.0 VTH (V) 8.0 6.0 4.0 2.0 0.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 TTH (°C) Figure 8: VTH vs TTH with VTH pin pulled up to VCC with a 7.50kΩ (1%, 100ppm) resistor. A 15V, 1% variation in VCC is assumed. 140 120 TTH (°C 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 TJ (°C) Figure 9: TTH vs TJ for a module without a heat sink. VCC=15.4V, R=7.50kΩ 11 February 10, 2016 IRSM506-076 IRSM516-076 Series The µIPM™-DIP module series features an advanced filter for input pins, LIN and HIN. The filter rejects noise spikes and short pulses with widths shorter than T FIL,IN as illustrated in Figure 10 below. tFIL,IN HINx VSX Figure 10: Advanced input filter rejects noise spikes on a logic 0-level HIN signal. The behavior is similar for noise spikes on logic 1-level signals The advanced input filter maintains the pulse duration for pulses slightly longer than tFIL,IN. Figure 11 illustrates this feature. tFIL,IN HINx High Side Gate Drive Signal Figure 11: Advanced input filter maintains the pulse duration for pulses longer than t FIL,IN The module series also features shoot-through protection. If a logic 1-level signal is applied to LIN and HIN simultaneously, the IGBTs of the corresponding inverter leg are kept off. For overlapping logic 1-level LIN & HIN signals, a deadtime of duration DT is applied. The input-output logic table is shown below. $ HINx LINx V 1 0 V+ 0 1 0 0 0 * 1 1 * Sx $ * Voltage depends on direction of phase current Integrated shoot-through protection prevents simultaneous turn on of high side and low side IGBTs of the same inverter leg 12 February 10, 2016 IRSM506-076 IRSM516-076 Series SOP23 Package Outline Dimensions in mm 13 February 10, 2016 IRSM506-076 IRSM516-076 Series DIP23A Package Outline Dimensions in mm 14 February 10, 2016 IRSM506-076 IRSM516-076 Series DIP23 Package Outline Dimensions in mm 15 February 10, 2016 IRSM506-076 IRSM516-076 Series Top Marking A 0123-412P IRSM506-076PA Marking Code Date Code P = Pb Free; Y = Engineering Samples YWW format, where Y = least significant digit of the production year , WW = two digits representing the week of the production year Revision History Feb 9 16 Updated header & footer designs; added application notes related to advanced input filter February 10, 2016 IRSM506-076 IRSM516-076 Series Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. 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