BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Mechanical Data Applications General Purpose Interfacing Switch Power Management Functions Analog Switch Case: SOT363 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (approximate) SOT363 Top View D2 G1 S1 S2 G2 D1 e3 Top View Internal Schematic Ordering Information (Note 4) Part Number BSS84DW-7-F BSS84DWQ-13 BSS84DWQ-7 Notes: Compliance Standard Automotive Automotive Case SOT363 SOT363 SOT363 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html Marking Information YM Date Code Key Year 1998 Code J Month Code Jan 1 1999 K 2000 L Feb 2 BSS84DW Document number: DS30204 Rev. 17 - 2 2001 M Mar 3 2002 N Apr 4 YM K84 K84 2003 P May 5 K84 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2004 R 2005 S Jun 6 1 of 5 www.diodes.com 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D February 2013 © Diodes Incorporated BSS84DW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 5) Gate-Source Voltage Drain Current (Note 6) Continuous Continuous Symbol VDSS VDGR VGSS ID Value -50 -50 20 -130 Units V V V mA Value 300 417 -55 to +150 Units mW C/W C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS -50 -75 Zero Gate Voltage Drain Current IDSS µA µA nA IGSS -1 -2 -100 Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time 10 nA VGS = 0V, ID = -250µA VDS = -50V, VGS = 0V, TJ = +25°C VDS = -50V, VGS = 0V, TJ = +125°C VDS = -25V, VGS = 0V, TJ = +25°C VGS = 20V, VDS = 0V VGS(th) RDS (ON) gFS -0.8 0.05 -1.6 6 -2.0 10 V S VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Ciss Coss Crss 45 25 12 pF pF pF VDS = -25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) 10 18 ns ns VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V Notes: V Test Condition 5. RGS 20K. 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. 7. Short duration pulse test used to minimize self-heating effect. BSS84DW Document number: DS30204 Rev. 17 - 2 2 of 5 www.diodes.com February 2013 © Diodes Incorporated BSS84DW -600 400 TA = 25°C ID, DRAIN-SOURCE CURRENT (mA) PD , POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 -500 -400 -300 -200 -100 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 25 -1.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () 10 ID, DRAIN-CURRENT (A) -0.8 -0.6 -0.4 -0.2 -0.0 0 15 9 8 7 6 5 4 3 2 T A = 125°C 1 0 -5 -2 -3 -4 -6 -7 -8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 Drain-Current vs. Gate-Source Voltage -1 TA = 25°C 0 -1 -5 -2 -3 -4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 25.0 VGS = -10V ID = -0.13A RDS(ON), ON-RESISTANCE () 12 RDS(ON), ON-RESISTANCE () -1 -3 -4 -2 -5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 Drain-Source Current vs. Drain-Source Voltage 0 9 6 3 20.0 VGS = -3.5V VGS = -3V VGS = -4.5V 15.0 VGS = -5V VGS = -4V 10.0 5.0 VGS = -6V VGS = -8V VGS = -10V 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance vs. Junction Temperature BSS84DW Document number: DS30204 Rev. 17 - 2 3 of 5 www.diodes.com 0.0 -0.0 -0.4 -0.6 -0.8 ID, DRAIN-CURRENT (A) Fig. 6 On-Resistance vs. Drain-Current -0.2 -1.0 February 2013 © Diodes Incorporated BSS84DW Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT363 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0° 8° All Dimensions in mm B C H K M J D L F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X BSS84DW Document number: DS30204 Rev. 17 - 2 4 of 5 www.diodes.com February 2013 © Diodes Incorporated BSS84DW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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