ETC2 MSTC110 Thyristor/diode module Datasheet

MSTC110
Thyristor/Diode Modules
VRRM / VDRM 800 to 1600V
ITAV
110Amp
Applications




Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
MSTC
1
2
3
Features
6
7



5
4


International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide DCB
ceramic isolated metal baseplate

Module Type
TYPE
VRRM
VRSM
MSTC110-08
MSTC110-12
MSTC110-16
800V
1200V
1600V
900V
1300V
1700V
Maximum Ratings
Symbol
Conditions
Values
Units
ITAV
Sine 180 ;Tc=85℃
o
110
A
ITSM
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
2250
1900
A
it
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
25000
18000
A2s
Visol
a.c.50HZ;r.m.s.;1min
3000
V
-40 to 130
℃
2
Tvj
Tstg
-40 to 125
℃
Mt
To terminals(M5)
3±15%
Nm
Ms
To heatsink(M6)
5±15%
Nm
di/dt
TVJ= TVJM , 2/3VDRM ,IG =500mA
Tr<0.5us,tp>6us
150
A/us
dv/dt
TJ= TVJM ,2/3VDRM, linear voltage rise
1000
V/us
a
Maximum allowable acceleration
50
m/s
Weight
Module(Approximately)
100
g
2
Thermal Characteristics
Symbol
Conditions
Values
Units
Rth(j-c)
Cont.;per thyristor / per module
0.28/0.14
℃/W
Rth(c-s)
per thyristor / per module
0.2/0.1
℃/W
Document Number: MSTC110
Sep.06,2013
www.smsemi.com
1
MSTC110
Electrical Characteristics
Symbol
Conditions
VTM
T=25℃ ITM =300A
IRRM/IDRM
Min.
Values
Typ.
Max.
Units
1.72
V
TVJ =TVJM ,VR=VRRM ,VD=VDRM
20
mA
V
rT
For power-loss calculations only (TVJ =125℃)
TVJ =TVJM
0.9
2
mΩ
VGT
TVJ =25℃ , VD =6V
3
V
IGT
TVJ =25℃ , VD =6V
150
mA
VGD
TVJ =125℃ , VD =2/3VDRM
0.25
V
IGD
TVJ =125℃ , VD =2/3VDRM
6
mA
IL
TVJ =25℃ , RG = 33 Ω
300
600
mA
IH
TVJ =25℃ , VD =6V
150
250
tgd
TVJ =25℃, IG=1A, diG/dt=1A/us
1
mA
us
tq
TVJ =TVJM
100
us
VTO
Document Number: MSTC110
Sep.06,2013
www.smsemi.com
2
MSTC110
Performance Curves
200
200
W
rec.120
A
sin.180
DC
150
DC
160
rec.60
120
rec.30
sin.180
100
rec.120
80
rec.60
50
rec.30
40
PTAV
ITAVM
0
0
ITAV
50
100
A 150
0
0
Fig1. Power dissipation
50
100
2500
Zth(j-S)
℃/ W
Zth(j-C)
0.25
0.001
t 0.01
0.1
1
10
S 100
50HZ
A
1250
0
Fig3. Transient thermal impedance
10
100
ms 1000
Fig4. Max Non-Repetitive Forward Surge
Current
300
A
℃ 130
Fig2.Forward Current Derating Curve
0.50
0
Tc
150 ℃
Typ.
125℃
200
max.
100
25℃
IT
0
0
VTM
0.5
1.0
1.5
V 2.0
Fig5. Forward Characteristics
Document Number: MSTC110
Sep.06,2013
www.smsemi.com
3
MSTC110
100
1/2·MSCT110
V
20V;20Ω
15
10
10
50
W
(8
VGT
0W
(0
m
.5
m
s)
0W
(0
.1
m
s)
s)
∧
1
VG
Tvj
IGT
VGD125℃
0.1
1.1 0.001
PG(tp)
-40℃
25℃
125℃
IGD125℃
IG
0.01
0.1
1
10
A 100
Fig6. Gate trigger Characteristics
Package Outline Information
CASE: T1
×
Dimensions in mm
Document Number: MSTC110
Sep.06,2013
www.smsemi.com
4
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