NJ6N65 POWER MOSFET 6.2A 650V N-CHANNEL POWER MOSFET DESCRIPTION The NJ6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. FEATURES 1 TO-220 1 * VDS = 650V * ID = 6.2A * RDS(ON) = 1.7 ohm@VGS = 10V * Ultra low gate charge (typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 10pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness TO-220F 1 TO-251 SYMBOL 1 TO-252 ORDERING INFORMATION Ordering Number Package NJ6N65-LI NJ6N65-BL NJ6N65F-LI NJ6N65A-LI NJ6N65D-TR NJ6N65D-LI Note: Pin Assignment: G: Gate TO-220 TO-220 TO-220F TO-251 TO-252 TO-252 D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tape Box Bulk Tube Tube Tape Ree Tube NJ6N65 POWER MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 6.2 A Continuous Drain Current ID 6.2 A Pulsed Drain Current (Note 2) IDM 24.8 A 440 Single Pulsed 6N65 EAS mJ Avalanche Energy (Note 3) 6N65-P 180 Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 ns 125 W TO-220 Power Dissipation TO-220F PD 40 W TO-251/TO-252 55 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 14mH, IAS = 6A, VDD = 90V, RG = 25 ȍ, Starting TJ = 25°C 4. ISD 6.2A, di/dt 200A/ȝs, VDD BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220 TO-220F TO-251/TO-252 TO-220 TO-220F TO-251/TO-252 SYMBOL șJA șJC RATING 62.5 62.5 110 1.0 3.2 2.27 UNIT °C/W °C/W °C/W °C/W °C/W °C/W NJ6N65 POWER MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS MIN TYP MAX UNIT VGS = 0V, ID = 250ȝA 650 V VDS = 650V, VGS = 0V 10 ȝA VGS = 30V, VDS = 0V 100 nA Forward Gate- Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V -100 nA Breakdown Voltage TemperatureʳCoefficient ϦBVDSS/ƸTJ ID=250ȝA, Referenced to 25°C 0.53 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250ȝA 2.0 4.0 V 1.1 1.7 ȍ 6N65 Static Drain-Source On-State VGS = 10V, ID = 3.1A RDS(ON) Resistance 6N65-P 1.4 2 ȍ DYNAMIC CHARACTERISTICS 800 1000 pF 6N65 Input Capacitance CISS 6N65-P 770 1000 pF 95 120 pF 6N65 VDS=25V, VGS=0V, Output Capacitance COSS f=1.0 MHz 6N65-P 70 120 pF 18 25 pF 6N65 Reverse Transfer Capacitance CRSS 6N65-P 10 25 pF SWITCHING CHARACTERISTICS 20 50 ns Turn-On Delay Time tD(ON) 100 120 ns 6N65 Turn-On Rise Time tR 6N65-P 70 120 ns VDD=325V, ID =6.2A, RG =25ȍ (Note 1, 2) Turn-Off Delay Time tD(OFF) 40 90 ns 6N65 120 150 ns Turn-Off Fall Time tF 6N65-P 80 150 ns 20 25 nC Total Gate Charge QG VDS=520V, ID=6.2A, Gate-Source Charge QGS 4.9 nC VGS=10V (Note 1, 2) Gate-Drain Charge QGD 9.4 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 6.2 A 1.4 V Maximum Continuous Drain-Source Diode IS 6.2 A Forward Current Maximum Pulsed Drain-Source Diode ISM 24.8 A Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 6.2 A, 290 ns dIF/dt = 100 A/ȝs (Note 1) Reverse Recovery Charge QRR 2.35 ȝC Notes: 1. Pulse Test: Pulse width 300ȝs, Duty cycle 2% 2. Essentially independent of operating temperature NJ6N65 POWER MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS Same Type as D.U.T. VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms NJ6N65 POWER MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit Time Unclamped Inductive Switching Waveforms ʳʳʳʳʳʳ ʳʳʳʳʳʳʳʳʳʳʳʳʳ Drain Current,ID (A) Drain Current, ID (A) Drain Current,ID (μA) Drain Current,ID (μA) NJ6N65 POWER MOSFET TYPICAL CHARACTERISTICS