ON NVATS5A113PLZT4G Power mosfet Datasheet

NVATS5A113PLZ
Power MOSFET
60 V, 29.5 mΩ, 38 A, P-Channel
Automotive Power MOSFET designed for compact and efficient designs and
including high thermal performance.
AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive
applications.
Features
 Low On-Resistance
 High Current Capability
 100% Avalanche Tested
 AEC-Q101 qualified and PPAP capable
ATPAK package is pin-compatible with DPAK (TO-252)
 Pb-Free, Halogen Free and RoHS compliance
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VDSS
RDS(on) Max
29.5 mΩ @ 10 V
38 mΩ @ 4.5 V
60 V
ELECTRICAL CONNECTION
P-Channel
2, 4
1
1 : Gate
2 : Drain
3 : Source
4 : Drain
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Operating Junction and
Storage Temperature
38 A
44 mΩ @ 4 V
Typical Applications
 Reverse Battery Protection
 Load Switch
 Automotive Front Lighting
 Automotive Body Controllers
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PW  10 s, duty cycle  1%
Power Dissipation
Tc = 25C
ID Max
Symbol
VDSS
VGSS
ID
3
Value
60
20
38
Unit
V
V
A
IDP
114
A
PD
60
W
55 to +175
C
Tj, Tstg
4
1 2
3
ATPAK
MARKING
Avalanche Energy (Single Pulse) (Note 2)
EAS
95
mJ
Avalanche Current (Note 3)
IAV
18
A
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : VDD = 10 V, L = 500 H, IAV = 18 A
3 : L ≤ 500 H, Single pulse
ORDERING INFORMATION
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Unit
Junction to Case Steady State (Tc = 25C)
RJC
2.5
C/W
Junction to Ambient (Note 4)
RJA
80.1
C/W
See detailed ordering and shipping
information on page 6 of this data sheet.
2
Note 4 : Surface mounted on FR4 board using a 130 mm , 1 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2016
June 2016 - Rev. 0
1
Publication Order Number :
NVATS5A113PLZ/D
NVATS5A113PLZ
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 5)
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
IDSS
ID = 1 mA, VGS = 0 V
Zero-Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
1
A
Gate to Source Leakage Current
IGSS
VGS = 16 V, VDS = 0 V
10
A
Gate Threshold Voltage
VGS(th)
VDS = 10 V, ID = 1 mA
2.6
V
Forward Transconductance
gFS
VDS = 10 V, ID = 18 A
37
ID = 18 A, VGS = 10 V
22.5
29.5
m
ID = 9 A, VGS = 4.5 V
27
38
m
ID = 5 A, VGS = 4 V
29
44
m
Static Drain to Source On-State
Resistance
RDS(on)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Conditions
Value
Parameter
min
typ
60
See Fig.1
VDS = 30 V, VGS = 10 V, ID = 35 A
Unit
V
1.2
2,400
VDS = 20 V, f = 1 MHz
max
S
pF
250
pF
195
pF
15
ns
125
ns
250
ns
200
ns
55
nC
7.5
nC
12
nC
VSD
IS = 35 A, VGS = 0 V
Forward Diode Voltage
V
0.98
1.5
Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Switching Time Test Circuit
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NVATS5A113PLZ
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3
NVATS5A113PLZ
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4
NVATS5A113PLZ
PACKAGE DIMENSIONS
unit : mm
DPAK (Single Gauge) / ATPAK
CASE 369AM
ISSUE O
4
2
3
RECOMMENDED
SOLDERING FOOTPRINT
6.5
1 : Gate
2 : Drain
1.5
2
4 : Drain
6.7
3 : Source
1.6
1
2.3
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5
2.3
NVATS5A113PLZ
ORDERING INFORMATION
Device
NVATS5A113PLZT4G
Marking
Package
Shipping (Qty / Packing)
ATP113
DPAK(Single Gauge) / ATPAK
(Pb-Free / Halogen Free)
3,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the NVATS5A113PLZ is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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