UTC MJE13009L-TA3-T Switchmode series npn switchmode series npn transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MJE13009
NPN SILICON TRANSISTOR
SWITCHMODE SERIES NPN
SILICON POWER
TRANSISTORS
1
TO-3P
DESCRIPTION
The MJE13009 is designed for high–voltage, high–speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V switch mode applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
FEATURES
1
TO-220
1
* VCEO 400 V and 300 V
* Reverse Bias SOA with Inductive Loads @ TC = 100℃
* Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100℃
tc @ 8 A, 100℃ is 120 ns (Typ).
* 700 V Blocking Capability
* SOA and Switching Applications Information.
TO-220F
*Pb-free plating product number:MJE13009L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MJE13009-TA3-T
MJE13009L-TA3-T
MJE13009-TF3-T
MJE13009L-TF3-T
MJE13009-T3P-T
MJE13009L-T3P-T
Package
TO-220
TO-220F
TO-3P
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
MJE13009L-TA3-T
(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TA3: TO-220, TF3: TO-220F, T3P: TO-3P
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R203-024,D
MJE13009
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current
Base Current
Emitter Current
Continuous
Peak*
Continuous
Peak*
Continuous
SYMBOL
VCEO
VCBO
IEBO
IC
ICM
IB
IBM
IE
RATINGS
400
700
9
12
24
6
12
18
IEM
36
Peak*
Total Power Dissipation @ Ta = 25℃
Derate above 25℃
Total Power Dissipation @ TC = 25℃
Derate above 25℃
PD
PD
UNIT
V
V
V
A
A
A
2
16
100
800
W
mW/℃
W
mW/℃
℃
℃
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-40 ~ +150
Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
SYMBOL
θJA
θJC
RATINGS
54
4
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)
PARAMETER
*OFF CHARACTERISTICS
Collector- Emitter Sustaining Voltage
Collector Cutoff Current
VCBO=Rated Value
Emitter Cutoff Current
*ON CHARACTERISTICS
DC Current Gain
SYMBOL
VCEO
TEST CONDITIONS
TYP
MAX UNIT
IEBO
IC = 10mA, IB = 0
VBE(OFF) = 1.5Vdc
VBE(OFF) = 1.5Vdc, TC = 100℃
VEB = 9Vdc, IC = 0
hFE1
IC = 5A,VCE = 5V
40
IC = 8A,VCE = 5V
30
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
IC = 8A, IB = 1.6A, TC = 100℃
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 8A, IB = 1.6A, TC = 100℃
1
1.5
3
2
1.2
1.6
V
V
V
V
V
V
1.5
V
ICBO
hFE 2
Current-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
DYNAMIC CHARACTERISTICS
Transition frequency
fT
IC = 500mA, VCE = 10V, f = 1MHz
Output Capacitance
Cob
VCB = 10V, IE = 0, f = 0.1MHz
SWITCHING CHARACTERISTICS (Resistive Load, Table 1)
Delay Time
tDLY
VCC = 125Vdc, IC = 8A
Rise Time
tR
IB1 = IB2 = 1.6A, tP = 25µs
Storage Time
tS
Duty Cycle ≤1%
Fall Time
tF
Inductive Load, Clamped (Table 1, Figure 13)
Voltage Storage Time
tS
IC=8A, Vclamp=300V, IB1=1.6A
VBE(OFF) = 5V, TC = 100℃
Crossover Time
tC
*Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%
UNISONIC TECHNOLOGIES CO., LTD
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MIN
400
V
1
5
1
4
mA
mA
MHz
pF
180
0.06
0.45
1.3
0.2
0.1
1
3
0.7
µs
µs
µs
µs
0.92
0.12
2.3
0.7
µs
µs
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QW-R203-024,D
MJE13009
NPN SILICON TRANSISTOR
TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+5V
VCC
33
1N4933
+125V
MJE210
TEST CIRCUITS
0.001μF
PW
2N2222
1k
+5V
RC
D.U.T.
47
NOTE
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
51
SCOPE
RB
D1
MJE200
-4.0V
–VBE(off)
GAP for 200 µH/20 A
Lcoil = 200 µH
VCC = 20 V
Vclamp = 300 Vdc
VCC = 125 V
RC = 15 Ω
D1 = 1N5820 or Equiv.
RB = Ω
+10V
OUTPUT WAVEFORMS
TEST WAVEFORMS
TUT
100
1/2W
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
*SELECTED FOR . 1 kV
VCE
2N2905
270
Vclamp
5.1k
IB
1k
1N4933
CIRCUIT VALUES
MR826*
IC
RB
1k
0.02μF
L
33 1N4933
5V
DUTY CYCLE ≤ 10% 68
tR, tF ≤ 10 ns
RESISTIVE SWITCHING
25 µs
tF CLAMPED
IC
tF UNCLAMPED 9 t2
ICM
t1 ADJUSTED TO
OBTAIN IC
t
t1
t1≈
tF
Lcoil (ICM)
VCC
VCE
V CEM
TIME
V clamp
t2≈
Lcoil (ICM)
V clamp
t2
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0
Test Equipment
Scope–Tektronics
475 or Equivalent
-8V
tR, tF < 10 ns
Duty Cycle = 1.0%
RB and RC adjusted
for desired IB and IC
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MJE13009
NPN SILICON TRANSISTOR
TABLE 2. APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS
CIRCUIT
LOAD LINE DIAGRAMS
VOUT
Collector Current
VCC
TURN–ON (FORWARD BIAS) SOA
tON ≤ 10 ms
DUTY CYCLE ≤ 10%
PD = 4000 W 2
24A
SERIES SWITCHING
REGULATOR
TIME DIAGRAMS
IC
TC = 100°C
350V
TURN–OFF (REVERSE BIAS) SOA
1.5 V ≤ VBE(off) ≤ 9.0 V
DUTY CYCLE ≤ 10%
12A
TURN–ON
TIME
VCE
VCC
TURN–OFF
+
VCC 400V 1
700V
1
COLLECTOR VOLTAGE
RINGING CHOKE
INVERTER
VOUT
N
Collector Current
VCC
TURN–OFF
Collector Current
VCE
V CC+
VCC
700V 1
t
COLLECTOR VOLTAGE
TURN–ON (FORWARD BIAS) SOA
tON ≤ 10 ms
DUTY CYCLE ≤ 10%
IC
tOFF
tON
PD = 4000 W 2
350V
TC = 100°C
12A
TURN–ON
t
TURN–OFF (REVERSE BIAS) SOA
1.5 V ≤ VBE(off) ≤ 9.0 V
DUTY CYCLE ≤ 10%
TURN–OFF
+
t
LEAKAGE SPIKE
N(VO)
400V 1
24A
VCC
TURN–OFF (REVERSE BIAS) SOA
1.5 V ≤ VBE(off) ≤ 9.0 V
DUTY CYCLE ≤ 10%
TURN–ON
VCC+N(VOUT )
VOUT
tOFF
tON
350V
12A
t
IC
PD = 4000 W 2
TC = 100°C
+ VCC
PUSH–PULL
INVERTER/CONVERTER
TIME
TURN–ON (FORWARD BIAS) SOA
tON ≤ 10 ms
DUTY CYCLE ≤ 10%
24A
t
VCE
2 VCC
2 VCC
VCC
VCC
700V
400V 1
1
t
COLLECTOR VOLTAGE
SOLENOID DRIVER
Collector Current
VCC
SOLENOID
IC
TURN–ON (FORWARD BIAS) SOA
tON ≤ 10 ms
DUTY CYCLE ≤ 10%
24A
TC = 100°C
TURN–OFF
TURN–OFF (REVERSE BIAS) SOA
1.5 V ≤ VBE(off) ≤ 9.0 V
DUTY CYCLE ≤ 10%
2 VCC
TURN–ON
VCC
400V 1
V CE
VCC
700V 1
COLLECTOR VOLTAGE
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tOFF
t
350V
12A
+
tON
PD = 4000 W 2
t
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QW-R203-024,D
MJE13009
NPN SILICON TRANSISTOR
TABLE 3. TYPICAL INDUCTIVE SWITCHING PERFORMANCE
IC(A)
3
5
8
12
TC(℃)
25
100
25
100
25
100
25
100
tsv(ns)
770
1000
630
820
720
920
640
800
trv(ns)
100
230
72
100
55
70
20
32
tfi(ns)
150
160
26
55
27
50
17
24
tti(ns)
200
200
10
30
2
8
2
4
tc(ns)
240
320
100
180
77
120
41
54
SWITCHING TIME NOTES
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and
voltage
waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total switching time. For this reason, the following new terms
have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% VCEM
trv = Voltage Rise Time, 10–90% VCEM
tfi = Current Fall Time, 90–10% ICM
tti = Current Tail, 10–2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the turn–off waveforms is shown in Figure 13 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN–222:
PSWT = 1/2 VCCIC(tc) f
Typical inductive switching waveforms are shown in Figure 14. In general, trv + tfi ≈ tc. However, at lower test
currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25℃ and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are
guaranteed at 100℃.
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QW-R203-024,D
MJE13009
NPN SILICON TRANSISTOR
TYPICAL CHARATERISTICS
Figure 2. Reverse Bias Switching Safe Operating Area
Figure 1. Forward Bias Safe Operating Area
14
10μs
20
10
5
TC = 25℃
10
100μs
1ms
2
dc
1
0.5
THERMAL LIMIT
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
0.2
0.1
0.05
12
Collector, IC (A)
Collector Current, IC (A)
100
50
TC ≤ 100℃
IB1 = 2.5 A
8
6
VBE(OFF) = 9V
4
5V
2
0.02
0.01
3V
1.5V
0
5
7 10
20 30 50 70 100
200 300
Collector –Emitter Voltage, VCE (V)
500
0
100 200
300 400 500 600 700
Collector –Emitter Clamp Voltage, VCBO (V)
800
Figure 3. Forward Bias Power Derating
1
Second Breakdown
Derating
0.6
Thermal
Derating
0.4
0.2
0
20
60
40
80
100
120
140
160
Case Temperature, TC (°C)
Figure 4. Typical Thermal Response [Zθ JC(t)]
Transient Thermal Resistance
(Normalized), r(t)
Power Derating Factor
0.8
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC–VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of Figure 1 is based on TC = 25℃; TJ(pk) is variable
depending on power level. Second breakdown pulse limits are
valid for duty cycles to 10% but must be derated when TC ≥ 25℃.
Second breakdown limitations do not derate the same as thermal
limitations . Allowable current at the voltages shown on Figure 1
may be found at any case temperature by using the appropriate
curve on Figure 3.
TJ(pk) may be calculated from the data in Figure 4. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed
by second breakdown. Use of reverse biased safe operating
area data (Figure 2) is discussed in the applications information
section.
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
P (pk)
ZθJC (t) = r(t) θJC
θJC = 1.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) – TC = P(pk) Zθ JC(t)
Duty Cycle, D = t1/t2
0.05
0.07
0.05
0.02
0.03
0.02
0.01
0.01
0.01
Single Pulse
0.02
0.05
0.1
0.2
0.5
1
5
2
Time, t (ms)
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10
20
50
100
200
500
1.0k
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QW-R203-024,D
MJE13009
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS (Cont.)
Figure 6. Collector Saturation Region
Figure 5. DC Current Gain
50
Collector–Emitter Voltage, VCE (V)
30
DC Current Gain, hF E
2
VCE = 5V
TJ = 150℃
TJ = 25℃
20
10
7
5
0.2 0.3
0.5 0.7 1
2
3
5
7
10
IC = 12A
1.6
IC= 3A
IC = 1A
1.2
0.8
0.4
TJ = 25℃
0
0.050.07 0.1
20
IC = 5A IC = 8A
Collector Current, IC (A)
0.2 0.3
0.5 0.7 1
2
3
5
Base Current, IB (A)
Figure 7. Base–Emitter Saturation Voltage
Figure 8. Collector–Emitter Saturation Voltage
0.7
1.4
IC/IB = 3
IC/IB = 3
0.6
1.2
TJ = 150℃
Voltage, V (V)
Voltage, V (V)
0.5
1
0.8
TJ = 25℃
0.3
0.2
TJ = 150℃
0.6
0.4
TJ = 25℃
0.1
0.4
0.2 0.3
0.5 0.7 1
2 3
5
Collector Current, IC (A)
7 10
0
0.2 0.3
20
Figure 9. Collector Cutoff Region
4k
2k
1k
TJ = 150℃
Capacitance, C (pF)
Collector Current, IC (mA)
VCE = 250V
125℃
100℃
10
75℃
50℃
1
25℃
0.1
-0.4
7 10
REVERSE
FORWARD
-0.2
0
+0.2
+0.4
Base–Emitter Voltage, V BE (V)
+0.6
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20
Figure 10. Capacitance
10k
100
0.5 0.7 1
2 3
5
Collector Currnet, IC (A)
TJ = 25℃
Cib
1k
800
600
400
200
Cob
100
80
60
40
0.1 0.2 0.5 1 2 5 10 20 50 100
Reverse Voltage, VR (V)
200
500
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QW-R203-024,D
MJE13009
NPN SILICON TRANSISTOR
■ RESISTIVE SWITCHING PERFORMANCE
Figure 11. Turn–On Time
1k
700
Figure 12. Turn–Off Time
2k
VCC = 125V
IC/IB = 5
TJ = 25℃
tS
1k
700
300
200
Time, t (ns)
Time, t (ns)
500
tR
100
VCC = 125V
IC/IB = 5
TJ = 25℃
500
300
200
tF
tDLY @ VBE(OFF ) = 5V
70
50
0.2 0.3
0.5 0.7 1
2
3
5
7
10
100
0.2 0.3
20
0.5 0.7 1
2
5
7
10
20
Collector Crrent, IC (A)
Collector Current, IC (A)
Figure 13. Typical Inductive Switching Waveforms
(at 300V and 12A with IB1 = 2.4A and VBE(off) = 5V)
CURRENT 2 A/DIV
V CE
VOLTAGE 50 V/DIV
IC
IC
VCE
TIME 20 ns/DIV
U TC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
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