Diodes DMG8N65SCT N-channel enhancement mode mosfet Datasheet

DMG8N65SCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON)
Package
ID
TC = +25°C

Low Input Capacitance
High BVDSS Rating for Power Application
1.3Ω@VGS = 10V
TO220AB
(Type TH)

8A

Low Input/Output Leakage

Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)
BVDSS
650V
Features
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high-efficiency power management
applications.
Mechanical Data

Case: TO220AB (Type TH)

Case Material: Molded Plastic, “Green” Molding Compound,
Applications
UL Flammability Classification Rating 94V-0

Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208

Motor Control

Backlighting


Terminal Connections: See Diagram Below
DC-DC Converters


Weight: 1.85 grams (Approximate)
Power Management Functions
TO220AB (Type TH)
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Part Number
DMG8N65SCT
Notes:
Case
TO220AB (Type TH)
Packaging
50 Pieces/Tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
=Manufacturer’s Marking
8N65SCT = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 17 = 2017)
WW or WW = Week Code (01 to 53)
DMG8N65SCT
Document number: DS38402 Rev. 2 - 2
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January 2017
© Diodes Incorporated
DMG8N65SCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Continuous Drain Current VGS = 10V
TC = +25°C
TC = +100°C
ID
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 60mH (Note 7)
Avalanche Energy, L = 60mH (Note 7)
Peak Diode Recovery dv/dt
IS
IDM
IAS
EAS
dv/dt
Value
650
±30
8.0
3.8
12
12
3.6
389
5
Unit
V
V
A
A
A
A
mJ
V/ns
Thermal Characteristics
Characteristic
Symbol
TC = +25°C
TC = +100°C
Total Power Dissipation
Value
125
50
54
1
PD
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
RJA
RJC
TJ, TSTG
Unit
W
°C/W
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
650






1
100
V
µA
nA
VGS = 0V, ID = 250µA
VDS = 650V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS(TH)
RDS(ON)
VSD
2


3
0.9
0.87
4
1.3
1.5
V
Ω
V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4A
VGS = 0V, IS = 8A
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd













1,217
115
12
1.24
30
4.8
13.3
23
46
115
52
296
2.7













pF
VDS = 25V, f = 1.0MHz,
VGS = 0V
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDD = 520V, ID =8A,
VGS = 10V
ns
VDD = 450V, RG = 25Ω, ID =8A,
VGS = 10V
ns
µC
di/dt = 100A/μs, VDS = 100V,
IF = 8A
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Test Condition
5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
DMG8N65SCT
Document number: DS38402 Rev. 2 - 2
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DMG8N65SCT
9.0
5
VGS = 10.0V
VGS = 8.0V
VGS = 6.0V
7.0
VDS = 10V
VGS=5.0V
6.0
VGS = 4.5V
5.0
4.0
3.0
2.0
VGS = 3.5V
1.0
4
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
8.0
3
2
VGS = 4.0V
-55℃
0
0
2
4
6
8
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
1.4
1.2
1
0.8
VGS = 10V
0.6
0.4
0.2
0
1
2
3
4
5
6
ID, DRAIN-SOURCE CURRENT (A)
0
10
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
25℃
150℃
VGS = 3.8V
0.0
7
6
4
2
ID = 4A
0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
125℃
2
85℃
1.5
25℃
-55℃
0
0
15
20
25
30
2.5
2
1.5
1
VGS = 10V, ID = 4A
0.5
0
2
3
4
5
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
Document number: DS38402 Rev. 2 - 2
10
3
1
DMG8N65SCT
5
Figure 4. Typical Transfer Characteristic
150℃
0.5
8
VGS, GATE-SOURCE VOLTAGE (V)
VGS = 10V
1
2
3
4
5
6
7
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
8
8
3
2.5
1
10
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
85℃
125℃
1
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-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
January 2017
© Diodes Incorporated
DMG8N65SCT
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
3
2
1
VGS = 10V, ID = 4A
0
-50
-25
0
25
50
75
100
125
5
4
ID = 1mA
3
ID = 250μA
2
1
0
150
-50
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
10
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
9
f=1MHz
VGS = 0V
CT, JUNCTION CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
-25
8
7
6
5
4
TJ = 85oC
3
TJ = 125oC
TJ = 25oC
2
TJ = 150oC
1
1000
Ciss
100
Coss
10
Crss
TJ = -55oC
1
0
0
0.3
0.6
0.9
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
0
1.2
10
20
40 60 80 100 120 140 160 180 200
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
100
RDS(ON) Limited
PW =1µs
PW =10µs
ID, DRAIN CURRENT (A)
VGS (V)
8
6
4
VDS = 520V, ID = 8A
10
1
PW =100µs
PW =1ms
PW =10ms
PW =100ms
PW =1s
TJ(Max) = 150℃ TC = 25℃
Single Pulse
DUT on Infinite Heatsink
VGS= 10V
0.1
2
0.01
0
0
5
10
15
Qg (nC)
20
25
30
Figure 11. Gate Charge
DMG8N65SCT
Document number: DS38402 Rev. 2 - 2
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1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
1000
January 2017
© Diodes Incorporated
DMG8N65SCT
r(t), TRANSIENT THERMAL RESISTANCE
1
D=0.5
D=0.3
D=0.9
0.1
D=0.7
D=0.1
D=0.05
D=0.02
0.01
D=0.01
RθJC(t) = r(t) * RθJC
RθJC = 1℃/W
Duty Cycle, D = t1 / t2
D=0.005
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
t1, PULSE DURATION TIME (sec)
1
10
Figure 13. Transient Thermal Resistance
DMG8N65SCT
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DMG8N65SCT
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO220AB (Type TH)
Eb
A
Ø P
A1
Q
H1
01
E
E2b
E2a
D
D2a D2
D1
A2
E2
01
02
L1
b2
b
L
C1
e
02(2x)
e1
C
Ea
DMG8N65SCT
Document number: DS38402 Rev. 2 - 2
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TO220AB (Type TH)
Dim
Min
Max
Typ
A
4.27
4.87
4.57
A1
1.12
1.42
1.27
A2
2.39
2.99
2.69
b
0.70
1.01
0.81
b2
1.17
1.50
1.27
c
0.30
0.53
0.38
c1
0.38
0.72
0.56
D
14.60 15.40 15.00
D1
8.40
9.00
8.70
D2
5.33
6.63
6.33
D2a
4.54
5.84
5.54
e
2.54 BSC
e1
5.08 BSC
E
9.88
10.50 10.16
Ea
9.90
10.45 10.10
Eb
9.90
10.65 10.25
E2
7.06
8.36
8.06
E2a
6.67
7.97
7.67
E2b
4.94
6.24
5.94
H1
5.70
6.65
6.30
L
13.00 13.80 13.40
L1
4.10
3.75
Q
2.50
2.99
2.74
ØP
3.70
3.99
3.84
θ1
4°
10°
7°
θ2
0°
6°
3°
All Dimensions in mm
January 2017
© Diodes Incorporated
DMG8N65SCT
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DMG8N65SCT
Document number: DS38402 Rev. 2 - 2
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January 2017
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