Infineon IPDD60R102G7 600v coolmosâ ¢ g7 power transistor Datasheet

IPDD60R102G7
MOSFET
600VCoolMOS™G7PowerTransistor
PG-HDSOP-10-1
TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof
theC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityand
theimprovedthermalpropertiesoftheDDPAKpackagetoenablea
possibleSMDsolutionforhighcurrenttopologiessuchasPFCupto3kW.
10
9
Pin 1
Features
•C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.
•DDPAKpackagehasinbuilt4thpinKelvinSourceconfigurationandlow
parasiticsourceinductance(~3nH).
•DDPAKpackageisMSL1compliant,totalPb-free,haseasyvisual
inspectionleadsandisqualifiedforindustrialapplicationsaccordingto
JEDEC47/20/22.
•DDPAKSMDpackagecombinedwithleadfreedieattachprocess
enablesimprovedthermalperformance(Rth).
2
3
4
8
7
6
5
Drain
Pin 6-10
Gate
Pin 1
Driver
Source
Pin 2
Benefits
Power
Source
Pin 3,4,5
•C7GoldFOMRDS(on)*Qgis15%betterthanpreviousC7600Venabling
fasterswitchingleadingtohigherefficiency.
•PossibilitytoincreasseeconomiesofscalesbyusageinPFCandPWM
topologiesintheapplication.
•C7Goldcanreach50mΩinDDPAK115mm2footprint,whereasprevious
BICC7600Vwas40mΩin150mm2D2PAKfootprint.
•ReducingparasiticsourceinductancebyKelvinSourceimproves
efficiencybyfasterswitchingandeaseofuseduetolessringing.
•DDPAKpackageiseasytouseandhasthehighestqualitystandards.
•ImprovedthermalsenableSMDDDPAKpackagetobeusedinhigher
currentdesignsthanhasbeenpreviouslypossible.
Potentialapplications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS@Tj,max
650
V
RDS(on),max
102
mΩ
Qg,typ
34
nC
ID,pulse
66
A
ID,continuous @ Tj<150°C 32
A
Eoss@400V
4
µJ
Body diode di/dt
740
A/µs
Type/OrderingCode
Package
IPDD60R102G7
PG-HDSOP-10
Final Data Sheet
Marking
60R102G7
1
RelatedLinks
see Appendix A
Rev.2.0,2018-01-05
600VCoolMOS™G7PowerTransistor
IPDD60R102G7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.2.0,2018-01-05
600VCoolMOS™G7PowerTransistor
IPDD60R102G7
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
23
15
A
TC=25°C
TC=100°C
-
66
A
TC=25°C
-
-
78
mJ
ID=4.4A; VDD=50V; see table 10
EAR
-
-
0.39
mJ
ID=4.4A; VDD=50V; see table 10
Avalanche current, single pulse
IAS
-
-
4.4
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
120
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
139
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
Mounting torque
-
-
-
n.a.
Ncm -
IS
-
-
23
A
TC=25°C
Diode pulse current
IS,pulse
-
-
66
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
25
V/ns
VDS=0...400V,ISD<=6.7A,Tj=25°C
see table 8
Maximum diode commutation speed
dif/dt
-
-
740
A/µs
VDS=0...400V,ISD<=6.7A,Tj=25°C
see table 8
Insulation withstand voltage
VISO
-
-
n.a.
V
Vrms,TC=25°C,t=1min
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
Continuous diode forward current
2)
1)
Limited by Tj,max
Pulse width tp limited by Tj,max
3)
Identical low side and high side switch
2)
Final Data Sheet
3
Rev.2.0,2018-01-05
600VCoolMOS™G7PowerTransistor
IPDD60R102G7
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJC
-
-
0.9
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
62
°C/W device on PCB, minimal footprint
Thermal resistance, junction - ambient
RthJA
for SMD version
-
35
45
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
layer, 70µm thickness) copper area
°C/W
for drain connection and cooling.
PCB is vertical without air stream
cooling.
Tsold
-
-
260
°C
Reflow soldering temperature
Final Data Sheet
4
reflow MSL1
Rev.2.0,2018-01-05
600VCoolMOS™G7PowerTransistor
IPDD60R102G7
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3.5
4
V
VDS=VGS,ID=0.39mA
-
10
1
-
µA
VDS=600V,VGS=0V,Tj=25°C
VDS=600V,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.088
0.220
0.102
-
Ω
VGS=10V,ID=7.8A,Tj=25°C
VGS=10V,ID=7.8A,Tj=150°C
Gate resistance
RG
-
0.8
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
-
Gate threshold voltage
V(GS)th
3
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
1320
-
pF
VGS=0V,VDS=400V,f=250kHz
Output capacitance
Coss
-
27
-
pF
VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related1)
Co(er)
-
50
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time
related2)
Co(tr)
-
516
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
18
-
ns
VDD=400V,VGS=13V,ID=7.8A,
RG=5.3Ω;seetable9
Rise time
tr
-
5
-
ns
VDD=400V,VGS=13V,ID=7.8A,
RG=5.3Ω;seetable9
Turn-off delay time
td(off)
-
60
-
ns
VDD=400V,VGS=13V,ID=7.8A,
RG=5.3Ω;seetable9
Fall time
tf
-
4
-
ns
VDD=400V,VGS=13V,ID=7.8A,
RG=5.3Ω;seetable9
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
7
-
nC
VDD=400V,ID=7.8A,VGS=0to10V
Gate to drain charge
Qgd
-
12
-
nC
VDD=400V,ID=7.8A,VGS=0to10V
Gate charge total
Qg
-
34
-
nC
VDD=400V,ID=7.8A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.0
-
V
VDD=400V,ID=7.8A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
2)
Final Data Sheet
5
Rev.2.0,2018-01-05
600VCoolMOS™G7PowerTransistor
IPDD60R102G7
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=7.8A,Tj=25°C
305
-
ns
VR=400V,IF=7.8A,diF/dt=100A/µs;
see table 8
-
3.1
-
µC
VR=400V,IF=7.8A,diF/dt=100A/µs;
see table 8
-
22
-
A
VR=400V,IF=7.8A,diF/dt=100A/µs;
see table 8
Min.
Typ.
Max.
VSD
-
0.8
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
6
Rev.2.0,2018-01-05
600VCoolMOS™G7PowerTransistor
IPDD60R102G7
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
102
120
101
90
100
100 µs
1 ms
10 ms
10 µs
1 µs
DC
ID[A]
Ptot[W]
150
60
10-1
30
10-2
0
0
25
50
75
100
125
10-3
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
2
10
100 µs
10 µs
100
1 µs
1 ms
10 ms
1
10
0.5
DC
0.2
ID[A]
ZthJC[K/W]
100
10-1
0.1
10-1
0.05
0.02
0.01
single pulse
10-2
10-3
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
7
Rev.2.0,2018-01-05
600VCoolMOS™G7PowerTransistor
IPDD60R102G7
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
120
60
20 V
10 V
8V
100
20 V
10 V
8V
7V
50
6V
7V
40
ID[A]
ID[A]
80
60
6V
40
5.5 V
30
20
5V
5.5 V
20
10
4.5 V
5V
4.5 V
0
0
5
10
15
0
20
0
5
10
VDS[V]
15
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
0.40
6V
5.5 V
6.5 V
0.38
0.25
7V
0.23
10 V
0.36
0.21
20 V
0.34
0.19
0.32
0.17
RDS(on)[Ω]
RDS(on)[Ω]
20
VDS[V]
0.30
0.28
0.15
98%
0.13
typ
0.26
0.11
0.24
0.09
0.22
0.07
0.20
0
10
20
30
40
50
60
70
0.05
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=7.8A;VGS=10V
8
Rev.2.0,2018-01-05
600VCoolMOS™G7PowerTransistor
IPDD60R102G7
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
120
12
10
80
8
VGS[V]
ID[A]
25 °C
100
60
120 V
400 V
6
150 °C
40
4
20
2
0
0
2
4
6
8
10
0
12
0
10
VGS[V]
20
30
40
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=7.8Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
80
70
60
101
125 °C
50
IF[A]
EAS[mJ]
25 °C
40
30
100
20
10
10-1
0.0
0.5
1.0
1.5
0
25
50
VSD[V]
100
125
150
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=4.4A;VDD=50V
9
Rev.2.0,2018-01-05
600VCoolMOS™G7PowerTransistor
IPDD60R102G7
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
105
700
680
104
660
Ciss
10
3
C[pF]
VBR(DSS)[V]
640
620
102
Coss
600
101
580
Crss
10
0
560
540
-60
-20
20
60
100
140
180
10-1
0
100
200
Tj[°C]
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
6
5
Eoss[µJ]
4
3
2
1
0
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
10
Rev.2.0,2018-01-05
600VCoolMOS™G7PowerTransistor
IPDD60R102G7
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
11
ID
VDS
Rev.2.0,2018-01-05
600VCoolMOS™G7PowerTransistor
IPDD60R102G7
6PackageOutlines
PG-HDSOP-10-1
DOCUMENT NO.
Z8B00184263
DIMENSIONS
A
A1
A2
b
b2
c
D
D1
E
E1
e
N
H
L
Figure 1
Final Data Sheet
REVISION
01
MILLIMETERS
MIN.
MAX.
2.20
2.35
0.00
0.15
0.89
1.10
0.57
0.63
0.57
0.93
0.46
0.58
15.20
15.60
10.50
10.70
6.40
6.60
5.20
5.50
1.14
10
20.81
21.11
1.20
1.40
SCALE 5:1
0
1
2
3
4
5mm
EUROPEAN PROJECTION
ISSUE DATE
06.02.2017
Outline PG-HDSOP-10, dimensions in mm/inches
12
Rev.2.0,2018-01-05
600V CoolMOS™ G7 Power Transistor
IPDD60R102G7
7
Appendix A
Table 11
Related Links
• IFX CoolMOS TM G7 Webpage: www.infineon.com
• IFX CoolMOS TM G7 application note: www.infineon.com
• IFX CoolMOS TM G7 simulation model:
www.infineon.com
• IFX Design tools: www.infineon.com
Final Data Sheet
13
Rev. 2.0, 2018-01-05
600V CoolMOS™ G7 Power Transistor
IPDD60R102G7
Revision History
IPDD60R102G7
Revision: 2018-01-05, Rev. 2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2018-01-05
Release of final version
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBlade™,
EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, Infineon™,
ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™, POWERCODE™,
PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™,
SOLID FLASH™, SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Trademarks updated August 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
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Final Data Sheet
14
Rev. 2.0, 2018-01-05
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