Mitsubishi M5M5V208FP-10LL-W 2097152-bit (262144-word by 8-bit) cmos static ram Datasheet

MITSUBISHI LSIs
'97.3.21
M5M5V208FP,VP,RV,KV,KR
-70L-W , -85L -W, -10L-W , -12L-W ,
-70LL-W, -85LL-W, -10LL-W, -12LL-W
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
PIN CONFIGURATION (TOP VIEW)
The M5M5V208 is 2,097,152-bit CMOS static RAM organized as
262,144-words by 8-bit which is fabricated using high-performance
quadruple-polysilicon and double metal CMOS technology. The use
of thin film transistor(TFT) load cells and CMOS periphery results in a
high density and low power static RAM. The M5M5V208 is designed
for memory applications where high reliability, large storage, simple
interfacing and battery back-up are important design objectives.
The M5M5V208VP,RV,KV,KR are packaged in a 32-pin thin small
outline package which is a high reliability and high density surface
mount device(SMD).Two types of devices are available.
VP,KV(normal lead bend type package),RV,KR(reverse lead bend
type package). Using both types of devices, it becomes very easy to
design a printed circuit board.
A17 1
A16 2
A14 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
DQ1 13
DQ2 14
DQ3 15
(0V)GND 16
FEATURE
Type
Access Power supply current
time
Active Stand-by
(max)
(max)
(max)
M5M5V208FP,VP,RV,KV,KR-70L
70ns
M5M5V208FP,VP,RV,KV,KR-85L
85ns
M5M5V208FP,VP,RV,KV,KR-10L
100ns
M5M5V208FP,VP,RV,KV,KR-12L
120ns
M5M5V208FP,VP,RV,KV,KR-70LL
70ns
M5M5V208FP,VP,RV,KV,KR-85LL
85ns
M5M5V208FP,VP,RV,KV,KR-10LL
M5M5V208FP,VP,RV,KV,KR-12LL
100ns
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC(3V)
A15
S2
W
A13
A8
A9
A11
OE
A10
S1
DQ8
DQ7
DQ6
DQ5
DQ4
Outline 32P2M-A(FP)
60µA
(Vcc=3.6V)
27mA
(Vcc=3.6V)
10µ A
(Vcc=3.6V)
120ns
• Single 2.7 ~ 3.6V power supply
• W-version: operating temperature of -20 to +70°C
• No clocks, No refresh
• All inputs and outputs are TTL compatible.
• Easy memory expansion and power down by S1 & S2
• Data retention supply voltage=2.0V
• Three-state outputs: OR-tie capability
• OE prevents data contention in the I/O bus
• Common Data I/O
• Battery backup capability
• Small stand-by current · · · · · · · · · · 0.3µA(typ.)
PACKAGE
A11
A9
A8
A13
W
S2
A15
Vcc
A17
A16
A14
A12
A7
A6
A5
A4
APPLICATION
5
6
7
8
9
10
11
12
13
M5M5V208VP,KV
-W
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
S1
DQ8
DQ7
DQ6
DQ5
DQ4
GND
DQ3
DQ2
DQ1
A0
A1
A2
A3
Outline 32P3H-E(VP), 32P3K-B(KV)
A4
A5
A6
A7
A12
A14
A16
A17
Vcc
A15
16
15
A13
A8
A9
A11
4
3
S2
W
M5M5V208FP
: 32 pin 525 mil SOP
M5M5V208VP,RV : 32pin 8 X 20 mm2
TSOP
M5M5V208KV,KR : 32pin 8 X 13.4 mm2 TSOP
1
2
3
4
17
18
19
20
21
22
14
13
12
11
10
9
8
7
6
5
M5M5V208RV,KR
-W
2
1
23
24
25
26
27
28
29
30
31
32
A3
A2
A1
A0
DQ1
DQ2
DQ3
GND
DQ4
DQ5
DQ6
DQ7
DQ8
S1
A10
OE
Outline 32P3H-F(RV), 32P3K-C(KR)
Small capacity memory units
Battery operating system
Handheld communiation tools
MITSUBISHI
ELECTRIC
1
MITSUBISHI LSIs
'97.3.21
M5M5V208FP,VP,RV,KV,KR
-70L-W , -85L -W, -10L-W , -12L-W ,
-70LL-W, -85LL-W, -10LL-W, -12LL-W
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
FUNCTION
The operation mode of the M5M5V208 is determined by a
combination of the device control inputs S1, S 2, W and OE.
Each mode is summarized in the function table.
A write cycle is executed whenever the low level W
overlaps with the low level S1 and the high level S2. The
address must be set up before the write cycle and must be
stable during the entire cycle. The data is latched into a cell
on the trailing edge of W, S1 or S2, whichever occurs first,
requiring the set-up and hold time relative to these edge to
be maintained. The output enable OE directly controls the
output stage. Setting the OE at a high level,the output stage
is in a high-impedance state, and the data bus contention
problem in the write cycle is eliminated.
A read cycle is executed by setting W at a high level and
OE at a low level while S1 and S 2 are in an active state (S1
= L ,S2 = H).
When setting S1 at a high level or S2 at a low level, the
chips are in a non-selectable mode in which both reading
and writing are disabled. In this mode, the output stage is in
a high-impedance state, allowing OR-tie with other chips
and memory expansion by S1 or S2. The power supply
current is reduced as low as the stand-by current which is
specified as Icc3 or Icc4, and the memory data can be held
at +2V power supply, enabling battery back-up operation
during power failure or power-down operation in the nonselected mode.
FUNCTION TABLE
S1
S2
W
OE
Mode
DQ
Icc
X
L
X
X
Non selection
High-impedance
Standby
H
X
X
X
Non selection
High-impedance
Standby
L
H
L
X
Write
D IN
Active
L
H
H
L
Read
D OUT
Active
L
H
H
H
High-impedance
Active
BLOCK DIAGRAM
*
A4
A5
*
8
16
7
15
21
13
DQ1
22
14
23
15
DQ2
DQ3
25
17
26
18
27
19
A6
A7
6
14
5
13
A12
4
12
A14
A16
3
11
2
10
A17
A15
1
9
28
20
31
7
29
21
A0
12
20
A1
A2
11
19
10
18
A3
9
17
A10
23
31
A11
25
A9
A8
26
2
27
3
A13
28
4
262144 WORDS
X 8 BITS
512 ROWS
X 128 COLUMNS
X 32 BLOCKS
DQ4
DQ5
DQ6
DQ7
DQ8
CLOCK
GENERATOR
5
29
W
30
22
6
30
S1
S2
32
24
8
32
24
16
1
OE
VCC
(3V)
GND
(0V)
*Pin numbers inside dotted line show those of TSOP.
MITSUBISHI
ELECTRIC
2
MITSUBISHI LSIs
'97.3.21
M5M5V208FP,VP,RV,KV,KR
-70L-W , -85L -W, -10L-W , -12L-W ,
-70LL-W, -85LL-W, -10LL-W, -12LL-W
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Supply voltage
Vcc
VI
VO
Pd
Topr
Tstr
Conditions
Input voltage
Ratings
– 0.5*~4.6
– 0.5* ~ Vcc + 0.5
With respect to GND
Output voltage
Power dissipation
Operating temperature
Storage temperature
(Max 4.6)
0 ~ Vcc
700
– 20 ~ 70
– 65 ~150
Ta=25°C
Unit
V
V
V
mW
°C
°C
* –3.0V in case of AC ( Pulse width ≤ 30ns )
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
VIH
High-level input voltage
VIL
VOH1
VOH2
Low-level input voltage
High-level output voltage 1
High-level output voltage 2
VOL
II
IO
Low-level output voltage
Input current
Output current in off-state
Icc1
Icc2
Active supply current
(CMOS-level Input)
Active supply current
(TTL-level Input)
(Ta=– 20~70°C, Vcc= 2.7 ~ 3.6V, unless otherwise noted)
Stand-by current
Min
–0.3*
2.4
Vcc
-0.5V
IOH= –0.5mA
IOH= –0.05mA
IOL=2mA
VI=0 ~ Vcc
S1=VIH or S2=VIL or OE=VIH
VI/O=0 ~ Vcc
S1 ≤ 0.2V, S2≥ Vcc-0.2V,
other inputs ≤ 0.2V
or ≥ Vcc-0.2V,output-open
S1=VIL,S2=VIH,
other inputs=VIH or VIL
output-open
Stand-by current
Max
Vcc
+0.3V
0.6
V
V
V
0.4
±1
V
µA
±1
µA
20
25
f= 5MHz
10
13
f= 10MHz
22
27
f= 5MHz
12
15
-L -20 ~ +70°C
60
-20 ~ +70°C
2) S1 ≥ Vcc-0.2V,
S2 ≥ Vcc-0.2V
-LL -20 ~ +40°C
other inputs=0 ~ Vcc
10
S1=VIH or S2=VIL,other inputs=0 ~ Vcc
Unit
V
f= 10MHz
+25°C
Icc4
Typ
2.0
1) S2 ≤ 0.2V or
Icc3
Limits
Test conditions
1
0.3
mA
mA
µA
0.6
0.33
mA
* –3.0V in case of AC ( Pulse width ≤ 30ns )
CAPACITANCE
Symbol
CI
CO
Parameter
Input capacitance
Output capacitance
(Ta=– 20 ~ 70°C, Vcc= 2.7 ~ 3.6V, unless otherwise noted)
Limits
Test conditions
Unit
Typ
Min
Max
pF
VI=GND, VI=25mVrms, f=1MHz
7
pF
VO=GND,VO=25mVrms, f=1MHz
9
Note 1: Direction for current flowing into an IC is positive (no mark).
2: Typical value is for Vcc = 3V, Ta = 25°C
MITSUBISHI
ELECTRIC
3
MITSUBISHI LSIs
'97.3.21
M5M5V208FP,VP,RV,KV,KR
-70L-W , -85L -W, -10L-W , -12L-W ,
-70LL-W, -85LL-W, -10LL-W, -12LL-W
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
AC ELECTRICAL CHARACTERISTICS
(Ta =– 20 ~ 70°C, Vcc= 2.7 ~ 3.6V, unless otherwise noted )
1TTL
(1) MEASUREMENT CONDITIONS
.................................
Vcc
Input pulse level .............
Input rise and fall time .....
Reference level ...............
Output loads ...................
2.7 ~ 3.6V
VIH=2.2V,VIL=0.4V
5ns
VOH=VOL=1.5V
Fig.1,CL=30pF
CL=5pF (for ten,tdis)
Transition is measured ±500mV from steady
state voltage. (for ten,tdis)
DQ
CL
including
scope and JIG
Fig.1 Output load
(2) READ CYCLE
-70L,LL
Min Max
70
70
70
70
35
25
25
25
10
10
5
10
Limits
-85L,LL
-10L,LL
Min Max Min Max
85
100
85
100
85
100
85
100
45
50
30
35
30
35
30
35
10
10
10
10
5
5
10
10
-12L,LL
Min Max
120
120
120
120
60
40
40
40
10
10
5
10
-70L,LL
Min Max
tCW
Write cycle time
70
tw(W)
Write pulse width
55
tsu(A)
Address setup time
0
tsu(A-WH) Address setup time with respect to W 65
tsu(S1)
Chip select 1 setup time
65
tsu(S2)
Chip select 2 setup time
65
tsu(D)
Data setup time
30
th(D)
Data hold time
0
trec(W)
Write recovery time
0
tdis(W)
25
Output disable time from W low
tdis(OE) Output disable time from OE high
25
ten(W)
Output enable time from W high
5
ten(OE)
5
Output enable time from OE low
Limits
-85L,LL
-10L,LL
Min Max Min Max
85
100
60
75
0
0
70
85
70
85
70
85
35
40
0
0
0
0
30
35
30
35
5
5
5
5
-12L,LL
Min Max
120
85
0
100
100
100
45
0
0
40
40
5
5
Symbol
Parameter
tCR
ta(A)
ta(S1)
ta(S2)
ta(OE)
tdis(S1)
tdis(S2)
tdis(OE)
ten(S1)
ten(S2)
ten(OE)
tV(A)
Read cycle time
Address access time
Chip select 1 access time
Chip select 2 access time
Output enable access time
Output disable time after S1 high
Output disable time after S2 low
Output disable time after OE high
Output enable time after S1 low
Output enable time after S2 high
Output enable time after OE low
Data valid time after address
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(3) WRITE CYCLE
Symbol
Parameter
MITSUBISHI
ELECTRIC
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4
MITSUBISHI LSIs
'97.3.21
M5M5V208FP,VP,RV,KV,KR
-70L-W , -85L -W, -10L-W , -12L-W ,
-70LL-W, -85LL-W, -10LL-W, -12LL-W
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
(4) TIMING DIAGRAMS
Read cycle
tCR
A0~17
ta(A)
tv (A)
ta (S1)
S1
(Note 3)
S2
tdis (S1)
(Note 3)
tdis (S2)
(Note 3)
ta (S2)
(Note 3)
ta (OE)
ten (OE)
OE
tdis (OE)
(Note 3)
(Note 3)
ten (S1)
ten (S2)
DQ1~8
DATA VALID
W = "H" level
Write cycle (W control mode)
tCW
A0~17
tsu (S1)
S1
(Note 3)
(Note 3)
S2
tsu (S2)
(Note 3)
(Note 3)
tsu (A-WH)
OE
tsu (A)
tw (W)
trec (W)
W
tdis (W)
tdis (OE)
DQ1~8
ten (W)
ten(OE)
DATA IN
STABLE
tsu (D)
MITSUBISHI
ELECTRIC
th (D)
5
MITSUBISHI LSIs
'97.3.21
M5M5V208FP,VP,RV,KV,KR
-70L-W , -85L -W, -10L-W , -12L-W ,
-70LL-W, -85LL-W, -10LL-W, -12LL-W
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
Write cycle ( S1 control mode)
tCW
A0~17
tsu (A)
tsu (S1)
trec (W)
S1
S2
(Note 3)
(Note 3)
(Note 5)
W
(Note 4)
(Note 3)
tsu (D)
th (D)
(Note 3)
DATA IN
STABLE
DQ1~8
Write cycle (S2 control mode)
tCW
A0~17
S1
(Note 3)
(Note 3)
tsu (A)
tsu (S2)
trec (W)
S2
(Note 5)
W
(Note 4)
(Note 3)
DQ1~8
tsu (D)
th (D)
(Note 3)
DATA IN
STABLE
Note 3: Hatching indicates the state is "don't care".
4: Writing is executed while S2 high overlaps S1 and W low.
5: When the falling edge of W is simultaneously or prior to the falling edge of S1
or rising edge of S2, the outputs are maintained in the high impedance state.
6: Don't apply inverted phase signal externally when DQ pin is output mode.
MITSUBISHI
ELECTRIC
6
MITSUBISHI LSIs
'97.3.21
M5M5V208FP,VP,RV,KV,KR
-70L-W , -85L -W, -10L-W , -12L-W ,
-70LL-W, -85LL-W, -10LL-W, -12LL-W
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Vcc (PD)
VI (S1)
Power down supply voltage
Chip select input S1
Chip select input S2
VI (S2)
Icc (PD)
Power down supply current
(Ta = – 20 ~ 70°C, unless otherwise noted)
Test conditions
Min
2
2.0
Limits
Typ Max
0.2
Vcc = 3.0V
-L
S2 ≤ 0.2V or
S1 ≥ Vcc - 0.2V,S2 ≥ Vcc - 0.2V -LL
0.3
50
8
Unit
V
V
V
µA
(Note 7)
Note7: ICC (PD) = 0.5µA (Max.) in case of Ta = +25°C
(2) TIMING REQUIREMENTS
(Ta = – 20 ~ 70°C, unless otherwise noted )
Symbol
Parameter
tsu (PD)
Power down set up time
trec (PD)
Power down recovery time
Test conditions
Min
Limits
Typ Max
0
5
Unit
ns
ms
(3) POWER DOWN CHARACTERISTICS
S1 control mode
Vcc
t su (PD)
2.7V
2.7V
t rec (PD)
2.2V
2.2V
S1≥ Vcc - 0.2V
S1
S2 control mode
Vcc
t su (PD)
S2
2.7V
2.7V
0.2V
t rec (PD)
0.2V
S2 ≤ 0.2V
MITSUBISHI
ELECTRIC
7
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