IRF7316TRPbF-1
VDS
RDS(on) max
(@VGS = -10V)
-30
V
0.058
Ω
23
nC
-4.9
A
Qg (typical)
ID
(@TA = 25°C)
HEXFET® Power MOSFET
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
SO-8
Top View
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRF7316PbF-1
SO-8
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7316TRPbF-1
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Drain-Source Voltage
Gate-Source Voltage
TA = 25°C
TA = 70°C
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25°C
Maximum Power Dissipation
TA = 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Symbol
Maximum
VDS
V GS
-30
± 20
-4.9
-3.9
-30
-2.5
2.0
1.3
140
-2.8
0.20
-5.0
-55 to + 150
ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
1
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Symbol
Limit
Units
RθJA
62.5
°C/W
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IRF7316TRPbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
I GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
-1.0
Typ. Max. Units
Conditions
V
V GS = 0V, ID = -250µA
0.022 V/°C Reference to 25°C, ID = -1mA
0.042 0.058
V GS = -10V, ID = -4.9A
Ω
0.076 0.098
V GS = -4.5V, ID = -3.6A
V
V DS = V GS, ID = -250µA
7.7
S
V DS = -15V, I D = -4.9A
-1.0
V DS = -24V, VGS = 0V
µA
-25
V DS = -24V, VGS = 0V, TJ = 55°C
100
V GS = -20V
nA
-100
V GS = 20V
23
34
I D = -4.9A
3.8 5.7
nC V DS = -15V
5.9 8.9
V GS = -10V, See Fig. 10
13
19
V DD = -15V
13
20
I D = -1.0A
ns
34
51
R G = 6.0Ω
32
48
R D = 15Ω
710
V GS = 0V
380
pF
V DS = -25V
180
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
-2.5
-30
A
-0.78 -1.0
44
66
42
63
V
ns
nC
Conditions
D
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.7A, VGS = 0V
TJ = 25°C, IF = -1.7A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 35mH
RG = 25Ω, IAS = -2.8A.
ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
2
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October 16, 2014
IRF7316TRPbF-1
IRF7316PbF-1
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
10
-3.0V
20μs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
-3.0V
0.1
1
10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
-ISD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
20μs PULSE WIDTH
TJ = 150°C
A
1
10
-VDS, Drain-to-Source Voltage (V)
TJ = 25°C
TJ = 150°C
10
V DS = -10V
20μs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0
5.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
6.0
A
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
-VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
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October 16, 2014
A
1.4
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
RDS (on) , Drain-to-Source On Resistance (Ω)
IRF7316TRPbF-1
-4.9A
ID =-4.9A
1.5
1.0
0.5
0.0
-60 -40 -20
-10V
VGS =-10V
0
20
40
60
0.6
0.5
0.4
0.3
0.1
0
10
20
300
I D = -4.9A
0.04
0.00
3
6
9
12
-VGS , Gate -to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
15
A
EAS , Single Pulse Avalanche Energy (mJ)
0.12
0
A
Fig 6. Typical On-Resistance Vs. Drain
Current
0.16
0.08
30
-I D , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = -10V
0.0
80 100 120 140 160
TJ , Junction Temperature ( °C)
4
V GS = -4.5V
0.2
ID
-1.3A
-2.2A
BOTTOM -2.8A
TOP
250
200
150
100
50
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
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150
IRF7316TRPbF-1
IRF7316PbF-1
VGS = 0V
C, Capacitance (pF)
1200
20
f = 1 MHz
Ciss = Cgs + Cgd + Cds
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
800
Coss
600
400
Crss
200
0
1
ID = -4.9A
SHORTED
-VGS , Gate-to-Source Voltage (V)
1400
10
100
A
VDS =-15V
16
12
8
4
0
0
10
20
30
40
QG , Total Gate Charge (nC)
- V DS , Drain-to-Source Voltage (V)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
P DM
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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100
IRF7316TRPbF-1
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
5
H
E
1
6X
2
3
0.25 [.010]
4
A
e
e1
8X b
0.25 [.010]
A
INCHE S
MILLIMET ERS
MIN
MAX
MIN
A
.0532
.0688
1.35
1.75
MAX
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 B AS IC
e1
1.27 BASIC
.025 B AS IC
0.635 B AS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIME NS IONING & T OL ERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MIL LIMET E R
3. DIME NS IONS ARE S HOWN IN MILL IME T E RS [INCHE S ].
4. OUT L INE CONFORMS T O JE DEC OUT LINE MS -012AA.
5 DIME NS ION DOES NOT INCLUDE MOL D PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEE D 0.15 [.006].
6.46 [.255]
6 DIME NS ION DOES NOT INCLUDE MOL D PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEE D 0.25 [.010].
7 DIME NS ION IS T HE LENGT H OF LE AD FOR S OL DE RING T O
A S UB S T RAT E .
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE : T HIS IS AN IRF 7101 (MOS FET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-F REE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
6
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IRF7316TRPbF-1
IRF7316PbF-1
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
†
Qualification information
Industrial
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
RoHS compliant
SO-8
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
10/16/2014
Comments
• Corrected part number from" IRF7316PbF-1" to "IRF7316TRPbF-1" -all pages
• Removed the "IRF7316PbF-1" bulk part number from ordering information on page1
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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