IPD70R900P7S MOSFET 700VCoolMOSªP7PowerTransistor DPAK CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. tab 1 2 3 Drain Pin 2, Tab Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •Excellentthermalbehavior •IntegratedESDprotectiondiode •Lowswitchinglosses(Eoss) •Productvalidationacc.JEDECStandard Gate Pin 1 Source Pin 3 Benefits •Costcompetitivetechnology •Lowertemperature •HighESDruggedness •Enablesefficiencygainsathigherswitchingfrequencies •Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 700 V RDS(on),max 0.9 Ω Qg,typ 6.8 nC ID,pulse 12.8 A Eoss @ 400V 0.9 µJ V(GS)th,typ 3 V ESD class (HBM) 1C Type/OrderingCode Package IPD70R900P7S PG-TO 252-3 Final Data Sheet Marking 70S900P7 1 RelatedLinks see Appendix A Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPD70R900P7S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPD70R900P7S 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 6.0 3.5 A TC = 20°C TC = 100°C - 12.8 A TC=25°C - - 3.6 A measured with standard leakage inductance of transformer of 5µH dv/dt - - 100 V/ns VDS=0...400V Gate source voltage VGS -16 -30 - 16 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 30.5 W TC=25°C Operating and storage temperature Tj,Tstg -40 - 150 °C - Continuous diode forward current IS - - 4.1 A TC=25°C IS,pulse - - 12.8 A TC = 25°C dv/dt - - 1 V/ns VDS=0...400V,ISD<=IS,Tj=25°C Maximum diode commutation speed dif/dt - - 50 A/µs VDS=0...400V,ISD<=IS,Tj=25°C Insulation withstand voltage VISO - - n.a. V Vrms, TC=25°C, t=1min Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Application (Flyback) relevant avalanche current, single pulse3) IAS MOSFET dv/dt ruggedness 2) Diode pulse current 4) Reverse diode dv/dt 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction Values Min. Typ. Max. RthJC - - 4.1 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W Device on PCB, minimal footprint Thermal resistance, junction - ambient RthJA for SMD version - 35 45 Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer 70µm °C/W thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave- & reflow Tsold soldering allowed - - 260 °C reflow MSL3 1) Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5 Pulse width tp limited by Tj,max 3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7. 4) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPD70R900P7S 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.50 V VDS=VGS,ID=0.06mA - 10 1 - µA VDS=700V,VGS=0V,Tj=25°C VDS=700V,VGS=0V,Tj=150°C - - 1 µA VGS=20V,VDS=0V Min. Typ. Max. V(BR)DSS 700 - Gate threshold voltage V(GS)th 2.50 Zero gate voltage drain current IDSS Gate-source leakage current incl. Zener IGSS diode Drain-source on-state resistance RDS(on) - 0.74 1.53 0.90 - Ω VGS=10V,ID=1.1A,Tj=25°C VGS=10V,ID=1.1A,Tj=150°C Gate resistance RG - 1.6 - Ω f=1MHz,opendrain Unit Note/TestCondition Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 211 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 5 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 13 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 177 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=0.9A, RG=5.3Ω Rise time tr - 4.7 - ns VDD=400V,VGS=13V,ID=0.9A, RG=5.3Ω Turn-off delay time td(off) - 58 - ns VDD=400V,VGS=13V,ID=0.9A, RG=5.3Ω Fall time tf - 31 - ns VDD=400V,VGS=13V,ID=0.9A, RG=5.3Ω Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 0.9 - nC VDD=400V,ID=0.9A,VGS=0to10V Gate to drain charge Qgd - 2.6 - nC VDD=400V,ID=0.9A,VGS=0to10V Gate charge total Qg - 6.8 - nC VDD=400V,ID=0.9A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=400V,ID=0.9A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 4 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPD70R900P7S Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=1.4A,Tj=25°C 160 - ns VR=400V,IF=0.9A,diF/dt=50A/µs - 0.5 - µC VR=400V,IF=0.9A,diF/dt=50A/µs - 7 - A VR=400V,IF=0.9A,diF/dt=50A/µs Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPD70R900P7S 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 40 35 1 µs 101 10 µs 30 100 µs 100 1 ms ID[A] Ptot[W] 25 20 10 ms 10-1 15 DC 10 10-2 5 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 101 1 µs 10 µs 0.5 100 µs ZthJC[K/W] 100 ID[A] 1 ms 10 ms 10-1 0.2 100 0.1 0.05 0.02 DC 0.01 single pulse 10-2 10-3 100 101 102 103 10-1 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPD70R900P7S Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 14 10 20 V 10 V 8V 20 V 10 V 8V 9 12 7V 10 8 7V 7 6V 6V 5.5 V 6 ID[A] ID[A] 8 6 5.5 V 5 4 5V 3 4 5V 4.5 V 2 2 0 4.5 V 0 5 10 15 1 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 6 2.00 1.80 5 5V 5.5 V 6.5 V 6V 1.60 1.40 4 98% RDS(on)[Ω] RDS(on)[Ω] 1.20 3 7V 10 V 2 1.00 typ 0.80 0.60 0.40 1 0.20 0 0 5 10 15 0.00 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=1.1A;VGS=10V 7 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPD70R900P7S Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 14 10 9 25 °C 12 8 10 7 120 V 6 VGS[V] ID[A] 8 150 °C 6 400 V 5 4 3 4 2 2 1 0 0 2 4 6 8 10 0 12 0 2 4 VGS[V] 6 8 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=0.9Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram13:Drain-sourcebreakdownvoltage 2 10 840 25 °C 125 °C 820 800 780 101 IF[A] VBR(DSS)[V] 760 100 740 720 700 680 660 640 620 10-1 0.0 0.5 1.0 1.5 2.0 600 -75 -50 -25 VSD[V] 25 50 75 100 125 150 175 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 0 VBR(DSS)=f(Tj);ID=1mA 8 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPD70R900P7S Diagram14:Typ.capacitances Diagram15:Typ.Cossstoredenergy 4 10 2.00 1.80 103 1.60 1.40 Ciss 102 C[pF] Eoss[µJ] 1.20 101 1.00 0.80 Coss 0.60 Crss 100 0.40 0.20 10-1 0 100 200 300 400 500 0.00 0 VDS[V] 200 300 400 500 600 700 VDS[V] C=f(VDS);VGS=0V;f=250kHz Final Data Sheet 100 Eoss=f(VDS) 9 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPD70R900P7S 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPD70R900P7S 6PackageOutlines DIM A A1 b b2 b3 c c2 D D1 E E1 e e1 N H L L3 L4 MILLIMETERS MIN 2.20 0.00 0.68 0.72 5.13 0.46 0.46 5.98 5.25 6.40 4.70 9.40 1.38 0.90 0.60 MAX 2.40 0.15 0.89 1.10 5.50 0.60 0.60 6.22 5.40 6.73 5.60 2.29 (BSC) 4.57 (BSC) 3 10.48 1.70 1.25 1.00 DOCUMENT NO. Z8B00180313 INCHES MIN 0.087 0.000 0.027 0.028 0.202 0.018 0.018 0.235 0.207 0.252 0.185 0.370 0.054 0.035 0.024 MAX 0.094 0.006 0.035 0.043 0.217 0.024 0.024 0.245 0.213 0.265 0.220 0.090 (BSC) 0.180 (BSC) 3 0.413 0.067 0.049 0.039 SCALE 0 2.5 0 2.5 5mm EUROPEAN PROJECTION ISSUE DATE 04-02-2016 REVISION 01 Figure1OutlinePG-TO252-3,dimensionsinmm/inches Final Data Sheet 11 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPD70R900P7S 7AppendixA Table11RelatedLinks • IFXCoolMOSªP7Webpage:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 12 Rev.2.1,2018-02-13 700VCoolMOSªP7PowerTransistor IPD70R900P7S RevisionHistory IPD70R900P7S Revision:2018-02-13,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-11-24 Release of final version 2.1 2018-02-13 Corrected front page text TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.1,2018-02-13