MCC MCP140N10Y N-channel enhancement mode field effect transistor Datasheet

MCC
Micro Commercial Components
R
omponents
20736 Marilla Street Chatsworth
!"#
$ % !"#
MCP140N10Y
Features
•
•
•
•
•
•
•
Trench Power MV MOSFET technology
Low RDS(ON)
Halogen free available upon request by adding suffix "-HF"
Low Gate Charge
Optimized for fast-switching applications
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
N-Channel
Enhancement Mode
Field Effect Transistor
TO-220
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
Parameter
Drain-source Voltage
IDM
ID
Pulsed Drain Current (Note 3)
Continuous Drain Current
(Note 7)
VGS
Gate-source Voltage
PDSM
E AS
TJ
TSTG
Power Dissipation (Note 1)
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Single pulse avalanche energy (Note 3)
Operating Junction Temperature
Storage Temperature
C
B
Rating
100
Unit
V
500
140
115
±20
A
A
S
F
Q
T
A
V
U
1 2
220
110
W
800
-55 to +175
-55 to +175
mj
к
к
3
H
K
V
L
J
D
R
G
N
1.GATE
2.DRAIN
3.SOURCE
Internal Block Diagram
D
G
S
DIM
A
B
C
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.560
.625
14.22
15.88
.380
.420
9.65
10.67
.140
.190
3.56
4.82
D
F
G
H
J
K
L
N
.020
.134
.190
--.012
.500
.045
.190
.045
.161
.110
.250
.025
.580
.060
.210
0.51
3.40
2.29
--0.30
12.70
1.14
4.83
1.14
4.09
2.79
6.35
0.64
14.73
1.52
5.33
Q
R
S
T
U
V
.100
.080
.045
.230
----.045
.135
.115
.055
.270
.050
-----
2.54
2.04
1.14
5.84
----1.15
3.43
2.92
1.39
6.86
1.27
-----
NOTE
∅
www.mccsemi.com
Revision: A
1 of 5
2017/01/27
MCC
Micro Commercial Components
Electrical characteristics (Ta=25℃ unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250A, VGS=0V
100
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250A
RDS(ON)
Static Drain-Source On-Resistance
gFS
Diode Forward Voltage
VDS=5V, ID=50A
VSD
Diode Forward Voltage
IS=50A,VGS=0V
IS
Maximum Body-Diode Continuous Current (Note 7)
1
TJ=55°C
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
5
2
VGS=10V, ID=50A
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Max
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=10V, VDS=50V, ID=50A
Units
V
VDS=100V, VGS=0V
IDSS
Coss
Typ
A
±100
nA
3
4
V
3.3
3.9
5.3
6.2
80
m
S
0.85
0.99
V
140
A
6920
pF
1026
pF
34
pF
2.6

117
nC
40
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
37
nC
tD(on)
Turn-on Delay Time
48
ns
tr
Turn-on Rise Time
VGS=10V, VDS=50V, RL=2.5Ω,
56
ns
tD(off)
Turn-off Delay Time
RGEN=3Ω
75
ns
tf
trr
Qrr
Turn-off Fall Time
IF=20A,di/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery charge IF=20A,di/dt=500A/µs
33
60
560
ns
ns
nC
1. The value of RθJA is measured with the device mounted on 1in2 FR‐4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
2. The power dissipation PD is based on TJ(MAX)=175°C, using junction‐to‐case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
3. Single pulse width limited by junction temperature TJ(MAX)=175°C.
4. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
5. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
6. These curves are based on the junction‐to‐case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
7. The maximum current rating is package limited.
www.mccsemi.com
Revision: A
2 of 5
2017/01/27
R
MCC
Micro Commercial Components
Fig
Fi
g 2: Tr
Transfe
ansferr Char
ansfe
Characte
acterristi
acte
stic
cs
Fig
Fi
g 1: Ou
Output Char
Charac
acte
acter
teristic
tics
100
100
10V
6.5V
80
60
60
ID (A
(A))
ID (A
(A))
VDS=5V
5.5V
6.0V
80
125°C
40
40
25°C
VGS=5.0V
20
20
0
0
0
2
1
3
5
4
1
0
VDS (V
(V))
2
3
5
4
Fig
Fi
g 3: Rds(o
Rds(o
(on)
n) vs Drai
Drai
ain
n Cur
Currrent and
Gatte Vo
Ga
Voltage
8
Fig
Fi
g 4: Rds
Rds(o
(on)
(o
n) vs G
Ga
ate Vol
Voltage
20
5.0
18
4.5
ID==20A
20A
16
RDS
(mΩ
Ω)
DS((on) (m
RDS
(mΩ
Ω)
DS((on) (m
7
6
VGS (V)
(V)
4.0
VGS=10V
3.5
14
12
10
8
3.0
6
4
2.5
2
0
2.0
10
20
30
40
50
60
70
80
90
5
100
6
7
9
10
Fig
Fi
g 6: Capac
Capaciitanc
tance
e Char
Charac
acte
terristi
tic
cs
Fig
Fi
g 5: Rds(o
Rds(on)
n) vs.
vs. T
Te
empe
mperratur
ature
e
10000
2.0
VGS=10V
ID=50A
Cisss
Cis
C - Capaci
apacitance
tance (P
(PF)
F)
1.8
RDS
_Norma
alized
DS((on)_Norm
8
(V))
VGS (V
(A))
ID (A
1.6
1.4
1.2
1.0
1000
Co
Cosss
100
0.8
VGS=0V
f=1MHzz
f=1MH
0.6
Crsss
Crs
10
0.4
25
50
75
100
125
150
0
175
Tj - Junction Temperature (°C)
20
40
60
60
80
100
VDS (V)
www.mccsemi.com
Revision: A
3 of 5
2017/01/27
R
MCC
Micro Commercial Components
g 8: Bo
Body-di
dy-di
dy-dio
ode Fo
Forrwar
ard
d
Fig
Fi
Char
Characte
acterristi
acte
stic
cs
Fig
Fi
g 7: Gate Char
Charge
ge Charac
Charac
acte
te
terristic
tics
100
10
VGS (V
(V))
8
IS - Diode C
Cu
urrent
rrent((A)
VDS=50V
ID=50A
6
4
10
25˚
25˚C
125˚
125˚C
1
0.1
2
0.01
0
0
20
40
60
80
100
0
120
0.2
0.4
0.6
0.8
1
1.2
VSD - Diode Forw
Forwa
ard Volt
Voltage(
age(
age(V)
V)
Qg (nC)
Fi
Derati
Fig
g 10: Drai
Drai
ain
n Cu
Currrent Der
atin
ng
Pto
(W)
tott (W)
ID (A)
(A)
Fig
Fi
g 9: Po
Powe
werr Di
we
Dis
ssipati
patio
on
Tc - Case Temperature (°
(°C)
Tc - Case Temperature (°
(°C)
Fig
Fi
g 11: Safe
Safe O
Ope
perrati
atin
ng Are
Area
1000
1us
Lim
Limited by
Rdss(on)
Rd
on)
100
ID (A
(A))
10us
100us
1ms
10
10ms
DC
1
Single pulse
Tc=2
Tc=
25˚C
0.1
0.1
1
VDS (V
(V))
10
100
www.mccsemi.com
Revision: A
4 of 5
2017/01/27
R
MCC
R
Micro Commercial Components
Ordering Information :
Device
Packing
Part Number-BP
Bulk;1Kpcs/Box
Note : Adding "-HF" suffix for halogen free, eg. Part Number-BP-HF
***IMPORTANT NOTICE***
Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to
make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components
Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it
convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all
risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are
represented on our website, harmless against all damages.
***LIFE SUPPORT***
MCC's products are not authorized for use as critical components in life support devices or systems without the express written
approval of Micro Commercial Components Corporation.
***CUSTOMER AWARENESS***
Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking
strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages
customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on
our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine
parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty
coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized
distributors.
www.mccsemi.com
Revision: A
5 of 5
2017/01/27
Similar pages