XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE(sat) tfi(typ) = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC25 IC110 IF110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms 215 200 110 70 730 A A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load ICM = 220 @VCE VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 μs PC TC = 25°C 50/60Hz IISOL 1mA Md Mounting Torque Terminal Connection Torque E C G = Gate, C = Collector, E = Emitter either emitter terminal can be used as Main or Kelvin Emitter Features TJ TJM Tstg VISOL E G t = 1min t = 1s Weight 750 W -55 ... +175 175 -55 ... +175 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g International Standard Package miniBLOC, with Aluminium Nitride Isolation 2500V~ Isolation Voltage Anti-Parallel Sonic Diode Optimized for 10-30kHz Switching Square RBSOA Short Circuit Capability High Current Handling Capability Advantages High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 110A, VGE = 15V, Note 1 TJ = 150C © 2013 IXYS CORPORATION, All Rights Reserved V 6.5 V 50 A 3 mA TJ = 150C IGES 100 1.75 2.15 2.10 Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts nA V V DS100505B(6/13) IXXN110N65B4H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 24 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 110A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 55A, VGE = 15V VCE = 400V, RG = 2 Note 2 Inductive load, TJ = 150°C IC = 55A, VGE = 15V VCE = 400V, RG = 2 Note 2 RthJC RthCS SOT-227B miniBLOC (IXXN) 40 S 3650 440 143 pF pF pF 183 nC 32 nC 83 nC 38 46 2.20 156 85 1.05 ns ns mJ ns ns mJ 1.70 34 46 3.15 160 105 1.40 ns ns mJ ns ns mJ 0.05 0.20 °C/W °C/W Reverse Sonic Diode (FRD) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 100A, VGE = 0V, Note 1 IRM IF = 100A, VGE = 0V, -diF/dt = 1500A/sVR = 300V trr Characteristic Values Min. Typ. Max. TJ = 150C 1.7 1.8 TJ = 150C 95 A 100 ns V V 0.42 C/W RthJC Notes: 2.3 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXN110N65B4H1 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC VGE = 15V 14V 13V 200 300 11V 250 VGE = 15V 14V 13V 12V IC - Amperes IC - Amperes 160 12V 10V 120 80 9V 200 11V 150 10V 100 9V 40 8V 50 8V 0 7V 0 0.5 1 1.5 2 2.5 3 0 3.5 7V 0 2 4 6 8 10 12 14 16 18 150 175 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 2.4 VGE = 15V 14V 200 VGE = 15V 2.2 13V 2.0 IC - Amperes VCE(sat) - Normalized 12V 160 11V 120 10V 80 I 1.8 C = 220A 1.6 1.4 I 1.2 C = 110A 1.0 9V 0.8 40 8V 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 I 0.6 = 55A 0.4 -50 4.5 -25 0 VCE - Volts 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 5.0 C Fig. 6. Input Admittance 100 TJ = 25ºC 4.5 90 80 4.0 I 3.0 C IC - Amperes VCE - Volts 70 3.5 = 220A 2.5 TJ = - 40ºC 25ºC 60 50 TJ = 150ºC 40 30 110A 2.0 20 1.5 10 55A 1.0 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 0 14 15 4 5 6 7 VGE - Volts 8 9 10 IXXN110N65B4H1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 TJ = - 40ºC 50 VCE = 325V 14 I G = 10mA 12 40 25ºC 30 VGE - Volts g f s - Siemens I C = 110A 150ºC 20 10 8 6 4 10 2 0 0 0 10 20 30 40 50 60 70 80 90 0 100 20 40 60 80 100 120 140 160 180 200 QG - NanoCoulombs IC - Amperes Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10,000 240 f = 1 MHz Cies IC - Amperes Capacitance - PicoFarads 200 1,000 Coes 160 120 80 TJ = 150ºC 40 Cres 0 100 100 0 5 10 15 20 25 30 35 40 RG = 2Ω dv / dt < 10V / ns 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXXN110N65B4H1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Eon - Eoff 4.5 --- TJ = 150ºC , VGE = 15V 4.0 VCE = 400V 16 3.8 Eoff 14 3.4 RG = 2Ω , VGE = 15V 12 I C = 110A 3.0 10 2.5 8 2.0 6 1.5 4 I 1.0 C = 55A 0.5 2 3 4 5 6 7 8 9 10 11 12 13 14 10 Eon 3.0 7 2.6 6 2.2 5 TJ = 150ºC 1.8 4 1.4 3 1.0 2 0.6 0 0.2 2 TJ = 25ºC 1 55 15 60 65 70 75 4.0 ---- RG = 2Ω , VGE = 15V Eoff - MilliJoules 2.4 6 2.0 5 1.6 4 I C = 55A I 150 I C = 110A 100 50 0 2 3 4 5 6 7 tfi td(off) - - - - 180 160 170 140 RG = 2Ω , VGE = 15V VCE = 400V 140 130 TJ = 25ºC 100 110 20 10 95 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 100 105 tfi td(off) - - - - 240 RG = 2Ω , VGE = 15V VCE = 400V 200 I C = 55A I C = 110A 60 40 90 15 120 110 85 14 80 30 80 13 160 120 75 12 100 50 70 11 280 120 t f i - Nanoseconds TJ = 150ºC 90 65 10 80 40 25 50 75 100 TJ - Degrees Centigrade 125 0 150 t d(off) - Nanoseconds 150 t d(off) - Nanoseconds t f i - Nanoseconds 160 110 60 9 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 55 8 RG - Ohms TJ - Degrees Centigrade 70 350 = 55A 60 0 130 C 200 1 150 125 400 VCE = 400V 250 20 100 450 80 40 0.4 500 100 2 150 0 110 300 0.8 170 105 120 3 75 100 td(off) - - - - 140 1.2 50 95 t d(off) - Nanoseconds 7 I C = 110A Eon - MilliJoules 2.8 25 90 TJ = 150ºC, VGE = 15V 160 8 VCE = 400V tfi 180 9 t f i - Nanoseconds 3.2 85 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 200 10 Eon 80 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 8 VCE = 400V RG - Ohms 3.6 9 ---- Eon - MilliJoules Eoff - MilliJoules 4.2 Eon - MilliJoules 3.5 18 Eoff - MilliJoules 5.0 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXXN110N65B4H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 200 160 I VCE = 400V C = 110A 90 140 70 120 60 100 50 C = 55A 80 40 60 30 40 20 20 3 4 5 6 7 8 9 10 11 12 13 14 180 70 65 60 VCE = 400V 120 55 I 100 C = 110A 50 80 45 60 40 40 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 2Ω , VGE = 15V 140 35 I C = 55A 20 30 0 25 50 75 100 100 50 45 TJ = 25ºC TJ = 150ºC 80 125 40 60 35 40 30 60 65 70 75 80 85 90 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature tri 55 VCE = 400V 120 55 15 RG - Ohms 160 td(on) - - - - 20 10 2 tri RG = 2Ω , VGE = 15V 25 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 95 100 105 25 110 t d(on) - Nanoseconds 140 I 60 80 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - TJ = 150ºC, VGE = 15V 160 t r i - Nanoseconds tri 180 100 IXXN110N65B4H1 Fig. 22. Typ. Reverse Recovery Charge Qrr vs. -diF/dt Fig. 21. Typ. Forward characteristics 20 200 TVJ = 150ºC 175 16 150 VR = 300V IF = 200A TVJ = 25ºC TVJ = 150ºC 125 QRM IF 12 100A 100 [µC] [A] 75 8 50A 50 4 25 0 0 0.5 1 1.5 2 2.5 0 1000 3 1200 VF - [V] 1800 2000 Fig. 24. Typ. Recovery Time trr vs. -diF/dt 350 140 IF = 200A TVJ = 150ºC TVJ = 150ºC 300 VR = 300V VR = 300V 250 100A 100 trr IRM [A] 1600 -diF/ dt [A/µs] Fig. 23. Typ. Peak Reverse Current IRM vs. -diF/dt 120 1400 200 IF = 200A [ns] 50A 80 150 100A 60 100 40 1000 1200 1400 1600 1800 50 1000 2000 50A 1200 diF/dt [A/µs] 1400 1600 1800 2000 -diF/dt [A/µs] Fig. 26. Maximum Transient Thermal Impedance Fig. 25. Typ. Recovery Energy Erec vs. -diF/dt 1 5 TVJ = 150ºC IF = 200A VR = 300V Erec 3 Z(th)JC - ºC / W 4 100A [mJ] 2 0.1 0.01 50A 1 0 1000 1200 1400 1600 -diF/dt [A/µs] © 2013 IXYS CORPORATION, All Rights Reserved 1800 2000 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS REF: IXX_110N65B4H1(E8) 02-04-13-B