JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate Diodes ESDU5V0H3 Uni-direction ESD Protection Diode DESCRIPTION SOT-23-6L Designed to protect voltage sensitive electronic components from ESD and other transients. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD. The combination of small size, low capacitance, and high level of ESD protection makes them a flexible solution for applications such as USB3.0 power & data line, Video line, and WAN/LAN equipment. It is designed to replace multiplayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc. FEATURES Uni-directional ESD protection of two lines Excellent package:2.92mm×1.60mm×1.10mm Low capacitance: 0.8pF(Max) Fast response time Low reverse stand−off voltage: 5V JESD22-A114-B ESD Rating of class 3B per human Low reverse clamping voltage Low leakage current body model IEC 61000-4-2 Level 4 ESD protection APPLICATIONS USB3.0 power & data line protection Microcontroller input Protection WLAN/LAN equipment ISDN S/T Interface Mobile phone Other electronics equipments Video line protection Communication systems MARKING U5H3 = Device code U5H3 Solid dot=Pin1 indicator Front side www.cj-elec.com 1 A-1, Oct,2014 CHANGJIANG ELEC.TECH. ESDU5V0H3 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter IEC 61000-4-2 ESD Voltage(I/O to GND & VCC to GND) Air Model Contact Model JESD22-A114-B ESD Voltage(I/O to GND & VCC to GND) Per Human Body Model ESD Voltage(I/O to GND & VCC to GND) VESD(1) ±25 kV ±16 ±0.4 (2) 90 W (2) 3.5 A PPP IPP Peak Pulse Current Unit ±25 Machine Model Peak Pulse Power Limit Lead Solder Temperature − Maximum (10 Second Duration) TL 260 ℃ Junction Temperature Tj 150 ℃ Tstg -55 ~ +150 ℃ Storage Temperature Range (1).Device stressed with ten non-repetitive ESD pulses. (2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5. ESD standards compliance IEC61000-4-2 Standard JESD22-A114-B Standard Contact Discharge Air Discharge ESD Class Human Body Discharge V Level Test Voltage kV Level Test Voltage kV 0 0～249 1 2 1 2 2 4 2 4 1A 1B 1C 250～499 500～999 1000～1999 3 6 3 8 4 8 4 15 2 3A 3B 2000～3999 4000～7999 8000～15999 ESD pulse waveform according to IEC61000-4-2 www.cj-elec.com 8/20μs pulse waveform according to IEC 61000-4-5 2 A-1,Oct,2014 CHANGJIANG ELEC.TECH. ESDU5V0H3 ELECTRICAL PARAMETER Symbol Parameter VC Clamping Voltage @ IPP IPP Peak Pulse Current VBR Breakdown Voltage @ IT IT Test Current IR Reverse Leakage Current @ VRWM VRWM Reverse Standoff Voltage VF Forward Voltage@ IF IF Forward Current V-I characteristics for a uni-directional TVS ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Test conditions Symbol Min Typ Max Unit 5 V Per channel(I/O to GND unless otherwise specified) Reverse stand off voltage Breakdown voltage VRWM（1） V(BR) Reverse leakage current IR Forward voltage VF IT=1mA 6 10 V IT=1mA VCC to GND 5 12 V 1 μA 1.5 V 13 V 25 V 0.8 pF 0.4 pF VRWM=5V (I/O to GND & VCC to GND) IF=10mA (I/O to GND & VCC to GND) 0.4 IPP=1A Clamping voltage （2） VC (I/O to GND & VCC to GND) IPP=3.5A (I/O to GND & VCC to GND) Junction capacitance CJ VR=0V,f=1MHz I/O to I/O VR=0V,f=1MHz, (1).Other voltages available upon request. (2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5 www.cj-elec.com 3 A-1,Oct,2014 CHANGJIANG ELEC.TECH. ESDU5V0H3 TYPICAL CHARACTERISTICS Forward 100 Pulsed VCC to Ground (mA) IF 10 FORWARD CURRENT IF (mA) Pulsed I/O Pin to Ground FORWARD CURRENT Characteristics Forward Characteristics 100 Ta=100℃ Ta=25℃ 1 0.1 0.2 0.4 0.6 0.8 1.0 Ta=100℃ 10 Ta=25℃ 1 0.1 0.2 1.2 0.4 0.6 0.8 FORWARD VOLTAGE FORWARD VOLTAGE Reverse 100 VF (V) Reverse Characteristics Characteristics Pulsed VCC to Ground 80 REVERSE CURRENT IR (mA) (mA) 80 REVERSE CURRENT IR 1.2 (V) 100 Pulsed I/O Pin to Ground Ta=100℃ 60 Ta=25℃ 40 20 0 Ta=100℃ 60 Ta=25℃ 40 20 0 2 4 6 REVERSE VOLTAGE VC —— 30 8 VR 10 0 12 0 4 6 8 VR REVERSE VOLTAGE IPP 10 12 (V) Capacitance Characteristics 1.0 Ta=25℃ Ta=25℃ f=1MHz 24 JUNCTION CAPACITANCE CJ (pF) 0.8 I/O Pin to Ground 18 12 VCC to Ground 6 0 1.0 2 (V) tp=8/20us CLAMPING VOLTAGE VC (V) 1.0 VF I/O Pin to Ground 0.6 0.4 I/O Pin to I/O Pin 0.2 1.5 2.0 2.5 3.0 0.0 3.5 REVERSE PEAK PULSE CURRENT IPP (A) www.cj-elec.com 0 1 2 REVERSE VOLTAGE 4 3 4 VR 5 (V) A-1,Oct,2014 ESDU5V0H3 CHANGJIANG ELEC.TECH. PACKAGE OUTLINE AND PAD LAYOUT INFORMATION SOT-23-6L Package Outline Dimensions Symbol A A1 A2 b c D E1 E e e1 L θ Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° SOT-23-6L Suggested Pad Layout www.cj-elec.com 5 A-1,Oct,2014 ESDU5V0H3 CHANGJIANG ELEC.TECH. TAPE AND REEL INFORMATION www.cj-elec.com 6 A-1,Oct,2014