JSMC JCS5N50VC-O-V-N-B N-channel mosfet Datasheet

N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
R
JCS5N50C
封装 Package
主要参数 MAIN CHARACTERISTICS
ID
VDSS
Rdson(Vgs=10V)
Qg
用途
 高频开关电源
 电子镇流器
 UPS 电源
产品特性
 低栅极电荷
 低 Crss (典型值 14pF)
 开关速度快
 产品全部经过雪崩测试
 高抗 dv/dt 能力
 RoHS 产品
5A
500 V
1.45Ω
14nC
APPLICATIONS
 High frequency
switching mode
power supply
 Electronic ballast
 UPS
FEATURES
 Low gate charge
 Low Crss (typical 14pF )
 Fast switching
 100% avalanche tested
 Improved dv/dt capability
 RoHS product
订货信息 ORDER MESSAGE
订 货 型 号
Order codes
印
记
Marking
封
装
Package
无卤素
Halogen Free
包
装
Packaging
器件重量
Device Weight
JCS5N50VC-O-V-N-B
JCS5N50VC
IPAK
否
NO
条管 Tube
0.35 g(typ)
JCS5N50RC-O-R-N-B
JCS5N50RC
DPAK
否
NO
条管 Tube
0.30g(typ)
JCS5N50RC-O-R-N-A
JCS5N50RC
DPAK
否
NO
编带 Brede
0.30g(typ)
JCS5N50CC-O-C-N-B
JCS5N50CC
TO-220C
否
NO
条管 Tube
2.15 g(typ)
JCS5N50FC-O-F-N-B
JCS5N50FC
TO-220MF
否
NO
条管 Tube
2.20 g(typ)
版本:201510C
1/12
JCS5N50C
R
绝对最大额定值
ABSOLUTE RATINGS (Tc=25℃)
项
目
Parameter
符 号
Symbol
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
连续漏极电流
Drain Current
ID
T=25℃
T=100℃
-continuous
数 值
Value
JCS5N50FC
单
位
Unit
500
500
V
5
5*
A
3.16
3.16*
A
20
20*
A
JCS5N50VC/RC
JCS5N50CC
最大脉冲漏极电流(注 1)
Drain Current - pulse
(note 1)
IDM
最高栅源电压
Gate-Source Voltage
VGSS
±30
V
单脉冲雪崩能量(注 2)
Single Pulsed Avalanche
Energy(note 2)
EAS
305
mJ
雪崩电流(注 1)
Avalanche Current(note 1)
IAR
5
A
重复雪崩能量(注 1)
Repetitive Avalanche Energy
(note 1)
EAR
10.1
mJ
二极管反向恢复最大电压变化
速率(注 3)
Peak Diode Recovery dv/dt
(note 3)
dv/dt
4.5
V/ns
耗散功率
Power Dissipation
PD
TC=25℃
-Derate
above
25℃
最高结温及存储温度
Operating and Storage
Temperature Range
TJ,TSTG
引线最高焊接温度
Maximum Lead Temperature
for Soldering Purposes
TL
91
101
41
W
0.73
0.81
0.33
W/℃
-55~+150
℃
300
℃
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
版本:201510C
2/12
JCS5N50C
R
电特性 ELECTRICAL CHARACTERISTICS
项
目
Parameter
符 号
Symbol
测试条件
Tests conditions
最小 典型 最 大 单 位
Min Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSS
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/Δ ID=250μA, referenced to
TJ
25℃
ID=250μA, VGS=0V
500
-
-
V
-
0.5
-
V/℃
VDS=500V,VGS=0V,
TC=25℃
-
-
10
μA
VDS=400V,
-
-
100
μA
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
VDS=0V, VGS =30V
-
-
100
nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
-
-
-100
nA
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0
-
4.0
V
静态导通电阻
Static Drain-Source
On-Resistance
RDS(ON)
VGS =10V , ID=2.5A
-
1.15 1.45
Ω
正向跨导
Forward Transconductance
gfs
VDS = 40V, ID=2.5A(note 4)
-
5.5
-
S
TC=125℃
通态特性 On-Characteristics
动态特性 Dynamic Characteristics
输入电容
Input capacitance
Ciss
输出电容
Output capacitance
Coss
反向传输电容
Reverse transfer capacitance
Crss
版本:201510C
VDS=25V,
VGS =0V,
f=1.0MHZ
-
473
613
pF
-
53
102
pF
-
14
19
pF
3/12
JCS5N50C
R
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
td(on)
上升时间 Turn-On rise time
tr
延迟时间 Turn-Off delay time
VDD=250V,ID=5A,RG=25Ω
(note 4,5)
-
45
60
ns
-
26
34
ns
td(off)
-
133 170
ns
下降时间 Turn-Off Fall time
tf
-
214 270
ns
栅极电荷总量 Total Gate Charge
Qg
-
14
20
nC
栅-源电荷 Gate-Source charge
Qgs
-
3.5
-
nC
栅-漏电荷 Gate-Drain charge
Qgd
-
6
-
nC
VDS =400V ,
ID=5A
VGS =10V (note 4,5)
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS
-
-
5
A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
-
-
20
A
-
-
1.4
V
-
268
-
ns
-
2.1
-
μC
正向压降
Drain-Source Diode Forward
Voltage
VSD
反向恢复时间
Reverse recovery time
trr
反向恢复电荷
Reverse recovery charge
Qrr
VGS=0V,
IS=5A
VGS=0V, IS=5A
dIF/dt=100A/μs (note 4)
热特性 THERMAL CHARACTERISTIC
项
目
Parameter
符 号
Symbol
结到管壳的热阻
Thermal Resistance, Junction to Case
最大
Max
JCS5N50VC/RC JCS5N50CC JCS5N50FC
单 位
Unit
Rth(j-c)
1.38
1.23
3.08
℃/W
结到环境的热阻
Rth(j-A)
Thermal Resistance, Junction to Ambient
110
62.5
62.5
℃/W
Notes:
注释:
1:Pulse width limited by maximum junction
1:脉冲宽度由最高结温限制
2:L=10.5mH, IAS=5A, VDD=50V,
temperature
RG=25 Ω,起始结
温 TJ=25℃
3:ISD ≤5A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
版本:201510C
2:L=10.5mH, IAS=5A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3:ISD ≤5A,di/dt ≤200A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
4/12
JCS5N50C
R
特征曲线
ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
On-Region Characteristics
VGS
15V
10V
9V
8V
7V
6.5V
6V
5.5V
Bottom 5V
10
10
ID [A]
ID [A]
Top
150℃
25℃
1
Notes:
1. 250μs pulse test
2. TC=25℃
1
Notes:
1.250μs pulse test
2.VDS=40V
0.1
1
2
10
4
6
8
10
VG S [V]
VD S [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
3.2
3.0
10
2.6
ID R [A]
RD S (on) [ Ω ]
2.8
2.4
VGS=10V
2.2
2.0
150℃
25℃
1
1.8
1.6
Notes:
1. 250μs pulse test
2. VGS=0V
1.4
Note :T j=25℃
VGS=20V
1.2
1.0
0
2
4
6
8
10
12
14
0.1
0.2
ID [A]
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
VS D [V]
Gate Charge Characteristics
Capacitance Characteristics
3
1.2x10
12
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
2
9.0x10
2
6.0x10
2
3.0x10
0.0
-1
10
0
10
1
10
V DS Drain-Source Voltage [V]
版本:201510C
VDS=400V
10
VG S Gate Source Voltage[V]
Capacitance [pF]
0.3
VDS=250V
VDS=100V
8
6
4
2
0
0
10
Qg Toltal Gate Charge [nC]
5/12
JCS5N50C
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
On-Resistance Variation
vs. Temperature
Breakdown Voltage Variation
vs. Temperature
1.2
1.1
(Normalized)
2.0
1.5
(on)
1.0
0.9
0.8
-75
RD S
BV D S (Normalized)
2.5
Notes:
1. VGS=0V
2. ID=250μA
-50
-25
0
25
50
75
100
125
1.0
Notes:
1. VGS=10V
2. ID=2.5A
0.5
0.0
-75
150
-50
-25
0
T j [℃ ]
10
100μs
1ms
10ms
0
100ms
Note:
1 TC=25℃
2 TJ=150℃
3 Single Pulse
1
100μs
1ms
0
10
10
10ms
Note:
1 TC=25℃
2 TJ=150℃
3 Single Pulse
DC
-1
10
2
10
125
10μs
1
I D Drain Current [A]
I D Drain Current [A]
10μs
1
0
100
Operation in This Area
is Limited by RDS(ON)
10
10
75
Maximum Safe Operating Area
For JCS5N50FC
Operation in This Area
is Limited by RDS(ON)
-1
50
T j [℃ ]
Maximum Safe Operating Area
For JCS5N50VC/RC/CC
10
25
0
10
10
VD S Drain-Source Voltage [V]
1
10
100ms
DC
2
10
VD S Drain-Source Voltage [V]
Maximum Drain Current
vs. Case Temperature
I D Drain Current [A]
6
4
2
0
25
50
75
100
125
150
T C Case Temperature [℃]
版本:201510C
6/12
150
JCS5N50C
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JCS5N50VC/RC
(t) Thermal Response
1
D = 0 .5
0 .2
0 .1
N
1
2
3
0 .0 5
0 .1
0 .0 2
o te s :
Z θ J C ( t)= 1 .3 8 ℃ /W M a x
D u ty F a c t o r , D = t1 /t2
T J M -T c = P D M * Z θ J C(t)
θ JC
0 .0 1
Z
P
DM
t1
0 .0 1
s in g le p u ls e
1 E -5
1 E -4
1 E -3
t2
0 .0 1
0 .1
1
10
t1 S q u a r e W a v e P u ls e D u r a t io n [s e c ]
1
D = 0 .5
0 .2
0 .1
0 .1
N
1
2
3
0 .0 5
0 .0 2
o te s :
Z θ J C ( t) = 1 .2 3 ℃ /W M a x
D u ty F a c to r , D = t1 /t2
T J M -T c = P D M * Z θ J C(t)
0 .0 1
θ JC
(t) Thermal Response
Transient Thermal Response Curve
For JCS5N50CC
Z
P
DM
t1
0 .0 1
s in g le p u ls e
1 E -5
1 E -4
1 E -3
t2
0 .0 1
0 .1
1
10
t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Transient Thermal Response Curve
For JCS5N50FC
0 .2
0 .1
N
1
2
3
0 .0 5
0 .1
0 .0 2
o te s :
Z θ J C( t) = 3 .0 8 ℃ /W M a x
D u ty F a c to r , D = t 1 /t 2
T J M -T c = P D M * Z θ J C(t)
0 .0 1
θ JC
(t) Thermal Response
D = 0 .5
1
Z
P
DM
t1
s in g le p u ls e
t2
0 .0 1
1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
10
t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ]
版本:201510C
7/12
R
JCS5N50C
外形尺寸 PACKAGE MECHANICAL DATA
IPAK
版本:201510C
单位 Unit:mm
8/12
R
JCS5N50C
外形尺寸 PACKAGE MECHANICAL DATA
DPAK
编带
单位 Unit:mm
REEL
版本:201510C
9/12
R
JCS5N50C
外形尺寸 PACKAGE MECHANICAL DATA
TO-220C
版本:201510C
单位 Unit:mm
10/12
R
JCS5N50C
外形尺寸 PACKAGE MECHANICAL DATA
TO-220MF
版本:201510C
单位 Unit:mm
11/12
JCS5N50C
R
注意事项
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
2.购买时请认清公司商标,如有疑问请与公
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
NOTE
1. Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
联系方式
CONTACT
吉林华微电子股份有限公司
JILIN SINO-MICROELECTRONICS CO., LTD.
公司地址:吉林省吉林市深圳街 99 号
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64678411
Fax:86-432-64665812
Web Site:www.hwdz.com.cn
邮编:132013
总机:86-432-64678411
传真:86-432-64665812
网址:www.hwdz.com.cn
市场营销部
地址:吉林省吉林市深圳街 99 号
邮编:132013
电话: 86-432-64675588
64675688
64678411-3098/3099
传真: 86-432-64671533
版本:201510C
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64675588
64675688
64678411-3098/3099
Fax: 86-432-64671533
12/12
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