BWTECH MS44P15 P-channel 20-v (d-s) mosfet Datasheet

MS44P15
P-Channel 20-V (D-S) MOSFET
Description
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and
to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, and PCMCIA cards, cellular
and cordless telephones.
Features
• Low rDS(on) provides higher efficiency and extends
battery life
• Low thermal impedance copper leadframe SOIC-8
saves board space
• Fast switching speed
• High performance trench technology
• RoHS compliant package
Packing & Order Information
3,000/Reel
Graphic symbol
Publication Order Number: [MS44P15]
© Bruckewell Technology Corporation Rev. A -2014
MS44P15
P-Channel 20-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
±12
V
ID
Continuous Drain Current @ TC=25°C
-13.5
A
IDM
Pulsed Drain Current
±50
A
IS
Continuous Source Current (Diode Conduction)
-2.1
A
TJ/TSTG
Operating Junction and Storage Temperature
-55 to +150
°C
PW
Power Dissipation@ TC=25°C
3.1
W
NOTE:
1. Repetitive rating; pulse width limited by maximum junction temperature.
Thermal characteristics (Tc=25°C unless otherwise noted)
Symbol
Parameter
Maximum
RθJA
Maximum Junction-to-Ambient
50
RθJC
Maximum Junction-to-Case
25
Static Characteristics
Symbol
Test Conditions
Min
Typ.
Units
°C/W
Max.
VGS
VDS = VGS, ID= -250μA
IGSS
VDS= 0 V , VGS= ±12 V
±100
VDS= -16 V , VGS= 0 V
-1
VDS= -16 V , VGS= 0 V , TJ= 55°C
-5
IDSS
ID(on)
RDS(on)
VDS = -4.5 V, VGS= 10 V
-0.7
V
-50
8.4
VDS = -2.5 V, ID= -12 A
10.2
VGS = -15 V, ID= 11.5 A
VSD
IS = 2.5 A, VGS= 0 V
Dynamic Characteristics
Symbol
Test Conditions
nA
uA
A
VDS = -4.5 V, ID= -13.5 A
gfs
Units
mΩ
70
S
-0.6
V
Min
Typ.
Max.
Units
--
66
--
nC
--
13
--
nC
Qgd
--
17
--
nC
td(on)
--
20
--
ns
Qg
Qgs
VDS= -10 V , ID= -4.5 A,
VGS= -13.5 V
tr
VDD= -10 V , ID= -1 A,
--
23
--
ns
td(off)
VGEN= -4.5 V , RL= 6 Ω
--
289
--
ns
--
134
--
ns
tf
Publication Order Number: [MS44P15]
© Bruckewell Technology Corporation Rev. A -2014
MS44P15
P-Channel 20-V (D-S) MOSFET
NOTE:
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
Publication Order Number: [MS44P15]
© Bruckewell Technology Corporation Rev. A -2014
MS44P15
P-Channel 20-V (D-S) MOSFET
■Characteristic
Curves
FIG.1-ON REGION CHARACTERISTICS
FIG.2- ON-RESISTANCE VARIATION WITH
DRAIN CURRENT GATE VOLTAGE
FIG.3-ON RESISTANCE VARIATION WITH
FIG.4-ON-RESISTANCE VARIATION WITH GATE TO
TEMPERATURE
SOURCE VOLTAGE
FIG.5-TRANSFER CHARACTERISTICS
FIG.6-BODY DIODE FORWARD VOLTAGE VARIATION
WITH WOURCE CURRENT AND TEMPERATURE
Publication Order Number: [MS44P15]
© Bruckewell Technology Corporation Rev. A -2014
MS44P15
P-Channel 20-V (D-S) MOSFET
■Characteristic Curves
FIG.7-GATE CHARGE
CHARACTERISTICS
FIG.8-CAPACITANCE CHARACTERISTICS
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-SINGLE PULSE MAXIMUM POWER DISSIPATION
FIG.11- 11. Normalized Thermal Transient Junction to Ambient
Publication Order Number: [MS44P15]
© Bruckewell Technology Corporation Rev. A -2014
MS44P15
P-Channel 20-V (D-S) MOSFET
Disclaimer
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Publication Order Number: [MS44P15]
© Bruckewell Technology Corporation Rev. A -2014
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