ON NSVBAV23CLT1G Dual high voltage common cathode switching diode Datasheet

BAV23CL, NSVBAV23CL
Dual High Voltage Common
Cathode Switching Diode
Features
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: Class 2
•
•
•
•
www.onsemi.com
ESD Rating − Machine Model: Class C
Fast Switching Speed
Switching Application
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ANODE
1
3
CATHODE
2
ANODE
3
1
2
Typical Applications
SOT−23
CASE 318
STYLE 9
• LCD TV
• Power Supply
• Industrial
MARKING DIAGRAM
MAXIMUM RATINGS
3
Rating
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Current
Non−Repetitive Peak
Forward Surge Current
@ t = 1.0 s
@ t = 100 s
@ t = 10 ms
Peak Forward Surge Current
Non−Repetitive Peak
Per Human Body Model
Per Machine Model
Symbol
Value
Unit
VR
250
V
VRRM
250
V
IF
400
mA
IFSM
9.0
3.0
1.7
A
IFM(surge)
625
mAdc
HBM
MM
4.0
400
kV
V
AA MG
G
1
2
AA
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
Package
Shipping†
BAV23CLT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
BAV23CLT3G
SOT−23
(Pb−Free)
10000 / Tape &
Reel
NSVBAV23CLT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
October, 2016 − Rev. 3
1
Publication Order Number:
BAV23CLT1/D
BAV23CL, NSVBAV23CL
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
265
2.1
mW
mW/°C
SINGLE HEATED
Total Device Dissipation (Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
RJA
472
°C/W
Thermal Reference, Junction−to−Anode Lead (Note 1)
R_ψJL
263
°C/W
Thermal Reference, Junction−to−Case (Note 1)
R_ψJC
289
°C/W
PD
345
2.7
mW
mW/°C
RJA
362
°C/W
Thermal Reference, Junction−to−Anode Lead (Note 2)
R_ψJL
251
°C/W
Thermal Reference, Junction−to−Case (Note 2)
R_ψJC
250
°C/W
PD
390
3.1
mW
mW/°C
RJA
321
°C/W
Thermal Reference, Junction−to−Anode Lead (Note 1)
R_ψJL
159
°C/W
Thermal Reference, Junction−to−Case (Note 1)
R_ψJC
138
°C/W
PD
540
4.3
mW
mW/°C
RJA
231
°C/W
Thermal Reference, Junction−to−Anode Lead (Note 2)
R_ψJL
148
°C/W
Thermal Reference, Junction−to−Case (Note 2)
R_ψJC
119
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Total Device Dissipation (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
DUAL HEATED (Note 3)
Total Device Dissipation (Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
1. FR-4 @ 100 mm2, 1 oz. copper traces, still air.
2. FR-4 @ 500 mm2, 2 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
−
−
0.1
100
250
−
−
−
1000
1250
Unit
OFF CHARACTERISTICS
IR
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 Adc)
V(BR)
Adc
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT
−
5.0
pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 )
trr
−
150
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BAV23CL, NSVBAV23CL
100
Ir, REVERSE CURRENT (A)
IF, FORWARD CURRENT (mA)
1
−40°C
0.1
0°C
25°C
0.01
75°C
125°C
150°C
0.001
0.2
0.6
0.4
0.8
1.0
1.2
125°C
1
75°C
0.1
25°C
0.01
0°C
0.001
0.0001
1.4
150°C
10
−40°C
0
50
100
150
200
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
Figure 2. Reverse Current
250
CT, TOTAL CAPACITANCE (pF)
3.0
TA = 25°C
f = 1 MHz
2.5
2.0
1.5
1.0
0.5
0
0
5
10
15
20
30
25
35
40
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
820 +10 V
2.0 k
100 H
tr
0.1 F
IF
tp
t
IF
trr
10%
t
0.1 F
90%
D.U.T.
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 3.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 4. Recovery Time Equivalent Test Circuit
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3
BAV23CL, NSVBAV23CL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BAV23CLT1/D
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