Fairchild BC33740BU Npn epitaxial silicon transistor Datasheet

BC337 / BC338
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver Stages and Low-Power Output Stages
• Complement to BC327 / BC328
1
TO-92
1. Collector 2. Base 3. Emitter
Ordering Information
Part Number
Top Mark
Package
Packing Method
BC33716BU
BC33716
TO-92 3L
Bulk
BC33716TA
BC33716
TO-92 3L
Ammo
BC33716TFR
BC33716
TO-92 3L
Tape and Reel
BC33725BU
BC33725
TO-92 3L
Bulk
BC33725TA
BC33725
TO-92 3L
Ammo
BC33725TAR
BC33725
TO-92 3L
Ammo
BC33725TF
BC33725
TO-92 3L
Tape and Reel
BC33725TFR
BC33725
TO-92 3L
Tape and Reel
BC33740BU
BC33740
TO-92 3L
Bulk
BC33740TA
BC33740
TO-92 3L
Ammo
BC33825TA
BC33825
TO-92 3L
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
BC337
50
BC338
30
BC337
45
BC338
25
Unit
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
800
mA
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 to 150
°C
© 2002 Fairchild Semiconductor Corporation
BC337 / BC338 Rev. 1.1.0
V
V
www.fairchildsemi.com
BC337 / BC338 — NPN Epitaxial Silicon Transistor
October 2014
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Value
Unit
Power Dissipation
625
mW
Derate Above 25°C
5.0
mW/°C
Thermal Resistance, Junction-to-Ambient
200
°C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
BVCEO
Collector-Emitter
Breakdown Voltage
BC337
BVCES
Collector-Emitter
Breakdown Voltage
BC337
BVEBO
Emitter-Base Breakdown Voltage
ICES
hFE1
hFE2
BC338
BC338
Collector Cut-Off Current
Max.
45
IC = 10 mA, IB = 0
IC = 0.1 mA, VBE = 0
IE = 0.1 mA, IC = 0
50
V
30
5
V
100
BC338 VCE = 25 V, IB = 0
2
100
DC Current Gain
VBE(on)
VCE = 1 V, IC = 100 mA
100
VCE = 1 V, IC = 300 mA
60
Unit
V
25
2
Collector-Emitter Saturation Voltage
Cob
Typ.
BC337 VCE = 45 V, IB = 0
VCE(sat)
fT
Min.
nA
630
IC = 500 mA, IB = 50 mA
0.7
V
Base-Emitter On Voltage
VCE = 1 V, IC = 300 mA
1.2
V
Current Gain Bandwidth Product
VCE = 5 V, IC = 10 mA,
f = 50 MHz
100
MHz
Output Capacitance
VCB = 10 V, IE = 0,
f = 1 MHz
12
pF
hFE Classification
Classification
16
25
40
hFE1
100 ~ 250
160 ~ 400
250 ~ 630
hFE2
60 ~
100 ~
170 ~
© 2002 Fairchild Semiconductor Corporation
BC337 / BC338 Rev. 1.1.0
www.fairchildsemi.com
2
BC337 / BC338 — NPN Epitaxial Silicon Transistor
Thermal Characteristics(1)
APPROVED
July-14-2008
D
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Datasheet contains the design specifications for product development. Specifications may change
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Rev. I72
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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