Foshan BRD640 N-channel mosfet in a to-252 plastic package Datasheet

BRD640
Rev.D May.-2016
描述
/
DATA SHEET
Descriptions
TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package.
特征
/ Features
低栅电荷,低反馈电容,开关速度快。
Low gate charge, low crss, fast switching.
用途
/
Applications
用于高效 DC/DC 转换和功率开关。
These devices are well suited for high efficiency switching DC/DC converters and switch mode power
supplies.
内部等效电路
引脚排列
/ Equivalent Circuit
/ Pinning
4
2
1
3
PIN1:G
放大及印章代码
PIN 2,4:D
PIN 3:S
/ hFE Classifications & Marking
见印章说明。 See Marking Instructions.
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BRD640
Rev.D May.-2016
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Drain-Source Voltage
符号
Symbol
VDSS
数值
Rating
200
单位
Unit
V
ID(Tc=25℃)
18
A
ID(Tc=100℃)
11.2
A
IDM
72
A
VGSS
±20
V
EAS
500
mJ
EAR
13.9
mJ
IAR
10
A
PD
186
W
TJ,TSTG
-55 to 150
℃
RθJC
0.74
℃/W
Junction-to-Ambient
RθJA
48.19
Notes:
1:Repetitive rating; pulse width limited by maximum junction temperature
2:L=10.0mH, ID=10A, Start TJ=25℃
℃/W
Drain Current
Drain Current
Pulsed Drain Current
Note1
Gate-Source Voltage
Single Pulsed Avalanche Energy
Note2
Repetitive Avalanche Energy
Avalanche Current
Note1
Total Power Dissipation
Junction and Storage Temperature Range
Junction-to-Case
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Zero Gate Voltage Drain Current
符号
Symbol
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward On Voltage
VGS=0V
VDS=160V
μA
TC=125℃
100
μA
VGS=±20V
VDS=0V
±0.1
μA
VGS(th)
VDS=VGS
ID=250μA
4.0
V
RDS(on)
VGS=10V
ID=10.8A
0.18
Ω
VSD
VGS=0V
IS=10.8A
1.5
V
VDS=25V
f=1.0MHz
VGS=0V
IGSS
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
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VDS=200V
最小值 典型值 最大值 单位
Min
Typ
Max
Unit
200
V
1
Input Capacitance
Turn-Off Fall Time
测试条件
Test Conditions
VGS=0V
ID=250μA
tf
VDD=100V
RG=10Ω
ID=18A
VGS=10V
2.0
0.14
1685
pF
121
pF
6.4
pF
24.5
ns
24
ns
49.6
ns
11.2
ns
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BRD640
Rev.D May.-2016
电性能参数
DATA SHEET
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Total Gate Charge
符号
Symbol
Qg
Gate to Source Charge
Qgs
Gate to Drain (“Miller”)Charge
Continuous Source Current
(Body Diode)
Maximum Pulsed Current (Body
Diode)
Qgd
测试条件
Test Conditions
ID=18A
VG =10V
VDD =160V
最小值 典型值 最大值 单位
Min
Typ
Max
Unit
31
nC
8.69
nC
8.59
nC
IS
18
A
ISM
72
A
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Tj = 25°C
IS=18A
dIF/dt=100A/us
VGS=0V
208
ns
0.79
nC
Note:
Pulse width tp≤300μs,δ≤2%
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BRD640
Rev.D May.-2016
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
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BRD640
Rev.D May.-2016
测试电路与波形图
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DATA SHEET
/ Test Circuit and Waveform Curve
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BRD640
Rev.D May.-2016
测试电路与波形图
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DATA SHEET
/ Test Circuit and Waveform Curve
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BRD640
Rev.D May.-2016
外形尺寸图
DATA SHEET
/ Package Dimensions
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BRD640
Rev.D May.-2016
印章说明
/
DATA SHEET
Marking Instructions
BR
640
****

说明:
BR: 

为公司代码
640:

为型号代码
****:

为生产批号代码,随生产批号变化。

Company Code
Note:
BR:  
640:
****:
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Product Type.

Lot No. Code, code change with Lot No.
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BRD640
Rev.D May.-2016
DATA SHEET
波峰焊温度曲线图(无铅)
/
Temperature Profile for Dip Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 245±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:245±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:260±5℃
包装规格
Package Type
封装形式
TO-252
套管包装
Package Type
封装形式
使用说明
Temp.:260±5℃
Time:10±1 sec
/ Packaging SPEC.
卷盘包装
TO-251/252
时间:10±1 sec.
/ REEL
Units 包装数量
Dimension
Units/Reel
只/卷盘
Reels/Inner Box
卷盘/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
2,500
2
5,000
5
25,000
包装尺寸
3
(unit:mm )
Reel
Inner Box 盒
Outer Box 箱
13〞×16
360×360×50
385×257×392
/ TUBE
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Units/Tube
只/套管
Tubes/Inner Box
套管/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Tube 套管
Inner Box 盒
Outer Box 箱
75
48
3,600
5
18,000
526×20.5×5.25
555×164×50
575×290×180
/ Notices
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