ACE ACE7438M N-channel 30-v mosfet Datasheet

ACE7438M
N-Channel 30-V MOSFET
Description
The ACE7438M uses advanced trench technology to provide excellent RDS(ON), low gate charge. This
device is suitable for use as a high side switch in SMPS and general purpose applications.
Features
•
•
•
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications
•
•
•
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Symbol
Limit
Units
Drain-Source Voltage
VDS
-30
V
VGS
±20
V
Gate-Source Voltage
O
TA=25 C
Continuous Drain Current a
TA=70 C
Pulse Drain Current
b
Continuous Drain Current (Diode Continuous)
22
ID
O
a
IDM
80
IS
5.1
O
Power Dissipation a
TA=25 C
TA=70 C
A
5
PD
O
A
18
W
3.2
Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150
Parameter
Maximum Junction-to-Ambient a
O
C
Symbol Maximum Units
t≦10sec
Steady State
RθJA
25
℃/W
65
℃/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1
1
ACE7438M
N-Channel 30-V MOSFET
Packaging Type
DFN5*6-8L
Ordering information
ACE7438M PN + H
Halogen - free
Pb - free
PN : DFN5*6-8L
VER 1.1
2
ACE7438M
N-Channel 30-V MOSFET
Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
1
Typ.
Max.
Unit
Static
Gate Source Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA
Gate Body Leakage
IGSS
VDS=0V, VGS=±20V
±100
Zero Gate Voltage Drain Current
IDSS
VDS=24V, VGS=0V
1
VDS=24V, VGS=0V, TJ=55℃
25
On-State Drain-Current a
ID(on)
Static Drain-Source On-Resistance a
rDS(ON)
Forward Transconductance a
gfS
VGS=15V,ID=15.2 A
30
S
VSD
IS= 2.6 A ,VGS=0V
0.72
V
Diode Forward Voltage
a
VDS=5V, VGS=10V
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tf
Turn-Off Delay Time
td(off)
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
40
nA
uA
A
VGS=10V,ID=15.2 A
7.5
VGS= 4.5 V,ID= 14.4 A
11.5
Dynamic
Total Gate Charge
V
mΩ
b
VDS=15V,VGS=4.5V ,
ID=15.2A
21
nC
8.0
9.2
4
VDS=15V, ,RL=1Ω
ID=15.2A,VGEN=10V
RGEN=6Ω,
58
ns
54
31
VDS=15V, VGS=0V
f=1MHz
1835
315
pF
303
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
VER 1.1
3
ACE7438M
N-Channel 30-V MOSFET
Typical Performance Characteristics
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
VGS - Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
VGS - Gate-to-Source Voltage (V)
2. Transfer Characteristics
VSD - Source-to-Drain Voltage (V)
4. Drain-to-Source Forward Voltage
VDS-Drain-to-Source Voltage (V)
6. Capacitance
VER 1.1
4
ACE7438M
N-Channel 30-V MOSFET
Typical Performance Characteristics
Qg - Total Gate Charge (nC)
7. Gate Charge
VDS Drain to Source Voltage (V)
9. Safe Operating Area
TJ -JunctionTemperature(°C)
8. Normalized On-Resistance Vs
Junction Temperature
t1 TIME (SEC)
10. Single Pulse Maximum Power Dissipation
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
VER 1.1
5
ACE7438M
N-Channel 30-V MOSFET
Packing Information
DFN5*6-8L
SYMBOLS
A
A1
b
c
D
D1
E
E1
E2
e
L
L1
L2
θ
DIMENSIONS IN MILLIMETERS
MIN
NOM
MAX
0.85
0.95
1.00
0.00
0.05
0.30
0.40
0.50
0.15
0.20
0.25
5.20 BSC
4.35 BSC
5.55 BSC
6.05 BSC
3.62 BSC
1.27 BSC
0.45
0.55
0.65
0
0.15
0.68 REF
O
0
10O
DIENSIONS IN INCHES
MIN
NOM
MAX
0.033
0.037
0.039
0.000
0.002
0.012
0.016
0.020
0.006
0.008
0.010
0.205 BSC
0.171 BSC
0.219 BSC
0.238 BSC
0.143 BSC
0.050 BSC
0.018
0.022
0.026
0
0.006
0.027 REF
O
0
10O
VER 1.1
6
ACE7438M
N-Channel 30-V MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
7
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