ON NVATS5A108PLZ Power mosfet Datasheet

NVATS5A108PLZ
Power MOSFET
40 V, 10.4 mΩ, 77 A, P-Channel
Automotive Power MOSFET designed for compact and efficient designs and
including high thermal performance.
AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive
applications.
Features
 Low On-Resistance
 High Current Capability
 100% Avalanche Tested
 AEC-Q101 qualified and PPAP capable
ATPAK package is pin-compatible with DPAK (TO-252﴿
 Pb-Free, Halogen Free and RoHS compliance
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VDSS
RDS(on) Max
10.4 mΩ @ 10 V
40 V
16.5 mΩ @ 4.5 V
2,4
1
1 : Gate
2 : Drain
3 : Source
4 : Drain
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Symbol
VDSS
VGSS
ID
40
20
77
Unit
V
V
A
IDP
231
A
PD
72
W
55 to +175
C
95
35
mJ
A
Operating Junction and
Storage Temperature
Tj, Tstg
Avalanche Energy (Single Pulse) (Note 2)
Avalanche Current (Note 3)
EAS
IAV
Value
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : VDD = 15 V, L = 100 H, IAV = 35 A
3 : L ≤ 100 H, Single pulse
THERMAL RESISTANCE RATINGS
Parameter
77 A
ELECTRICAL CONNECTION
P-Channel
Typical Applications
 Reverse Battery Protection
 Load Switch
 Automotive Front Lighting
 Automotive Body Controllers
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PW  10 s, duty cycle  1%
Power Dissipation
Tc = 25C
ID Max
Symbol
Junction to Case Steady State (Tc = 25C)
RJC
Junction to Ambient (Note 4)
RJA
Value
3
4
1 2
3
ATPAK
MARKING
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
Unit
2.0
C/W
79.6
C/W
2
Note 4 : Surface mounted on FR4 board using a 130 mm , 1 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2016
September 2016 - Rev. 0
1
Publication Order Number :
NVATS5A108PLZ/D
NVATS5A108PLZ
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 5)
Conditions
Value
Parameter
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
IDSS
ID = 1 mA, VGS = 0 V
Zero-Gate Voltage Drain Current
VDS = 40 V, VGS = 0 V
1
A
Gate to Source Leakage Current
IGSS
VGS = 16 V, VDS = 0 V
10
A
Gate Threshold Voltage
VGS(th)
VDS = 10 V, ID = 1 mA
2.6
V
Forward Transconductance
gFS
VDS = 10 V, ID = 35 A
65
Static Drain to Source On-State
Resistance
RDS(on)1
RDS(on)2
ID = 35 A, VGS = 10 V
8
10.4
m
11.5
16.5
m
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
tr
Turn-OFF Delay Time
td(off)
ID = 18 A, VGS = 4.5 V
min
typ
max
40
Unit
V
1.2
S
3,850
pF
560
pF
Crss
390
pF
td(on)
19
ns
340
ns
340
ns
VDS = 20 V, f = 1 MHz
See Fig.1
Fall Time
tf
290
ns
Total Gate Charge
Qg
79.5
nC
Gate to Source Charge
Qgs
20
nC
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
VDS = 20 V, VGS = 10 V, ID = 70 A
15
IS = 70 A, VGS = 0 V
1.05
nC
1.5
V
Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Switching Time Test Circuit
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NVATS5A108PLZ
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NVATS5A108PLZ
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NVATS5A108PLZ
PACKAGE DIMENSIONS
unit : mm
DPAK (Single Gauge) / ATPAK
CASE 369AM
ISSUE O
4
2
3
RECOMMENDED
SOLDERING FOOTPRINT
6.5
1 : Gate
2 : Drain
1.5
2
4 : Drain
6.7
3 : Source
1.6
1
2.3
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5
2.3
NVATS5A108PLZ
ORDERING INFORMATION
Device
NVATS5A108PLZT4G
Marking
Package
Shipping (Qty / Packing)
ATP108
DPAK(Single Gauge) / ATPAK
(Pb-Free / Halogen Free)
3,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the NVATS5A108PLZ is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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