DGNJDZ NJ2N65 2.0a 650v n-channel power mosfet Datasheet

NJ2N65 POWER MOSFET
2.0A 650V N-CHANNEL POWER MOSFET
„
DESCRIPTION
The NJ2N65 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
1
TO-220
1
FEATURES
TO-220F
* RDS(ON) = 5 @VGS = 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
1
TO-251
SYMBOL
1
TO-252
„
ORDERING INFORMATION
Ordering Number
Package
NJ2N65-LI
NJ2N65-BL
NJ2N65F-LI
NJ2N65A-LI
NJ2N65D-TR
NJ2N65D-LI
Note:
Pin Assignment: G: Gate
TO-220
TO-220
TO-220F
TO-251
TO-252
TO-252
D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Box
Bulk
Tube
Tube
Tape Ree
Tube
NJ2N65 POWER MOSFET
„
ABSOLUTE MAXIMUM RATINGS (TC = 25°ɋ, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Avalanche Energy
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220
TO-220F
Power Dissipation
TO-251
TO-252
SYMBOL
VDSS
VGSS
IAR
ID
IDM
EAS
EAR
dv/dt
PD
RATINGS
650
±30
2.0
2.0
8.0
140
4.5
4.5
40
21
UNIT
V
V
A
A
A
mJ
mJ
V/ns
W
W
28
W
Junction Temperature
TJ
+150
°ɋ
Operating Temperature
TOPR
-55 ~ +150
°ɋ
Storage Temperature
TSTG
-55 ~ +150
°ɋ
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 ȍ, Starting TJ = 25°C
4. ISD”2.4A, di/dt”200A/ȝs, VDD ” BVDSS, Starting TJ = 25°C
„
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
TO-220
TO-220F
TO-251
TO-252
șJA
TO-220
TO-220F
Junction to Case
TO-251
TO-252
șJc
RATINGS
62.5
125
UNIT
°ɋ/W
°ɋ/W
110
°ɋ/W
3.13
5.95
°ɋ/W
°ɋ/W
4.53
°ɋ/W
NJ2N65 POWER MOSFET
„
ELECTRICAL CHARACTERISTICS (TJ =25°ɋ, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
MIN TYP MAX UNIT
VGS = 0V, ID = 250ȝA
650
V
VDS = 650V, VGS = 0V
10
ȝA
VGS = 30V, VDS = 0V
100 nA
Forward
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
-100 nA
Breakdown Voltage Temperature Coefficient ːBVDSS/ːTJ ID=250ȝA, Referenced to 25°C
0.4
V/°ɋ
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250ȝA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1A
3.9 5.0
ȍ
DYNAMIC CHARACTERISTICS
270 350 pF
Input Capacitance
CISS
VDS =25V, VGS =0V,
Output Capacitance
COSS
40
50
pF
f =1MHz
Reverse Transfer Capacitance
CRSS
5
7
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
10
30
ns
Turn-On Rise Time
tR
25
60
ns
VDD =325V, ID =2.4A,
RG=25ȍ (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
20
50
ns
Turn-Off Fall Time
tF
25
60
ns
9.0
11
nC
Total Gate Charge
QG
VDS=520V, VGS=10V,
Gate-Source Charge
QGS
1.6
nC
ID=2.4A (Note 1, 2)
Gate-Drain Charge
QGD
4.3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, ISD = 2.0 A
1.4
V
Continuous Drain-Source Current
ISD
2.0
A
Pulsed Drain-Source Current
ISM
8.0
A
180
ns
Reverse Recovery Time
trr
VGS = 0 V, ISD = 2.4A,
di/dt = 100 A/ȝs (Note1)
Reverse Recovery Charge
QRR
0.72
ȝC
Notes: 1. Pulse Test: Pulse width ” 300ȝs, Duty cycle”2%
2. Essentially independent of operating temperature
NJ2N65 POWER MOSFET
„
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
Same Type
as D.U.T.
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
NJ2N65 POWER MOSFET
„
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
ġġġġġġġġġġġġġ
NJ2N65 POWER MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Gate Threshold Voltage
300
200
150
100
250
Drain Current, ID (μA)
250
200
150
100
50
50
0
0
0
300
0
150
450
600 750
Drain-Source Breakdown Voltage, BVDSS (V)
0.6
1.2
1.8 2.4 3.0 3.6
Gate Threshold Voltage, VTH (V)
Drain Current, ID (A)
Drain Current, ID (μA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current, ID (A)
„
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