Infineon IDW32G65C5B 650v sic schottky diode Datasheet

SiC
Silicon Carbide Diode
5 t h Ge ner ation thin Q! T M
650V SiC Schottky Diode
IDW32G65C5B
Final Da ta sheet
Rev. 2.0, 2015-04-13
Po wer Ma nage m ent & M ulti m ark et
5th Generation thinQ!™ SiC Schottky Diode
IDW32G65C5B
Description
1
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency
over all load conditions, resulting from both the improved thermal characteristics
and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
1
2
3
Features









Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
1)
Qualified according to JEDEC for target applications
2) 3)
Breakdown voltage tested at 35 mA
Optimized for high temperature operation
Benefits





System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications




Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
Table 1
Key Performance Parameters
Parameter
Value
Unit
VDC
650
V
QC; VR=400V
2 x 23
nC
EC; VR=400V
2 x 5.4
µJ
IF @ TC < 120°C
2 x 16
A
Table 2
Pin 1
A
4)
Pin Definition
Pin 2
Pin 3
C
A
Type / ordering Code
IDW32G65C5B
Package
PG-TO247-3
Marking
D3265B5
1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions for a time periode of 10ms
3)
Per Leg
4)
Per Device
Final Datasheet
2
Related links
www.infineon.com/sic
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW32G65C5B
Table of contents
Table of Contents
1
Description .......................................................................................................................................... 2
2
Maximum ratings ................................................................................................................................ 4
3
Thermal characteristics ..................................................................................................................... 4
4
Electrical characteristics ................................................................................................................... 5
5
Electrical characteristics diagrams .................................................................................................. 6
6
Simplified Forward Characteristics Model ...................................................................................... 8
7
Package outlines ................................................................................................................................ 9
8
Revision History ............................................................................................................................... 10
Final Datasheet
3
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW32G65C5B
Maximum ratings
Maximum ratings
2
Table 3
Parameter
Maximum ratings
Symbol
Continuous forward current
1)
IF
Surge non-repetitive forward current, sine IF,SM
1)
halfwave
Non-repetitive peak forward current
i²t value
1)
1)
Values
Unit
Min.
Typ.
–
–
Max.
16
–
–
95
–
–
74
IF,max
–
–
637
∫ i²dt
–
–
45
–
–
Note/Test Condition
TC < 120°C, D=1
A
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
TC = 25°C, tp=10 µs
A²s
TC = 25°C, tp=10 ms
Repetitive peak reverse voltage
VRRM
–
–
28
650
V
Tj = 25°C
Diode dv/dt ruggedness
dv/dt
–
–
100
V/ns
VR=0..480 V
Ptot
–
–
188
W
TC = 25°C
-55
–
175
°C
50
70
Ncm
Power dissipation
2)
Tj;Tstg
Operating and storage temperature
–
Mounting torque
TC = 150°C, tp=10 ms
M3 screws
Thermal characteristics
3
Table 4
Parameter
Thermal characteristics TO-247-3
Symbol
Values
Min.
Thermal resistance, junction-case
1)
Thermal resistance, junction-ambient
RthJC
1)
Soldering temperature, wavesoldering
only allowed at leads
1)
Per Leg
2)
Per Device
Final Datasheet
RthJA
Tsold
Unit
–
Typ.
1.2
Max.
1.6
–
–
62
–
–
260
4
Note/Test Condition
K/W
leaded
°C
1.6mm (0.063 in.) from
case for 10 s
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW32G65C5B
Electrical characteristics
Electrical characteristics
Table 5
Parameter
Static characteristics
Symbol
DC blocking voltage
1)
Diode forward voltage
Reverse current
Table 6
Parameter
1)
1)
Per Leg
Per Device
Final Datasheet
Note/Test Condition
VDC
Max.
–
VF
–
1.5
1.7
–
1.8
2.1
IF= 16 A, Tj=150°C
–
0.8
200
VR=650 V, Tj=25°C
–
0.2
71
–
3.2
1400
Tj=25°C
V
µA
IF= 16 A, Tj=25°C
VR=600 V, Tj=25°C
VR=650 V, Tj=150°C
AC characteristics
Total Capacitance
2)
Unit
Typ.
–
IR
Symbol
Total capacitive charge
1)
Values
Min.
650
1)
1)
Values
Unit
Min.
Typ.
Qc
–
23
C
–
470
–
–
61
–
–
60
–
5
Note/Test Condition
Max.
nC
VR=400 V, di/dt=200A/µs,
IF≤IF,MAX, Tj=150°C
VR=1 V, f=1 MHz
pF
VR=300 V, f=1 MHz
VR=600 V, f=1 MHz
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW32G65C5B
Electrical characteristics diagrams
Electrical characteristics diagrams
4
Table 7
Power dissipation
1)
Maximal diode forward current
1)
120
100
0.1
0.3
90
100
0.5
80
0.7
1
80
60
IF[A]
Ptot[W]
70
50
60
40
40
30
20
20
10
0
0
25
50
75
100
125
150
25
175
50
75
100
125
150
175
TC[°C]
TC[°C]
IF=f(TC); RthJC,max;Tj≤175°C; parameter D=duty cycle
Ptot=f(TC); RthJC,max
Table 8
Typical forward characteristics
1)
Typical forward characteristics in surge current
35
1)
160
-55°C
140
30
25°C
120
25
100°C
-55°C
100
IF [A]
IF [A]
20
15
10
25°C
80
100°C
150°C
60
175°C
40
150°C
5
20
175°C
0
0
0
1
2
0
3
VF [V]
IF=f(VF); tp=200 µs; parameter: Tj
1)
Per Leg
2)
Per Device
Final Datasheet
1
2
3
VF [V]
4
5
6
IF=f(VF); tp=200 µs; parameter: Tj
6
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW32G65C5B
Electrical characteristics diagrams
Table 9
Typ. capacitance charge vs. current slope
1)
Typ. Reverse current vs. reverse voltage
1)
1.E-5
25
20
1.E-6
IR [A]
QC[nC]
15
175°C
1.E-7
10
150°C
1.E-8
5
100°C
25°C
0
100
300
500
700
1.E-9
100
900
200
300
400
-55°C
500
600
VR [V]
dIF/dt [A/µs]
QC=f(diF/dt); Tj=150°C; VR=400 V; IF≤IF,max
IR=f(VR); parameter: Tj
Table 10
Max. transient thermal impedance
1)
Typ. capacitance vs. reverse voltage
1)
600
500
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.1
0.01
1.E-06
C [pF]
Zth,jc [K/W]
400
200
100
0
1.E-03
1.E+00
0
Zth,jc=f(tP); parameter: D=tP/T
Per Leg
2)
Per Device
Final Datasheet
1
10
100
1000
VR [V]
tp [s]
1)
300
C=f(VR); Tj=25°C; f=1 MHz
7
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW32G65C5B
Electrical characteristics diagrams
Table 11
Typ. capacitance stored energy
1)
16
14
12
EC [µJ]
10
8
6
4
2
0
0
200
400
600
VR [V]
EC=f(VR)
Simplified Forward Characteristics Model
5
Table 12
Equivalent forward current curve
1)
Mathematical Equation
VF  VTH  RDIFF  I F
VTH T j   0.001  T j  1.04 V
RDIFF T j   8  10- 7  T j  8  10- 5  T j  0.029 
IF [A]
2
1/Rdiff
Vth
VF [V]
VF=f(IF)
1)
Per Leg
2)
Per Device
Final Datasheet
Tj in °C; -55°C < Tj < 175°C; IF < 32 A
8
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW32G65C5B
Package outlines
6
Figure 1
1)
Per Leg
2)
Per Device
Final Datasheet
Outlines TO-247, dimensions in mm/inches
9
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW32G65C5B
Revision History
7
Revision History
th
TM
5 Generation thinQ!
SiC Schottky Diode
Revision History: 2015-04-13, Rev.2.0
Previous Revision:
Revision
Subjects (major changes since last version)
2.0
Release of the final datasheet.
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Edition 2015-04-13
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
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Final Datasheet
10
Rev. 2.0, 2015-04-13
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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